INFLUENCE OF INTERFACIAL STRUCTURE ON THE ELECTRONIC PROPERTIES OF SiO2/InP MISFET`s.

K. M. Geib, S. M. Goodnick, D. Y. Lin, R. G. Gann, C. W. Wilmsen, J. F. Wager

Research output: Contribution to journalConference articlepeer-review

16 Scopus citations

Abstract

This paper presents results of an investigation of the deposited SiO//2/InP interface using XPS, UPS, and ELS combined with transport measurements on special Hall geometry MISFET's. Physical studies using XPS show the presence of a 20-40 A thick native oxide layer primarily composed of InPO//4 next to the InP and In//2O//3 close to the SiO//2. UPS and ELS data suggests that the In//2O//3 forms a trap level slightly above the conduction band. The variation of channel mobility with surface field and temperature imply that channel mobility is dominated by scattering from interface charges and surface roughness.

Original languageEnglish (US)
Pages (from-to)516-521
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume2
Issue number3
DOIs
StatePublished - Jan 1 1984
Externally publishedYes
EventProc of the Annu Conf on the Phys and Chem of Semicond Interfaces, 11th - Pinehurst, NC, USA
Duration: Jan 31 1984Feb 2 1984

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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