2 Citations (Scopus)

Abstract

Single-junction GaAs-based solar cell structures are grown by metalorganic chemical vapor deposition system at the growth rates of 14 μm/hr and 56 μm/hr. The X-ray diffraction study reveals that the crystal quality of the structures with varying the growth rates is comparable. From the external quantum efficiency spectra, it is observed that different behaviors exist in the short wavelengths ( 500 nm) as the growth rate increases. The short-circuit current densities of the standard and fast grown cells are comparable. However, the open-circuit voltage of the fast grown cell is lower by above 40 mV as a result of the reduced minority carrier lifetime in the base layer, which is estimated by PC1D simulation.

Original languageEnglish (US)
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479979448
DOIs
StatePublished - Dec 14 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: Jun 14 2015Jun 19 2015

Other

Other42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
CountryUnited States
CityNew Orleans
Period6/14/156/19/15

Fingerprint

Metallorganic chemical vapor deposition
Solar cells
Carrier lifetime
Open circuit voltage
Quantum efficiency
Short circuit currents
Current density
X ray diffraction
Wavelength
Crystals
gallium arsenide

Keywords

  • GaAs solar cells
  • high growth rate
  • metalorganic chemical vapor deposition
  • minority carrier lifetime
  • PC1D
  • semiconductor growth
  • TRPL

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Zhang, C., Kim, Y., Ebert, C., Faleev, N. N., & Honsberg, C. (2015). Influence of high growth rate on GaAs-based solar cells grown by metalorganic chemical vapor deposition. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 [7356064] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7356064

Influence of high growth rate on GaAs-based solar cells grown by metalorganic chemical vapor deposition. / Zhang, Chaomin; Kim, Yeongho; Ebert, Chris; Faleev, Nikolai N.; Honsberg, Christiana.

2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7356064.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zhang, C, Kim, Y, Ebert, C, Faleev, NN & Honsberg, C 2015, Influence of high growth rate on GaAs-based solar cells grown by metalorganic chemical vapor deposition. in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7356064, Institute of Electrical and Electronics Engineers Inc., 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 6/14/15. https://doi.org/10.1109/PVSC.2015.7356064
Zhang C, Kim Y, Ebert C, Faleev NN, Honsberg C. Influence of high growth rate on GaAs-based solar cells grown by metalorganic chemical vapor deposition. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7356064 https://doi.org/10.1109/PVSC.2015.7356064
Zhang, Chaomin ; Kim, Yeongho ; Ebert, Chris ; Faleev, Nikolai N. ; Honsberg, Christiana. / Influence of high growth rate on GaAs-based solar cells grown by metalorganic chemical vapor deposition. 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015.
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abstract = "Single-junction GaAs-based solar cell structures are grown by metalorganic chemical vapor deposition system at the growth rates of 14 μm/hr and 56 μm/hr. The X-ray diffraction study reveals that the crystal quality of the structures with varying the growth rates is comparable. From the external quantum efficiency spectra, it is observed that different behaviors exist in the short wavelengths ( 500 nm) as the growth rate increases. The short-circuit current densities of the standard and fast grown cells are comparable. However, the open-circuit voltage of the fast grown cell is lower by above 40 mV as a result of the reduced minority carrier lifetime in the base layer, which is estimated by PC1D simulation.",
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