Influence of reaction conditions on the growth of GaN rods in an ammono-CVD reactor

Gregorio Guadalupe Carbajal Arzaga, Gerardo Soto Herrera, Alec M. Fischer, Oscar Edel Contreras Lpez

Research output: Contribution to journalArticlepeer-review

Abstract

GaN was deposited onto a sapphire substrate covered by gold film to favor formation of rods in a chemical vapor deposition reactor. Sublimation of NH 4Cl was used to transfer gallium to the vapor phase and it was then reacted with NH3. A factorial design experiment was used to study three parameters: substrate temperature, ammonia flow and temperature applied to NH4Cl. Results showed that the three parameters interact with each other with respect to the lateral growth of GaN, e.g. the rise in substrate temperature can either increase or reduce the lateral growth depending on the NH4Cl treatment temperature. Similarly, the catalytic effect of gold on GaN rods depends on the three studied parameters. These interactions cannot be observed in univariate experiments. Optimal conditions to produce GaN rods were a substrate temperature of 800 °C, ammonia flow of 180 sccm and 300 °C applied to NH4Cl. The V/III ratio was a dominant factor in lateral growth, and this is controlled simultaneously with the three parameters studied.

Original languageEnglish (US)
Pages (from-to)19-24
Number of pages6
JournalJournal of Crystal Growth
Volume319
Issue number1
DOIs
StatePublished - Mar 15 2011
Externally publishedYes

Keywords

  • A1. Crystal morphology
  • A1. Nanostructures
  • A3. Chemical vapor deposition processes
  • B2. Semiconducting IIIV materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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