Influence of high growth rate on GaAs-based solar cells grown by metalorganic chemical vapor deposition

Chaomin Zhang; Yeongho Kim; Chris Ebert; Nikolai N. Faleev; Christiana Honsberg

doi:10.1109/PVSC.2015.7356064

Influence of high growth rate on GaAs-based solar cells grown by metalorganic chemical vapor deposition

Chaomin Zhang, Yeongho Kim, Chris Ebert, Nikolai N. Faleev, Christiana Honsberg

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Single-junction GaAs-based solar cell structures are grown by metalorganic chemical vapor deposition system at the growth rates of 14 μm/hr and 56 μm/hr. The X-ray diffraction study reveals that the crystal quality of the structures with varying the growth rates is comparable. From the external quantum efficiency spectra, it is observed that different behaviors exist in the short wavelengths ( 500 nm) as the growth rate increases. The short-circuit current densities of the standard and fast grown cells are comparable. However, the open-circuit voltage of the fast grown cell is lower by above 40 mV as a result of the reduced minority carrier lifetime in the base layer, which is estimated by PC1D simulation.

Original language	English (US)
Title of host publication	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479979448
DOIs	https://doi.org/10.1109/PVSC.2015.7356064
State	Published - Dec 14 2015
Event	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: Jun 14 2015 → Jun 19 2015

Publication series

Name	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

Other

Other	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/Territory	United States
City	New Orleans
Period	6/14/15 → 6/19/15

Keywords

GaAs solar cells
PC1D
TRPL
high growth rate
metalorganic chemical vapor deposition
minority carrier lifetime
semiconductor growth

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2015.7356064

Cite this

Zhang, C., Kim, Y., Ebert, C., Faleev, N. N., & Honsberg, C. (2015). Influence of high growth rate on GaAs-based solar cells grown by metalorganic chemical vapor deposition. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 Article 7356064 (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7356064

Influence of high growth rate on GaAs-based solar cells grown by metalorganic chemical vapor deposition. / Zhang, Chaomin; Kim, Yeongho; Ebert, Chris et al.
2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7356064 (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhang, C, Kim, Y, Ebert, C, Faleev, NN & Honsberg, C 2015, Influence of high growth rate on GaAs-based solar cells grown by metalorganic chemical vapor deposition. in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7356064, 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015, Institute of Electrical and Electronics Engineers Inc., 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 6/14/15. https://doi.org/10.1109/PVSC.2015.7356064

Zhang C, Kim Y, Ebert C, Faleev NN, Honsberg C. Influence of high growth rate on GaAs-based solar cells grown by metalorganic chemical vapor deposition. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7356064. (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015). doi: 10.1109/PVSC.2015.7356064

@inproceedings{16b444b8538c46afbb96d7675d8c57ca,

title = "Influence of high growth rate on GaAs-based solar cells grown by metalorganic chemical vapor deposition",

abstract = "Single-junction GaAs-based solar cell structures are grown by metalorganic chemical vapor deposition system at the growth rates of 14 μm/hr and 56 μm/hr. The X-ray diffraction study reveals that the crystal quality of the structures with varying the growth rates is comparable. From the external quantum efficiency spectra, it is observed that different behaviors exist in the short wavelengths ( 500 nm) as the growth rate increases. The short-circuit current densities of the standard and fast grown cells are comparable. However, the open-circuit voltage of the fast grown cell is lower by above 40 mV as a result of the reduced minority carrier lifetime in the base layer, which is estimated by PC1D simulation.",

keywords = "GaAs solar cells, PC1D, TRPL, high growth rate, metalorganic chemical vapor deposition, minority carrier lifetime, semiconductor growth",

author = "Chaomin Zhang and Yeongho Kim and Chris Ebert and Faleev, {Nikolai N.} and Christiana Honsberg",

year = "2015",

month = dec,

day = "14",

doi = "10.1109/PVSC.2015.7356064",

language = "English (US)",

series = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",

note = "42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 ; Conference date: 14-06-2015 Through 19-06-2015",

}

TY - GEN

T1 - Influence of high growth rate on GaAs-based solar cells grown by metalorganic chemical vapor deposition

AU - Zhang, Chaomin

AU - Kim, Yeongho

AU - Ebert, Chris

AU - Faleev, Nikolai N.

AU - Honsberg, Christiana

PY - 2015/12/14

Y1 - 2015/12/14

N2 - Single-junction GaAs-based solar cell structures are grown by metalorganic chemical vapor deposition system at the growth rates of 14 μm/hr and 56 μm/hr. The X-ray diffraction study reveals that the crystal quality of the structures with varying the growth rates is comparable. From the external quantum efficiency spectra, it is observed that different behaviors exist in the short wavelengths ( 500 nm) as the growth rate increases. The short-circuit current densities of the standard and fast grown cells are comparable. However, the open-circuit voltage of the fast grown cell is lower by above 40 mV as a result of the reduced minority carrier lifetime in the base layer, which is estimated by PC1D simulation.

AB - Single-junction GaAs-based solar cell structures are grown by metalorganic chemical vapor deposition system at the growth rates of 14 μm/hr and 56 μm/hr. The X-ray diffraction study reveals that the crystal quality of the structures with varying the growth rates is comparable. From the external quantum efficiency spectra, it is observed that different behaviors exist in the short wavelengths ( 500 nm) as the growth rate increases. The short-circuit current densities of the standard and fast grown cells are comparable. However, the open-circuit voltage of the fast grown cell is lower by above 40 mV as a result of the reduced minority carrier lifetime in the base layer, which is estimated by PC1D simulation.

KW - GaAs solar cells

KW - PC1D

KW - TRPL

KW - high growth rate

KW - metalorganic chemical vapor deposition

KW - minority carrier lifetime

KW - semiconductor growth

UR - http://www.scopus.com/inward/record.url?scp=84961615944&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84961615944&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2015.7356064

DO - 10.1109/PVSC.2015.7356064

M3 - Conference contribution

AN - SCOPUS:84961615944

T3 - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

BT - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015

Y2 - 14 June 2015 through 19 June 2015

ER -

Influence of high growth rate on GaAs-based solar cells grown by metalorganic chemical vapor deposition

Abstract

Publication series

Other

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this