We report the effects of Mg doping in the barriers of semipolar (202̄1) multiple-quantum-well light-emitting diodes (LEDs) with long emission wavelengths (>500 nm). With moderate Mg doping concentrations (3 × 1018-5 × 1018 cm-3) in the barriers, the output power was enhanced compared to those with undoped barriers, which suggests that hole transport in the active region is a limiting factor for device performance. Improved hole injection due to Mg doping in the barriers is demonstrated by dichromatic LED experiments and band diagram simulations. With Mg-doped AlGaN barriers, double-quantum-well LEDs with orange to red emission (λ > 600 nm) were also demonstrated.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - Oct 3 2011|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)