Influence of electron-hole scattering on subpicosecond carrier relaxation in AlxGa1-xAsGaAs quantum wells

Stephen M. Goodnick, Paolo Lugli

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Abstract

We have simulated subpicosecond-time-scale pump-and-probe absorption experiments in AlxGa1-xAsGaAs quantum wells using an ensemble Monte Carlo calculation of the photoexcited electron-hole system. For excess carrier energies less than the optical-phonon energy, our results show that the apparent 200-fs relaxation observed in differential transmission experiments is directly attributable to relaxation of electrons through electron-electron scattering with inelastic electron-hole scattering playing a smaller role. Photoexcited holes are found to thermalize on a 50-fs time scale which is much shorter than the relaxation time of the electrons. However, a non-thermal hole distribution develops after the pulse due to optical-phonon absorption at 300 K which should give rise to absorption features at higher photon energies.

Original languageEnglish (US)
Pages (from-to)10135-10138
Number of pages4
JournalPhysical Review B
Volume38
Issue number14
DOIs
StatePublished - Jan 1 1988
Externally publishedYes

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ASJC Scopus subject areas

  • Condensed Matter Physics

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