Influence of Mg-doped barriers on semipolar (202̄1) multiple-quantum-well green light-emitting diodes

Chia Yen Huang, Qimin Yan, Yuji Zhao, Kenji Fujito, Daniel Feezell, Chris G. Van De Walle, James S. Speck, Steven P. Denbaars, Shuji Nakamura

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

We report the effects of Mg doping in the barriers of semipolar (202̄1) multiple-quantum-well light-emitting diodes (LEDs) with long emission wavelengths (>500 nm). With moderate Mg doping concentrations (3 × 1018-5 × 1018 cm-3) in the barriers, the output power was enhanced compared to those with undoped barriers, which suggests that hole transport in the active region is a limiting factor for device performance. Improved hole injection due to Mg doping in the barriers is demonstrated by dichromatic LED experiments and band diagram simulations. With Mg-doped AlGaN barriers, double-quantum-well LEDs with orange to red emission (λ > 600 nm) were also demonstrated.

Original languageEnglish (US)
Article number141114
JournalApplied Physics Letters
Volume99
Issue number14
DOIs
StatePublished - Oct 3 2011
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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