Influence of dry and wet cleaning on the properties of rapid thermal grown and deposited gate dielectrics

Xiaoli Xu, Richard T. Kuehn, Mehmet C. Öztürk, Jimmie J. Wortman, Robert J. Nemanich, Gari S. Harris, Dennis M. Maher

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

Various silicon surface cleaning processes for rapid thermal in-situ polysilicon/ oxide/silicon stacked gate structures have been evaluated. Metal-oxide-semiconductor capacitors were fabricated to assess the effects of cleaning on the quality of gate oxide structures produced by both rapid thermal oxidation (RTO) and rapid thermal chemical vapor deposition (RTCVD). Excellent electrical properties have been achieved for both RTO and RTCVD gate oxides formed on silicon wafers using either an ultraviole/zone (UV/O3) treatment or a modified RCA clean. On the contrary, poor electrical properties have been observed for RTO and RTCVD gate oxides formed on silicon wafers using a high temperature bake in Ar, H2, or high vacuum ambient. It has also been found that the electrical properties of the RTCVD gate oxides exhibit less dependence upon cleaning conditions than those of RTO gate oxides. This work demonstrates that initial surface condition prior to gate oxide formation plays an important role in determining the quality of RTO and RTCVD gate oxides.

Original languageEnglish (US)
Pages (from-to)335-339
Number of pages5
JournalJournal of Electronic Materials
Volume22
Issue number3
DOIs
StatePublished - Mar 1 1993
Externally publishedYes

Keywords

  • Metal-oxide-semiconductor
  • rapid thermal chemical vapor deposition
  • rapid thermal oxidation
  • surface clean

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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