Abstract

One of the major concerns in the operation of GaN HEMT devices is its thermal performance. Under high power operating conditions, current collapse has been observed in several experimental studies. In the present work, the effect of shielding the GaN HEMT structure on the thermal characteristics and the gate-edge electric field of the structure is being investigated. An electro-thermal device simulator that couples the Monte Carlo transport kernel, the Poisson kernel and a thermal solver has been developed at Arizona State University to model the physics behind the operation of this device.

Original languageEnglish (US)
Title of host publicationInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages237-240
Number of pages4
ISBN (Electronic)9780615717562
StatePublished - 2012
Event2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 - Denver, United States
Duration: Sep 5 2012Sep 7 2012

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012
CountryUnited States
CityDenver
Period9/5/129/7/12

Keywords

  • Current collapse
  • Field-plate
  • GaN HEMTs
  • Self-heating
  • Shielding

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modeling and Simulation

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  • Cite this

    Padmanabhan, B., Vasileska, D., & Goodnick, S. M. (2012). Influence of shielding on the thermal characteristics of GaN HEMTs. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings (pp. 237-240). (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). Institute of Electrical and Electronics Engineers Inc..