Influence of interfacial copper on the room temperature oxidation of silicon

Terry Alford; E. J. Jaquez; N. David Theodore; S. W. Russell; M. Diale; D. Adams; Simone Anders

doi:10.1063/1.361064

Influence of interfacial copper on the room temperature oxidation of silicon

Terry Alford, E. J. Jaquez, N. David Theodore, S. W. Russell, M. Diale, D. Adams, Simone Anders

IAFSE-SEMTE: Chemical Engineering

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Thick (μ1.3 μm) oxide films were grown by room-temperature oxidation of silicon after low-energy copper-ion implantation. The structural properties of the silicon dioxide layer and the implanted silicon were characterized by Rutherford backscattering spectrometry and transmission-electron microscopy. During the room temperature oxidation a portion of the implanted copper resided on the surface and a portion moved with the advancing Si/SiO₂ interface. This study revealed that the oxide growth rate was dependent on the amount-of Cu present at the moving interface. The surface copper is essential for the dissociation of oxygen at the surface, and it is this oxygen that participates in the oxidation process. The resulting oxide formed was approximately stoichiometric silicon dioxide.

Original language	English (US)
Pages (from-to)	2074-2078
Number of pages	5
Journal	Journal of Applied Physics
Volume	79
Issue number	4
DOIs	https://doi.org/10.1063/1.361064
State	Published - Feb 15 1996

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "Thick (μ1.3 μm) oxide films were grown by room-temperature oxidation of silicon after low-energy copper-ion implantation. The structural properties of the silicon dioxide layer and the implanted silicon were characterized by Rutherford backscattering spectrometry and transmission-electron microscopy. During the room temperature oxidation a portion of the implanted copper resided on the surface and a portion moved with the advancing Si/SiO2 interface. This study revealed that the oxide growth rate was dependent on the amount-of Cu present at the moving interface. The surface copper is essential for the dissociation of oxygen at the surface, and it is this oxygen that participates in the oxidation process. The resulting oxide formed was approximately stoichiometric silicon dioxide.",

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AU - Alford, Terry

AU - Jaquez, E. J.

AU - Theodore, N. David

AU - Russell, S. W.

AU - Diale, M.

AU - Adams, D.

AU - Anders, Simone

PY - 1996/2/15

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AB - Thick (μ1.3 μm) oxide films were grown by room-temperature oxidation of silicon after low-energy copper-ion implantation. The structural properties of the silicon dioxide layer and the implanted silicon were characterized by Rutherford backscattering spectrometry and transmission-electron microscopy. During the room temperature oxidation a portion of the implanted copper resided on the surface and a portion moved with the advancing Si/SiO2 interface. This study revealed that the oxide growth rate was dependent on the amount-of Cu present at the moving interface. The surface copper is essential for the dissociation of oxygen at the surface, and it is this oxygen that participates in the oxidation process. The resulting oxide formed was approximately stoichiometric silicon dioxide.

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Influence of interfacial copper on the room temperature oxidation of silicon

Abstract

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