Abstract
Thick (μ1.3 μm) oxide films were grown by room-temperature oxidation of silicon after low-energy copper-ion implantation. The structural properties of the silicon dioxide layer and the implanted silicon were characterized by Rutherford backscattering spectrometry and transmission-electron microscopy. During the room temperature oxidation a portion of the implanted copper resided on the surface and a portion moved with the advancing Si/SiO2 interface. This study revealed that the oxide growth rate was dependent on the amount-of Cu present at the moving interface. The surface copper is essential for the dissociation of oxygen at the surface, and it is this oxygen that participates in the oxidation process. The resulting oxide formed was approximately stoichiometric silicon dioxide.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2074-2078 |
| Number of pages | 5 |
| Journal | Journal of Applied Physics |
| Volume | 79 |
| Issue number | 4 |
| State | Published - Feb 15 1996 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
Cite this
Influence of interfacial copper on the room temperature oxidation of silicon. / Alford, Terry; Jaquez, E. J.; Theodore, N. David; Russell, S. W.; Diale, M.; Adams, D.; Anders, Simone.
In: Journal of Applied Physics, Vol. 79, No. 4, 15.02.1996, p. 2074-2078.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Influence of interfacial copper on the room temperature oxidation of silicon
AU - Alford, Terry
AU - Jaquez, E. J.
AU - Theodore, N. David
AU - Russell, S. W.
AU - Diale, M.
AU - Adams, D.
AU - Anders, Simone
PY - 1996/2/15
Y1 - 1996/2/15
N2 - Thick (μ1.3 μm) oxide films were grown by room-temperature oxidation of silicon after low-energy copper-ion implantation. The structural properties of the silicon dioxide layer and the implanted silicon were characterized by Rutherford backscattering spectrometry and transmission-electron microscopy. During the room temperature oxidation a portion of the implanted copper resided on the surface and a portion moved with the advancing Si/SiO2 interface. This study revealed that the oxide growth rate was dependent on the amount-of Cu present at the moving interface. The surface copper is essential for the dissociation of oxygen at the surface, and it is this oxygen that participates in the oxidation process. The resulting oxide formed was approximately stoichiometric silicon dioxide.
AB - Thick (μ1.3 μm) oxide films were grown by room-temperature oxidation of silicon after low-energy copper-ion implantation. The structural properties of the silicon dioxide layer and the implanted silicon were characterized by Rutherford backscattering spectrometry and transmission-electron microscopy. During the room temperature oxidation a portion of the implanted copper resided on the surface and a portion moved with the advancing Si/SiO2 interface. This study revealed that the oxide growth rate was dependent on the amount-of Cu present at the moving interface. The surface copper is essential for the dissociation of oxygen at the surface, and it is this oxygen that participates in the oxidation process. The resulting oxide formed was approximately stoichiometric silicon dioxide.
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UR - http://www.scopus.com/inward/citedby.url?scp=0000243369&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0000243369
VL - 79
SP - 2074
EP - 2078
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 4
ER -