Influence of stacking faults on the properties of GaN-based UV light-emitting diodes grown on non-polar substrates

C. Q. Chen, V. Adivarahan, M. Shatalov, M. E. Gaevski, E. Kuokstis, J. W. Yang, H. P. Maruska, Z. Gong, M. Asif Khan, R. Liu, A. Bell, Fernando Ponce

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

We report on the reduction of defect densities in non-polar a-plane GaN films over r-plane sapphire achieved by epitaxial laterally overgrowth (ELOG) approach. A mask pattern was used to produce ELOG GaN with wing region width of about 30μm. Based on transmission electron microscopy (TEM) results, the window regions have stacking faults density of ∼10 6cm -1 and threading dislocation density of ∼10 10cm -2. Both ELOG Ga-face and N-face wing regions have stacking fault density of ∼10 5 cm -1, and dislocation density less than 10 8 cm -2. Cathodoluminescence studies reveal the difference in defect densities between N-faced and Ga-faced wings. GaN-based UV light-emitting diode formed on Ga-faced wing shows stronger quantum well emission and weaker parasitic emission than that formed on N-faced wing.

Original languageEnglish (US)
Title of host publicationPhysica Status Solidi C: Conferences
Pages2732-2735
Number of pages4
Volume2
Edition7
DOIs
StatePublished - 2005

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crystal defects
light emitting diodes
wings
defects
cathodoluminescence
sapphire
masks
quantum wells
transmission electron microscopy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Chen, C. Q., Adivarahan, V., Shatalov, M., Gaevski, M. E., Kuokstis, E., Yang, J. W., ... Ponce, F. (2005). Influence of stacking faults on the properties of GaN-based UV light-emitting diodes grown on non-polar substrates. In Physica Status Solidi C: Conferences (7 ed., Vol. 2, pp. 2732-2735) https://doi.org/10.1002/pssc.200461547

Influence of stacking faults on the properties of GaN-based UV light-emitting diodes grown on non-polar substrates. / Chen, C. Q.; Adivarahan, V.; Shatalov, M.; Gaevski, M. E.; Kuokstis, E.; Yang, J. W.; Maruska, H. P.; Gong, Z.; Khan, M. Asif; Liu, R.; Bell, A.; Ponce, Fernando.

Physica Status Solidi C: Conferences. Vol. 2 7. ed. 2005. p. 2732-2735.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chen, CQ, Adivarahan, V, Shatalov, M, Gaevski, ME, Kuokstis, E, Yang, JW, Maruska, HP, Gong, Z, Khan, MA, Liu, R, Bell, A & Ponce, F 2005, Influence of stacking faults on the properties of GaN-based UV light-emitting diodes grown on non-polar substrates. in Physica Status Solidi C: Conferences. 7 edn, vol. 2, pp. 2732-2735. https://doi.org/10.1002/pssc.200461547
Chen CQ, Adivarahan V, Shatalov M, Gaevski ME, Kuokstis E, Yang JW et al. Influence of stacking faults on the properties of GaN-based UV light-emitting diodes grown on non-polar substrates. In Physica Status Solidi C: Conferences. 7 ed. Vol. 2. 2005. p. 2732-2735 https://doi.org/10.1002/pssc.200461547
Chen, C. Q. ; Adivarahan, V. ; Shatalov, M. ; Gaevski, M. E. ; Kuokstis, E. ; Yang, J. W. ; Maruska, H. P. ; Gong, Z. ; Khan, M. Asif ; Liu, R. ; Bell, A. ; Ponce, Fernando. / Influence of stacking faults on the properties of GaN-based UV light-emitting diodes grown on non-polar substrates. Physica Status Solidi C: Conferences. Vol. 2 7. ed. 2005. pp. 2732-2735
@inproceedings{de8bd216e79a41368b6e009572dc0b17,
title = "Influence of stacking faults on the properties of GaN-based UV light-emitting diodes grown on non-polar substrates",
abstract = "We report on the reduction of defect densities in non-polar a-plane GaN films over r-plane sapphire achieved by epitaxial laterally overgrowth (ELOG) approach. A mask pattern was used to produce ELOG GaN with wing region width of about 30μm. Based on transmission electron microscopy (TEM) results, the window regions have stacking faults density of ∼10 6cm -1 and threading dislocation density of ∼10 10cm -2. Both ELOG Ga-face and N-face wing regions have stacking fault density of ∼10 5 cm -1, and dislocation density less than 10 8 cm -2. Cathodoluminescence studies reveal the difference in defect densities between N-faced and Ga-faced wings. GaN-based UV light-emitting diode formed on Ga-faced wing shows stronger quantum well emission and weaker parasitic emission than that formed on N-faced wing.",
author = "Chen, {C. Q.} and V. Adivarahan and M. Shatalov and Gaevski, {M. E.} and E. Kuokstis and Yang, {J. W.} and Maruska, {H. P.} and Z. Gong and Khan, {M. Asif} and R. Liu and A. Bell and Fernando Ponce",
year = "2005",
doi = "10.1002/pssc.200461547",
language = "English (US)",
volume = "2",
pages = "2732--2735",
booktitle = "Physica Status Solidi C: Conferences",
edition = "7",

}

TY - GEN

T1 - Influence of stacking faults on the properties of GaN-based UV light-emitting diodes grown on non-polar substrates

AU - Chen, C. Q.

AU - Adivarahan, V.

AU - Shatalov, M.

AU - Gaevski, M. E.

AU - Kuokstis, E.

AU - Yang, J. W.

AU - Maruska, H. P.

AU - Gong, Z.

AU - Khan, M. Asif

AU - Liu, R.

AU - Bell, A.

AU - Ponce, Fernando

PY - 2005

Y1 - 2005

N2 - We report on the reduction of defect densities in non-polar a-plane GaN films over r-plane sapphire achieved by epitaxial laterally overgrowth (ELOG) approach. A mask pattern was used to produce ELOG GaN with wing region width of about 30μm. Based on transmission electron microscopy (TEM) results, the window regions have stacking faults density of ∼10 6cm -1 and threading dislocation density of ∼10 10cm -2. Both ELOG Ga-face and N-face wing regions have stacking fault density of ∼10 5 cm -1, and dislocation density less than 10 8 cm -2. Cathodoluminescence studies reveal the difference in defect densities between N-faced and Ga-faced wings. GaN-based UV light-emitting diode formed on Ga-faced wing shows stronger quantum well emission and weaker parasitic emission than that formed on N-faced wing.

AB - We report on the reduction of defect densities in non-polar a-plane GaN films over r-plane sapphire achieved by epitaxial laterally overgrowth (ELOG) approach. A mask pattern was used to produce ELOG GaN with wing region width of about 30μm. Based on transmission electron microscopy (TEM) results, the window regions have stacking faults density of ∼10 6cm -1 and threading dislocation density of ∼10 10cm -2. Both ELOG Ga-face and N-face wing regions have stacking fault density of ∼10 5 cm -1, and dislocation density less than 10 8 cm -2. Cathodoluminescence studies reveal the difference in defect densities between N-faced and Ga-faced wings. GaN-based UV light-emitting diode formed on Ga-faced wing shows stronger quantum well emission and weaker parasitic emission than that formed on N-faced wing.

UR - http://www.scopus.com/inward/record.url?scp=27344441813&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27344441813&partnerID=8YFLogxK

U2 - 10.1002/pssc.200461547

DO - 10.1002/pssc.200461547

M3 - Conference contribution

AN - SCOPUS:27344441813

VL - 2

SP - 2732

EP - 2735

BT - Physica Status Solidi C: Conferences

ER -