Influence of dry and wet cleaning on the properties of rapid thermal grown and deposited gate dielectrics

Xiaoli Xu, Richard T. Kuehn, Mehmet C. Öztürk, Jimmie J. Wortman, Robert Nemanich, Gari S. Harris, Dennis M. Maher

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Various silicon surface cleaning processes for rapid thermal in-situ polysilicon/ oxide/silicon stacked gate structures have been evaluated. Metal-oxide-semiconductor capacitors were fabricated to assess the effects of cleaning on the quality of gate oxide structures produced by both rapid thermal oxidation (RTO) and rapid thermal chemical vapor deposition (RTCVD). Excellent electrical properties have been achieved for both RTO and RTCVD gate oxides formed on silicon wafers using either an ultraviole/zone (UV/O3) treatment or a modified RCA clean. On the contrary, poor electrical properties have been observed for RTO and RTCVD gate oxides formed on silicon wafers using a high temperature bake in Ar, H2, or high vacuum ambient. It has also been found that the electrical properties of the RTCVD gate oxides exhibit less dependence upon cleaning conditions than those of RTO gate oxides. This work demonstrates that initial surface condition prior to gate oxide formation plays an important role in determining the quality of RTO and RTCVD gate oxides.

Original languageEnglish (US)
Pages (from-to)335-339
Number of pages5
JournalJournal of Electronic Materials
Volume22
Issue number3
DOIs
StatePublished - Mar 1993
Externally publishedYes

Fingerprint

Gate dielectrics
cleaning
Cleaning
Oxides
oxides
vapor deposition
Chemical vapor deposition
oxidation
Oxidation
electrical properties
Electric properties
silicon
Silicon wafers
wafers
vacuum
Hot Temperature
high vacuum
silicon oxides
metal oxide semiconductors
Surface cleaning

Keywords

  • Metal-oxide-semiconductor
  • rapid thermal chemical vapor deposition
  • rapid thermal oxidation
  • surface clean

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Electrical and Electronic Engineering

Cite this

Influence of dry and wet cleaning on the properties of rapid thermal grown and deposited gate dielectrics. / Xu, Xiaoli; Kuehn, Richard T.; Öztürk, Mehmet C.; Wortman, Jimmie J.; Nemanich, Robert; Harris, Gari S.; Maher, Dennis M.

In: Journal of Electronic Materials, Vol. 22, No. 3, 03.1993, p. 335-339.

Research output: Contribution to journalArticle

Xu, Xiaoli ; Kuehn, Richard T. ; Öztürk, Mehmet C. ; Wortman, Jimmie J. ; Nemanich, Robert ; Harris, Gari S. ; Maher, Dennis M. / Influence of dry and wet cleaning on the properties of rapid thermal grown and deposited gate dielectrics. In: Journal of Electronic Materials. 1993 ; Vol. 22, No. 3. pp. 335-339.
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AU - Nemanich, Robert

AU - Harris, Gari S.

AU - Maher, Dennis M.

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