INFLUENCE OF INTERFACIAL STRUCTURE ON THE ELECTRONIC PROPERTIES OF SiO2/InP MISFET`s.

K. M. Geib; S. M. Goodnick; D. Y. Lin; R. G. Gann; C. W. Wilmsen; J. F. Wager

doi:10.1116/1.582810

INFLUENCE OF INTERFACIAL STRUCTURE ON THE ELECTRONIC PROPERTIES OF SiO₂/InP MISFET`s.

K. M. Geib, S. M. Goodnick, D. Y. Lin, R. G. Gann, C. W. Wilmsen, J. F. Wager

Research output: Contribution to journal › Conference article › peer-review

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Abstract

This paper presents results of an investigation of the deposited SiO//2/InP interface using XPS, UPS, and ELS combined with transport measurements on special Hall geometry MISFET's. Physical studies using XPS show the presence of a 20-40 A thick native oxide layer primarily composed of InPO//4 next to the InP and In//2O//3 close to the SiO//2. UPS and ELS data suggests that the In//2O//3 forms a trap level slightly above the conduction band. The variation of channel mobility with surface field and temperature imply that channel mobility is dominated by scattering from interface charges and surface roughness.

Original language	English (US)
Pages (from-to)	516-521
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	2
Issue number	3
DOIs	https://doi.org/10.1116/1.582810
State	Published - Jan 1 1984
Externally published	Yes
Event	Proc of the Annu Conf on the Phys and Chem of Semicond Interfaces, 11th - Pinehurst, NC, USA Duration: Jan 31 1984 → Feb 2 1984

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.582810

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title = "INFLUENCE OF INTERFACIAL STRUCTURE ON THE ELECTRONIC PROPERTIES OF SiO2/InP MISFET`s.",

abstract = "This paper presents results of an investigation of the deposited SiO//2/InP interface using XPS, UPS, and ELS combined with transport measurements on special Hall geometry MISFET's. Physical studies using XPS show the presence of a 20-40 A thick native oxide layer primarily composed of InPO//4 next to the InP and In//2O//3 close to the SiO//2. UPS and ELS data suggests that the In//2O//3 forms a trap level slightly above the conduction band. The variation of channel mobility with surface field and temperature imply that channel mobility is dominated by scattering from interface charges and surface roughness.",

author = "Geib, {K. M.} and Goodnick, {S. M.} and Lin, {D. Y.} and Gann, {R. G.} and Wilmsen, {C. W.} and Wager, {J. F.}",

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AU - Geib, K. M.

AU - Goodnick, S. M.

AU - Lin, D. Y.

AU - Gann, R. G.

AU - Wilmsen, C. W.

AU - Wager, J. F.

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N2 - This paper presents results of an investigation of the deposited SiO//2/InP interface using XPS, UPS, and ELS combined with transport measurements on special Hall geometry MISFET's. Physical studies using XPS show the presence of a 20-40 A thick native oxide layer primarily composed of InPO//4 next to the InP and In//2O//3 close to the SiO//2. UPS and ELS data suggests that the In//2O//3 forms a trap level slightly above the conduction band. The variation of channel mobility with surface field and temperature imply that channel mobility is dominated by scattering from interface charges and surface roughness.

AB - This paper presents results of an investigation of the deposited SiO//2/InP interface using XPS, UPS, and ELS combined with transport measurements on special Hall geometry MISFET's. Physical studies using XPS show the presence of a 20-40 A thick native oxide layer primarily composed of InPO//4 next to the InP and In//2O//3 close to the SiO//2. UPS and ELS data suggests that the In//2O//3 forms a trap level slightly above the conduction band. The variation of channel mobility with surface field and temperature imply that channel mobility is dominated by scattering from interface charges and surface roughness.

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INFLUENCE OF INTERFACIAL STRUCTURE ON THE ELECTRONIC PROPERTIES OF SiO₂/InP MISFET`s.

Abstract

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