Influence of Mg-doped barriers on semipolar (202̄1) multiple-quantum-well green light-emitting diodes

Chia Yen Huang; Qimin Yan; Yuji Zhao; Kenji Fujito; Daniel Feezell; Chris G. Van De Walle; James S. Speck; Steven P. Denbaars; Shuji Nakamura

doi:10.1063/1.3647560

Influence of Mg-doped barriers on semipolar (202̄1) multiple-quantum-well green light-emitting diodes

Chia Yen Huang, Qimin Yan, Yuji Zhao, Kenji Fujito, Daniel Feezell, Chris G. Van De Walle, James S. Speck, Steven P. Denbaars, Shuji Nakamura

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

We report the effects of Mg doping in the barriers of semipolar (202̄1) multiple-quantum-well light-emitting diodes (LEDs) with long emission wavelengths (>500 nm). With moderate Mg doping concentrations (3 × 10¹⁸-5 × 10¹⁸ cm^-3) in the barriers, the output power was enhanced compared to those with undoped barriers, which suggests that hole transport in the active region is a limiting factor for device performance. Improved hole injection due to Mg doping in the barriers is demonstrated by dichromatic LED experiments and band diagram simulations. With Mg-doped AlGaN barriers, double-quantum-well LEDs with orange to red emission (λ > 600 nm) were also demonstrated.

Original language	English (US)
Article number	141114
Journal	Applied Physics Letters
Volume	99
Issue number	14
DOIs	https://doi.org/10.1063/1.3647560
State	Published - Oct 3 2011
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3647560

Cite this

@article{990b0b3e23a2477fba03af0309821502,

title = "Influence of Mg-doped barriers on semipolar (20{\=2}1) multiple-quantum-well green light-emitting diodes",

abstract = "We report the effects of Mg doping in the barriers of semipolar (20{\=2}1) multiple-quantum-well light-emitting diodes (LEDs) with long emission wavelengths (>500 nm). With moderate Mg doping concentrations (3 × 1018-5 × 1018 cm-3) in the barriers, the output power was enhanced compared to those with undoped barriers, which suggests that hole transport in the active region is a limiting factor for device performance. Improved hole injection due to Mg doping in the barriers is demonstrated by dichromatic LED experiments and band diagram simulations. With Mg-doped AlGaN barriers, double-quantum-well LEDs with orange to red emission (λ > 600 nm) were also demonstrated.",

author = "Huang, {Chia Yen} and Qimin Yan and Yuji Zhao and Kenji Fujito and Daniel Feezell and {Van De Walle}, {Chris G.} and Speck, {James S.} and Denbaars, {Steven P.} and Shuji Nakamura",

note = "Funding Information: The authors acknowledge the Solid State Lighting and Energy Center at UCSB for funding. A portion of this work was done in the UCSB nanofabrication facility, part of the National Science Foundation (NSF) funded National Nanotechnology Infrastructure Network (NNIN) network. This work made use of the Central Facilities at UCSB supported by the NSF Materials Research Science and Engineering Centers (MRSEC). ",

year = "2011",

month = oct,

day = "3",

doi = "10.1063/1.3647560",

language = "English (US)",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "14",

}

TY - JOUR

T1 - Influence of Mg-doped barriers on semipolar (202̄1) multiple-quantum-well green light-emitting diodes

AU - Huang, Chia Yen

AU - Yan, Qimin

AU - Zhao, Yuji

AU - Fujito, Kenji

AU - Feezell, Daniel

AU - Van De Walle, Chris G.

AU - Speck, James S.

AU - Denbaars, Steven P.

AU - Nakamura, Shuji

N1 - Funding Information: The authors acknowledge the Solid State Lighting and Energy Center at UCSB for funding. A portion of this work was done in the UCSB nanofabrication facility, part of the National Science Foundation (NSF) funded National Nanotechnology Infrastructure Network (NNIN) network. This work made use of the Central Facilities at UCSB supported by the NSF Materials Research Science and Engineering Centers (MRSEC).

PY - 2011/10/3

Y1 - 2011/10/3

N2 - We report the effects of Mg doping in the barriers of semipolar (202̄1) multiple-quantum-well light-emitting diodes (LEDs) with long emission wavelengths (>500 nm). With moderate Mg doping concentrations (3 × 1018-5 × 1018 cm-3) in the barriers, the output power was enhanced compared to those with undoped barriers, which suggests that hole transport in the active region is a limiting factor for device performance. Improved hole injection due to Mg doping in the barriers is demonstrated by dichromatic LED experiments and band diagram simulations. With Mg-doped AlGaN barriers, double-quantum-well LEDs with orange to red emission (λ > 600 nm) were also demonstrated.

AB - We report the effects of Mg doping in the barriers of semipolar (202̄1) multiple-quantum-well light-emitting diodes (LEDs) with long emission wavelengths (>500 nm). With moderate Mg doping concentrations (3 × 1018-5 × 1018 cm-3) in the barriers, the output power was enhanced compared to those with undoped barriers, which suggests that hole transport in the active region is a limiting factor for device performance. Improved hole injection due to Mg doping in the barriers is demonstrated by dichromatic LED experiments and band diagram simulations. With Mg-doped AlGaN barriers, double-quantum-well LEDs with orange to red emission (λ > 600 nm) were also demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=80053954215&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80053954215&partnerID=8YFLogxK

U2 - 10.1063/1.3647560

DO - 10.1063/1.3647560

M3 - Article

AN - SCOPUS:80053954215

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 141114

ER -

Influence of Mg-doped barriers on semipolar (202̄1) multiple-quantum-well green light-emitting diodes

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this