Influence of interface roughness on quantum transport in nanoscale FinFET

H. Khan, D. Mamaluy, Dragica Vasileska

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The authors utilize a fully quantum mechanical transport simulator based on the contact block reduction method to investigate the influence of interface roughness in nanoscale FinFET devices. In this work we treat interface roughness by creating a random deviation at the ideal SiSi O2 interface in real space and then solving the quantum transport problem fully self-consistently with the gates for the resulting device potential. We study the influence of interface roughness on device capacitance, drain current, and gate leakage for different regimes of operation. Our simulation results show that gate leakage is significantly affected by surface roughness, even though the average oxide thickness remains approximately the same. On the other hand, the on current is comparatively less sensitive to the interface roughness for FinFET devices with a narrow fin width. Furthermore, we find that the interface roughness significantly affects both the intrinsic switching speed and, especially, the cutoff frequency of FinFET with a narrow fin thickness.

Original languageEnglish (US)
Pages (from-to)1437-1440
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume25
Issue number4
DOIs
StatePublished - 2007

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roughness
Surface roughness
fins
leakage
Drain current
Cutoff frequency
simulators
FinFET
surface roughness
Capacitance
cut-off
Simulators
capacitance
deviation
Oxides
oxides
simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

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AU - Vasileska, Dragica

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