TY - JOUR
T1 - Influence of reaction conditions on the growth of GaN rods in an ammono-CVD reactor
AU - Arzaga, Gregorio Guadalupe Carbajal
AU - Soto Herrera, Gerardo
AU - Fischer, Alec M.
AU - Contreras Lpez, Oscar Edel
N1 - Funding Information:
Technical assistance of E. Aparicio, I. Gradilla, F. Ruiz, E. Flores, D. Dominguez and M.I.P. Montfort is acknowledged. Financial support was provided by PAPIIT-UNAM Project IN101509 and CONACYT Project 82984 . G.G.C.A. acknowledges the fellowship granted by DGAPA-UNAM to accomplish the present work.
PY - 2011/3/15
Y1 - 2011/3/15
N2 - GaN was deposited onto a sapphire substrate covered by gold film to favor formation of rods in a chemical vapor deposition reactor. Sublimation of NH 4Cl was used to transfer gallium to the vapor phase and it was then reacted with NH3. A factorial design experiment was used to study three parameters: substrate temperature, ammonia flow and temperature applied to NH4Cl. Results showed that the three parameters interact with each other with respect to the lateral growth of GaN, e.g. the rise in substrate temperature can either increase or reduce the lateral growth depending on the NH4Cl treatment temperature. Similarly, the catalytic effect of gold on GaN rods depends on the three studied parameters. These interactions cannot be observed in univariate experiments. Optimal conditions to produce GaN rods were a substrate temperature of 800 °C, ammonia flow of 180 sccm and 300 °C applied to NH4Cl. The V/III ratio was a dominant factor in lateral growth, and this is controlled simultaneously with the three parameters studied.
AB - GaN was deposited onto a sapphire substrate covered by gold film to favor formation of rods in a chemical vapor deposition reactor. Sublimation of NH 4Cl was used to transfer gallium to the vapor phase and it was then reacted with NH3. A factorial design experiment was used to study three parameters: substrate temperature, ammonia flow and temperature applied to NH4Cl. Results showed that the three parameters interact with each other with respect to the lateral growth of GaN, e.g. the rise in substrate temperature can either increase or reduce the lateral growth depending on the NH4Cl treatment temperature. Similarly, the catalytic effect of gold on GaN rods depends on the three studied parameters. These interactions cannot be observed in univariate experiments. Optimal conditions to produce GaN rods were a substrate temperature of 800 °C, ammonia flow of 180 sccm and 300 °C applied to NH4Cl. The V/III ratio was a dominant factor in lateral growth, and this is controlled simultaneously with the three parameters studied.
KW - A1. Crystal morphology
KW - A1. Nanostructures
KW - A3. Chemical vapor deposition processes
KW - B2. Semiconducting IIIV materials
UR - http://www.scopus.com/inward/record.url?scp=79952623298&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79952623298&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2011.01.103
DO - 10.1016/j.jcrysgro.2011.01.103
M3 - Article
AN - SCOPUS:79952623298
SN - 0022-0248
VL - 319
SP - 19
EP - 24
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -