@article{11472278735b49d4884a824bc111215f,
title = "Influence of polarity on carrier transport in semipolar (202{\=1}) and (20{\=2}1) multiple-quantum-well light-emitting diodes",
abstract = "We investigate the influence of polarity on carrier transport in single-quantum-well and multiple-quantum-well (MQW) light-emitting diodes (LEDs) grown on the semipolar (20{\=2}1) and (202{\=1}) orientations of free-standing GaN. For semipolar MQW LEDs with the opposite polarity to conventional Ga-polar c-plane LEDs, the polarization-related electric field in the QWs results in an additional energy barrier for carriers to escape the QWs. We show that semipolar (202{\=1}) MQW LEDs with the same polarity to Ga-polar c-plane LEDs have a more uniform carrier distribution and lower forward voltage than (20{\=2}1) MQW LEDs.",
author = "Yoshinobu Kawaguchi and Huang, {Chia Yen} and Wu, {Yuh Renn} and Qimin Yan and Pan, {Chih Chien} and Yuji Zhao and Shinichi Tanaka and Kenji Fujito and Daniel Feezell and {Van De Walle}, {Chris G.} and Denbaars, {Steven P.} and Shuji Nakamura",
note = "Funding Information: The authors acknowledge the Solid State Lighting and Energy Center at UCSB for funding. A portion of this work was done in the UCSB nanofabrication facility, part of the National Science Foundation (NSF) funded National Nanotechnology Infrastructure Network (NNIN) network. This work made use of the Central Facilities at UCSB supported by the NSF Materials Research Science and Engineering Centers (MRSEC). This work is partially supported by National Science Council in Taiwan under grant NSC-99-2221-E-002-058-MY3.",
year = "2012",
month = jun,
day = "4",
doi = "10.1063/1.4726106",
language = "English (US)",
volume = "100",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "23",
}