1 Citation (Scopus)

Abstract

Indium tin oxide (TTO) has drawn a great deal of attention due to its potential use as transparent electrodes in organic light emitting diode (OLED) and photovoltaic applications. This work focuses on understanding the role of impurity defects on the electrical conduction and transmittance of ITO. Thin films of ITO with high carrier concentration have been deposited onto polyethylene napthalate (PEN) substrates by electron-beam deposition without introduction of oxygen into the chamber. The influence of air anneals on the electrical and optical properties of ITO/PEN samples can is evaluated in terms of the oxygen content and is explained in terms of changes in the free electron concentrations. Rutherford backscattering spectrometry and X-ray photoelectron spectroscopy analysis were used to determine the oxygen content in the film. A Hall effect measurement is used to determine the dependence of electrical properties on oxygen content. The electrical properties of the ITO films such as carrier concentration, electrical mobility, and resistivity abruptly changes after annealing in the air atmospheres. In addition, optical transmittance is improved from 7 to 71 % and optical band gap changes from 3.18 to 3.25 eV after heat treatment. The optical band gap narrowing behavior is because of impurity band and heavy carrier concentration. Metal impurity clusters form in the films as a result of oxygen deficiency and also generate defects and/or impurity states in the band gap and produces an optical band gap shift by merging of these impurity states and conduction band.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Pages373-378
Number of pages6
Volume1012
StatePublished - 2007
Event2007 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 9 2007Apr 13 2007

Other

Other2007 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/9/074/13/07

Fingerprint

Polyethylene
ITO (semiconductors)
Polyethylenes
polyethylenes
Electric properties
Optical properties
Metals
electrical properties
Impurities
Oxygen
Optical band gaps
optical properties
impurities
Defects
defects
Carrier concentration
Substrates
metals
oxygen
transmittance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Han, H., & Alford, T. (2007). Influence of metal impurity defects on the electrical and optical properties of ITO films on the PEN substrates. In Materials Research Society Symposium Proceedings (Vol. 1012, pp. 373-378)

Influence of metal impurity defects on the electrical and optical properties of ITO films on the PEN substrates. / Han, Hauk; Alford, Terry.

Materials Research Society Symposium Proceedings. Vol. 1012 2007. p. 373-378.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Han, H & Alford, T 2007, Influence of metal impurity defects on the electrical and optical properties of ITO films on the PEN substrates. in Materials Research Society Symposium Proceedings. vol. 1012, pp. 373-378, 2007 MRS Spring Meeting, San Francisco, CA, United States, 4/9/07.
Han H, Alford T. Influence of metal impurity defects on the electrical and optical properties of ITO films on the PEN substrates. In Materials Research Society Symposium Proceedings. Vol. 1012. 2007. p. 373-378
Han, Hauk ; Alford, Terry. / Influence of metal impurity defects on the electrical and optical properties of ITO films on the PEN substrates. Materials Research Society Symposium Proceedings. Vol. 1012 2007. pp. 373-378
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