Influence of K + ions on the interaction of water with silicon dioxide at low temperature relevant to CMP

Scott A. Gold, Veronica Burrows

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Internal reflection infrared spectroscopy was used to examine the effect of potassium ions on the interaction of water with silicon dioxide at low temperature, relevant to chemical mechanical planarization (CMP) of silicon dioxide. Silanol (SiOH) formation was enhanced in silicon dioxide samples exposed to aqueous solutions of potassium chloride and potassium nitrate as compared to those exposed to water, due to a reduction in the thermodynamic activity of the water in potassium salt solutions. However, molecular water was the predominant hydrous species observed in the silicon dioxide. The presence of potassium ions had no significant effect on the effective diffusion coefficient of water in silicon dioxide. Results presented here indicate that the potassium ion concentration, and more specifically the water activity, is a critical factor in the chemical component of the silicon dioxide CMP mechanism.

Original languageEnglish (US)
JournalJournal of the Electrochemical Society
Volume151
Issue number11
DOIs
StatePublished - 2004

Fingerprint

Chemical mechanical polishing
Silicon Dioxide
Potassium
Silica
Ions
silicon dioxide
Water
potassium
water
ions
interactions
Temperature
potassium nitrates
potassium chlorides
Potassium Chloride
ion concentration
nitrates
Infrared spectroscopy
Nitrates
Thermodynamic properties

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Influence of K + ions on the interaction of water with silicon dioxide at low temperature relevant to CMP. / Gold, Scott A.; Burrows, Veronica.

In: Journal of the Electrochemical Society, Vol. 151, No. 11, 2004.

Research output: Contribution to journalArticle

@article{46bc0b39ee8049a69451a9e3b43b35f5,
title = "Influence of K + ions on the interaction of water with silicon dioxide at low temperature relevant to CMP",
abstract = "Internal reflection infrared spectroscopy was used to examine the effect of potassium ions on the interaction of water with silicon dioxide at low temperature, relevant to chemical mechanical planarization (CMP) of silicon dioxide. Silanol (SiOH) formation was enhanced in silicon dioxide samples exposed to aqueous solutions of potassium chloride and potassium nitrate as compared to those exposed to water, due to a reduction in the thermodynamic activity of the water in potassium salt solutions. However, molecular water was the predominant hydrous species observed in the silicon dioxide. The presence of potassium ions had no significant effect on the effective diffusion coefficient of water in silicon dioxide. Results presented here indicate that the potassium ion concentration, and more specifically the water activity, is a critical factor in the chemical component of the silicon dioxide CMP mechanism.",
author = "Gold, {Scott A.} and Veronica Burrows",
year = "2004",
doi = "10.1149/1.1806823",
language = "English (US)",
volume = "151",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "11",

}

TY - JOUR

T1 - Influence of K + ions on the interaction of water with silicon dioxide at low temperature relevant to CMP

AU - Gold, Scott A.

AU - Burrows, Veronica

PY - 2004

Y1 - 2004

N2 - Internal reflection infrared spectroscopy was used to examine the effect of potassium ions on the interaction of water with silicon dioxide at low temperature, relevant to chemical mechanical planarization (CMP) of silicon dioxide. Silanol (SiOH) formation was enhanced in silicon dioxide samples exposed to aqueous solutions of potassium chloride and potassium nitrate as compared to those exposed to water, due to a reduction in the thermodynamic activity of the water in potassium salt solutions. However, molecular water was the predominant hydrous species observed in the silicon dioxide. The presence of potassium ions had no significant effect on the effective diffusion coefficient of water in silicon dioxide. Results presented here indicate that the potassium ion concentration, and more specifically the water activity, is a critical factor in the chemical component of the silicon dioxide CMP mechanism.

AB - Internal reflection infrared spectroscopy was used to examine the effect of potassium ions on the interaction of water with silicon dioxide at low temperature, relevant to chemical mechanical planarization (CMP) of silicon dioxide. Silanol (SiOH) formation was enhanced in silicon dioxide samples exposed to aqueous solutions of potassium chloride and potassium nitrate as compared to those exposed to water, due to a reduction in the thermodynamic activity of the water in potassium salt solutions. However, molecular water was the predominant hydrous species observed in the silicon dioxide. The presence of potassium ions had no significant effect on the effective diffusion coefficient of water in silicon dioxide. Results presented here indicate that the potassium ion concentration, and more specifically the water activity, is a critical factor in the chemical component of the silicon dioxide CMP mechanism.

UR - http://www.scopus.com/inward/record.url?scp=10944265783&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=10944265783&partnerID=8YFLogxK

U2 - 10.1149/1.1806823

DO - 10.1149/1.1806823

M3 - Article

AN - SCOPUS:10944265783

VL - 151

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 11

ER -