Influence of interfacial copper on the Ti-SiO 2 reaction during nitridation of Cu-Ti films

Daniel Adams, Terry Alford, N. D. Theodore, T. Laursen, S. W. Russell, M. J. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Cu(90 nm)/Ti(20 nm) bilayers and Cu(Ti 27 at.%) alloy films were deposited on SiO 2 and annealed in an NH 3 ambient at temperatures 400-700° C for 30 min. During annealing Ti segregated to both the free surface and the alloy/SiO 2 interface. At the surface Ti reacted with NH 3 to form TiN, whereas at the interface the Ti reacted with the SiO 2 to form a TiO/Ti 5Si 3 structure. High resolution energy dispersive x-ray analysis revealed the presence of interfacial Cu between the Ti-silicide and Ti-oxide layers at temperatures greater than 450°C. Using Cu-Ti alloy films enhanced the SiO 2 consumption rate by a factor of 3-4 compared to that of pure Ti. It is suggested that the interfacial Cu is responsible for the increased rate. It is plausible that an interfacial Cu 2O component has a catalytic effect on the Ti- SiO 2 reaction.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages631-636
Number of pages6
Volume398
StatePublished - 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 27 1995Dec 1 1995

Other

OtherProceedings of the 1995 MRS Fall Meeting
CityBoston, MA, USA
Period11/27/9512/1/95

Fingerprint

Nitridation
Copper
Oxides
Annealing
X rays
Temperature
Ti-Cu alloy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Adams, D., Alford, T., Theodore, N. D., Laursen, T., Russell, S. W., & Kim, M. J. (1996). Influence of interfacial copper on the Ti-SiO 2 reaction during nitridation of Cu-Ti films In Materials Research Society Symposium - Proceedings (Vol. 398, pp. 631-636). Materials Research Society.

Influence of interfacial copper on the Ti-SiO 2 reaction during nitridation of Cu-Ti films . / Adams, Daniel; Alford, Terry; Theodore, N. D.; Laursen, T.; Russell, S. W.; Kim, M. J.

Materials Research Society Symposium - Proceedings. Vol. 398 Materials Research Society, 1996. p. 631-636.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Adams, D, Alford, T, Theodore, ND, Laursen, T, Russell, SW & Kim, MJ 1996, Influence of interfacial copper on the Ti-SiO 2 reaction during nitridation of Cu-Ti films in Materials Research Society Symposium - Proceedings. vol. 398, Materials Research Society, pp. 631-636, Proceedings of the 1995 MRS Fall Meeting, Boston, MA, USA, 11/27/95.
Adams D, Alford T, Theodore ND, Laursen T, Russell SW, Kim MJ. Influence of interfacial copper on the Ti-SiO 2 reaction during nitridation of Cu-Ti films In Materials Research Society Symposium - Proceedings. Vol. 398. Materials Research Society. 1996. p. 631-636
Adams, Daniel ; Alford, Terry ; Theodore, N. D. ; Laursen, T. ; Russell, S. W. ; Kim, M. J. / Influence of interfacial copper on the Ti-SiO 2 reaction during nitridation of Cu-Ti films Materials Research Society Symposium - Proceedings. Vol. 398 Materials Research Society, 1996. pp. 631-636
@inproceedings{205eb2242ce345548af5a763253aa5fa,
title = "Influence of interfacial copper on the Ti-SiO 2 reaction during nitridation of Cu-Ti films",
abstract = "Cu(90 nm)/Ti(20 nm) bilayers and Cu(Ti 27 at.{\%}) alloy films were deposited on SiO 2 and annealed in an NH 3 ambient at temperatures 400-700° C for 30 min. During annealing Ti segregated to both the free surface and the alloy/SiO 2 interface. At the surface Ti reacted with NH 3 to form TiN, whereas at the interface the Ti reacted with the SiO 2 to form a TiO/Ti 5Si 3 structure. High resolution energy dispersive x-ray analysis revealed the presence of interfacial Cu between the Ti-silicide and Ti-oxide layers at temperatures greater than 450°C. Using Cu-Ti alloy films enhanced the SiO 2 consumption rate by a factor of 3-4 compared to that of pure Ti. It is suggested that the interfacial Cu is responsible for the increased rate. It is plausible that an interfacial Cu 2O component has a catalytic effect on the Ti- SiO 2 reaction.",
author = "Daniel Adams and Terry Alford and Theodore, {N. D.} and T. Laursen and Russell, {S. W.} and Kim, {M. J.}",
year = "1996",
language = "English (US)",
volume = "398",
pages = "631--636",
booktitle = "Materials Research Society Symposium - Proceedings",
publisher = "Materials Research Society",

}

TY - GEN

T1 - Influence of interfacial copper on the Ti-SiO 2 reaction during nitridation of Cu-Ti films

AU - Adams, Daniel

AU - Alford, Terry

AU - Theodore, N. D.

AU - Laursen, T.

AU - Russell, S. W.

AU - Kim, M. J.

PY - 1996

Y1 - 1996

N2 - Cu(90 nm)/Ti(20 nm) bilayers and Cu(Ti 27 at.%) alloy films were deposited on SiO 2 and annealed in an NH 3 ambient at temperatures 400-700° C for 30 min. During annealing Ti segregated to both the free surface and the alloy/SiO 2 interface. At the surface Ti reacted with NH 3 to form TiN, whereas at the interface the Ti reacted with the SiO 2 to form a TiO/Ti 5Si 3 structure. High resolution energy dispersive x-ray analysis revealed the presence of interfacial Cu between the Ti-silicide and Ti-oxide layers at temperatures greater than 450°C. Using Cu-Ti alloy films enhanced the SiO 2 consumption rate by a factor of 3-4 compared to that of pure Ti. It is suggested that the interfacial Cu is responsible for the increased rate. It is plausible that an interfacial Cu 2O component has a catalytic effect on the Ti- SiO 2 reaction.

AB - Cu(90 nm)/Ti(20 nm) bilayers and Cu(Ti 27 at.%) alloy films were deposited on SiO 2 and annealed in an NH 3 ambient at temperatures 400-700° C for 30 min. During annealing Ti segregated to both the free surface and the alloy/SiO 2 interface. At the surface Ti reacted with NH 3 to form TiN, whereas at the interface the Ti reacted with the SiO 2 to form a TiO/Ti 5Si 3 structure. High resolution energy dispersive x-ray analysis revealed the presence of interfacial Cu between the Ti-silicide and Ti-oxide layers at temperatures greater than 450°C. Using Cu-Ti alloy films enhanced the SiO 2 consumption rate by a factor of 3-4 compared to that of pure Ti. It is suggested that the interfacial Cu is responsible for the increased rate. It is plausible that an interfacial Cu 2O component has a catalytic effect on the Ti- SiO 2 reaction.

UR - http://www.scopus.com/inward/record.url?scp=0029767518&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029767518&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0029767518

VL - 398

SP - 631

EP - 636

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

ER -