Influence of stacking faults on the properties of GaN-based UV light-emitting diodes grown on non-polar substrates

C. Q. Chen, V. Adivarahan, M. Shatalov, M. E. Gaevski, E. Kuokstis, J. W. Yang, H. P. Maruska, Z. Gong, M. Asif Khan, R. Liu, A. Bell, Fernando Ponce

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Scopus citations

Abstract

We report on the reduction of defect densities in non-polar a-plane GaN films over r-plane sapphire achieved by epitaxial laterally overgrowth (ELOG) approach. A mask pattern was used to produce ELOG GaN with wing region width of about 30μm. Based on transmission electron microscopy (TEM) results, the window regions have stacking faults density of ∼10 6cm -1 and threading dislocation density of ∼10 10cm -2. Both ELOG Ga-face and N-face wing regions have stacking fault density of ∼10 5 cm -1, and dislocation density less than 10 8 cm -2. Cathodoluminescence studies reveal the difference in defect densities between N-faced and Ga-faced wings. GaN-based UV light-emitting diode formed on Ga-faced wing shows stronger quantum well emission and weaker parasitic emission than that formed on N-faced wing.

Original languageEnglish (US)
Title of host publicationPhysica Status Solidi C: Conferences
Pages2732-2735
Number of pages4
Volume2
Edition7
DOIs
StatePublished - 2005

ASJC Scopus subject areas

  • Condensed Matter Physics

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