Influence of interfacial copper on the Ti-SiO
            2 reaction during nitridation of Cu-Ti films

Daniel Adams; Terry Alford; N. D. Theodore; T. Laursen; S. W. Russell; M. J. Kim

Influence of interfacial copper on the Ti-SiO ₂ reaction during nitridation of Cu-Ti films

Daniel Adams, Terry Alford, N. D. Theodore, T. Laursen, S. W. Russell, M. J. Kim

Chemical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Cu(90 nm)/Ti(20 nm) bilayers and Cu(Ti 27 at.%) alloy films were deposited on SiO ₂ and annealed in an NH ₃ ambient at temperatures 400-700° C for 30 min. During annealing Ti segregated to both the free surface and the alloy/SiO ₂ interface. At the surface Ti reacted with NH ₃ to form TiN, whereas at the interface the Ti reacted with the SiO ₂ to form a TiO/Ti ₅Si ₃ structure. High resolution energy dispersive x-ray analysis revealed the presence of interfacial Cu between the Ti-silicide and Ti-oxide layers at temperatures greater than 450°C. Using Cu-Ti alloy films enhanced the SiO ₂ consumption rate by a factor of 3-4 compared to that of pure Ti. It is suggested that the interfacial Cu is responsible for the increased rate. It is plausible that an interfacial Cu ₂O component has a catalytic effect on the Ti- SiO ₂ reaction.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Publisher	Materials Research Society
Pages	631-636
Number of pages	6
Volume	398
State	Published - 1996
Event	Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: Nov 27 1995 → Dec 1 1995

Other

Other	Proceedings of the 1995 MRS Fall Meeting
City	Boston, MA, USA
Period	11/27/95 → 12/1/95

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

@inproceedings{205eb2242ce345548af5a763253aa5fa,

title = "Influence of interfacial copper on the Ti-SiO 2 reaction during nitridation of Cu-Ti films ",

abstract = "Cu(90 nm)/Ti(20 nm) bilayers and Cu(Ti 27 at.%) alloy films were deposited on SiO 2 and annealed in an NH 3 ambient at temperatures 400-700° C for 30 min. During annealing Ti segregated to both the free surface and the alloy/SiO 2 interface. At the surface Ti reacted with NH 3 to form TiN, whereas at the interface the Ti reacted with the SiO 2 to form a TiO/Ti 5Si 3 structure. High resolution energy dispersive x-ray analysis revealed the presence of interfacial Cu between the Ti-silicide and Ti-oxide layers at temperatures greater than 450°C. Using Cu-Ti alloy films enhanced the SiO 2 consumption rate by a factor of 3-4 compared to that of pure Ti. It is suggested that the interfacial Cu is responsible for the increased rate. It is plausible that an interfacial Cu 2O component has a catalytic effect on the Ti- SiO 2 reaction. ",

author = "Daniel Adams and Terry Alford and Theodore, {N. D.} and T. Laursen and Russell, {S. W.} and Kim, {M. J.}",

year = "1996",

language = "English (US)",

volume = "398",

pages = "631--636",

booktitle = "Materials Research Society Symposium - Proceedings",

publisher = "Materials Research Society",

note = "Proceedings of the 1995 MRS Fall Meeting ; Conference date: 27-11-1995 Through 01-12-1995",

}

TY - GEN

T1 - Influence of interfacial copper on the Ti-SiO 2 reaction during nitridation of Cu-Ti films

AU - Adams, Daniel

AU - Alford, Terry

AU - Theodore, N. D.

AU - Laursen, T.

AU - Russell, S. W.

AU - Kim, M. J.

PY - 1996

Y1 - 1996

N2 - Cu(90 nm)/Ti(20 nm) bilayers and Cu(Ti 27 at.%) alloy films were deposited on SiO 2 and annealed in an NH 3 ambient at temperatures 400-700° C for 30 min. During annealing Ti segregated to both the free surface and the alloy/SiO 2 interface. At the surface Ti reacted with NH 3 to form TiN, whereas at the interface the Ti reacted with the SiO 2 to form a TiO/Ti 5Si 3 structure. High resolution energy dispersive x-ray analysis revealed the presence of interfacial Cu between the Ti-silicide and Ti-oxide layers at temperatures greater than 450°C. Using Cu-Ti alloy films enhanced the SiO 2 consumption rate by a factor of 3-4 compared to that of pure Ti. It is suggested that the interfacial Cu is responsible for the increased rate. It is plausible that an interfacial Cu 2O component has a catalytic effect on the Ti- SiO 2 reaction.

AB - Cu(90 nm)/Ti(20 nm) bilayers and Cu(Ti 27 at.%) alloy films were deposited on SiO 2 and annealed in an NH 3 ambient at temperatures 400-700° C for 30 min. During annealing Ti segregated to both the free surface and the alloy/SiO 2 interface. At the surface Ti reacted with NH 3 to form TiN, whereas at the interface the Ti reacted with the SiO 2 to form a TiO/Ti 5Si 3 structure. High resolution energy dispersive x-ray analysis revealed the presence of interfacial Cu between the Ti-silicide and Ti-oxide layers at temperatures greater than 450°C. Using Cu-Ti alloy films enhanced the SiO 2 consumption rate by a factor of 3-4 compared to that of pure Ti. It is suggested that the interfacial Cu is responsible for the increased rate. It is plausible that an interfacial Cu 2O component has a catalytic effect on the Ti- SiO 2 reaction.

UR - http://www.scopus.com/inward/record.url?scp=0029767518&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029767518&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0029767518

VL - 398

SP - 631

EP - 636

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

T2 - Proceedings of the 1995 MRS Fall Meeting

Y2 - 27 November 1995 through 1 December 1995

ER -

Influence of interfacial copper on the Ti-SiO ₂ reaction during nitridation of Cu-Ti films

Abstract

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