Influence of stacking faults on the properties of GaN-based UV light-emitting diodes grown on non-polar substrates

C. Q. Chen; V. Adivarahan; M. Shatalov; M. E. Gaevski; E. Kuokstis; J. W. Yang; H. P. Maruska; Z. Gong; M. Asif Khan; R. Liu; A. Bell; Fernando Ponce

doi:10.1002/pssc.200461547

Influence of stacking faults on the properties of GaN-based UV light-emitting diodes grown on non-polar substrates

C. Q. Chen, V. Adivarahan, M. Shatalov, M. E. Gaevski, E. Kuokstis, J. W. Yang, H. P. Maruska, Z. Gong, M. Asif Khan, R. Liu, A. Bell, Fernando Ponce

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

12 Scopus citations

Abstract

We report on the reduction of defect densities in non-polar a-plane GaN films over r-plane sapphire achieved by epitaxial laterally overgrowth (ELOG) approach. A mask pattern was used to produce ELOG GaN with wing region width of about 30μm. Based on transmission electron microscopy (TEM) results, the window regions have stacking faults density of ∼10 ⁶cm ^-1 and threading dislocation density of ∼10 ¹⁰cm ^-2. Both ELOG Ga-face and N-face wing regions have stacking fault density of ∼10 ⁵ cm ^-1, and dislocation density less than 10 ⁸ cm ^-2. Cathodoluminescence studies reveal the difference in defect densities between N-faced and Ga-faced wings. GaN-based UV light-emitting diode formed on Ga-faced wing shows stronger quantum well emission and weaker parasitic emission than that formed on N-faced wing.

Original language	English (US)
Title of host publication	Physica Status Solidi C: Conferences
Pages	2732-2735
Number of pages	4
Volume	2
Edition	7
DOIs	https://doi.org/10.1002/pssc.200461547
State	Published - 2005

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Condensed Matter Physics

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Chen, C. Q., Adivarahan, V., Shatalov, M., Gaevski, M. E., Kuokstis, E., Yang, J. W., Maruska, H. P., Gong, Z., Khan, M. A., Liu, R., Bell, A., & Ponce, F. (2005). Influence of stacking faults on the properties of GaN-based UV light-emitting diodes grown on non-polar substrates. In Physica Status Solidi C: Conferences (7 ed., Vol. 2, pp. 2732-2735) https://doi.org/10.1002/pssc.200461547

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title = "Influence of stacking faults on the properties of GaN-based UV light-emitting diodes grown on non-polar substrates",

abstract = "We report on the reduction of defect densities in non-polar a-plane GaN films over r-plane sapphire achieved by epitaxial laterally overgrowth (ELOG) approach. A mask pattern was used to produce ELOG GaN with wing region width of about 30μm. Based on transmission electron microscopy (TEM) results, the window regions have stacking faults density of ∼10 6cm -1 and threading dislocation density of ∼10 10cm -2. Both ELOG Ga-face and N-face wing regions have stacking fault density of ∼10 5 cm -1, and dislocation density less than 10 8 cm -2. Cathodoluminescence studies reveal the difference in defect densities between N-faced and Ga-faced wings. GaN-based UV light-emitting diode formed on Ga-faced wing shows stronger quantum well emission and weaker parasitic emission than that formed on N-faced wing.",

author = "Chen, {C. Q.} and V. Adivarahan and M. Shatalov and Gaevski, {M. E.} and E. Kuokstis and Yang, {J. W.} and Maruska, {H. P.} and Z. Gong and Khan, {M. Asif} and R. Liu and A. Bell and Fernando Ponce",

year = "2005",

doi = "10.1002/pssc.200461547",

language = "English (US)",

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pages = "2732--2735",

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T1 - Influence of stacking faults on the properties of GaN-based UV light-emitting diodes grown on non-polar substrates

AU - Chen, C. Q.

AU - Adivarahan, V.

AU - Shatalov, M.

AU - Gaevski, M. E.

AU - Kuokstis, E.

AU - Yang, J. W.

AU - Maruska, H. P.

AU - Gong, Z.

AU - Khan, M. Asif

AU - Liu, R.

AU - Bell, A.

AU - Ponce, Fernando

PY - 2005

Y1 - 2005

N2 - We report on the reduction of defect densities in non-polar a-plane GaN films over r-plane sapphire achieved by epitaxial laterally overgrowth (ELOG) approach. A mask pattern was used to produce ELOG GaN with wing region width of about 30μm. Based on transmission electron microscopy (TEM) results, the window regions have stacking faults density of ∼10 6cm -1 and threading dislocation density of ∼10 10cm -2. Both ELOG Ga-face and N-face wing regions have stacking fault density of ∼10 5 cm -1, and dislocation density less than 10 8 cm -2. Cathodoluminescence studies reveal the difference in defect densities between N-faced and Ga-faced wings. GaN-based UV light-emitting diode formed on Ga-faced wing shows stronger quantum well emission and weaker parasitic emission than that formed on N-faced wing.

AB - We report on the reduction of defect densities in non-polar a-plane GaN films over r-plane sapphire achieved by epitaxial laterally overgrowth (ELOG) approach. A mask pattern was used to produce ELOG GaN with wing region width of about 30μm. Based on transmission electron microscopy (TEM) results, the window regions have stacking faults density of ∼10 6cm -1 and threading dislocation density of ∼10 10cm -2. Both ELOG Ga-face and N-face wing regions have stacking fault density of ∼10 5 cm -1, and dislocation density less than 10 8 cm -2. Cathodoluminescence studies reveal the difference in defect densities between N-faced and Ga-faced wings. GaN-based UV light-emitting diode formed on Ga-faced wing shows stronger quantum well emission and weaker parasitic emission than that formed on N-faced wing.

UR - http://www.scopus.com/inward/record.url?scp=27344441813&partnerID=8YFLogxK

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U2 - 10.1002/pssc.200461547

DO - 10.1002/pssc.200461547

M3 - Conference contribution

AN - SCOPUS:27344441813

VL - 2

SP - 2732

EP - 2735

BT - Physica Status Solidi C: Conferences

ER -

Influence of stacking faults on the properties of GaN-based UV light-emitting diodes grown on non-polar substrates

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