Influence of strain, surface diffusion and Ostwald ripening on the evolution of nanostructures for erbium on Si(001)

Lena Fitting, M. C. Zeman, W. C. Yang, R. J. Nemanich

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

Influence of strain, surface diffusion and Ostwald ripening on the evolution of nanostructures for erbium on Si(001) was discussed. Ultraviolet photoelectron emission microscopy was employed to study the real time growth process of individual erbium silicide nanostructures on Si(001) surfaces at temperatures up to 1050 °C. A temperature regime was indicated by the results obtained where island growth is mainly governed by surface diffusion of the deposited Er adatoms and a higher temperature regime where Ostwald ripening contributes to the island morphology.

Original languageEnglish (US)
Pages (from-to)4180-4184
Number of pages5
JournalJournal of Applied Physics
Volume93
Issue number7
DOIs
StatePublished - Apr 1 2003
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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