Abstract

We investigate the temperature and pressure dependence of carrier recombination processes occurring in various GaAsSb/GaAs QW laser structures grown under similar growth conditions. Thermally activated carrier leakage via defects is found to be very sensitive to the strain induced interface imperfections. Nonradiative recombination is found to be sensitive to the number of QWs. A strain compensated MQW structure leads to a reduced contribution of nonradiative recombination to the threshold current density (J<inf>th</ inf>) and a high characteristic temperature (T<inf>0</inf>) of 73K at room temperature.

Original languageEnglish (US)
Title of host publication2010 Photonics Global Conference, PGC 2010
DOIs
StatePublished - 2010
Event2010 Photonics Global Conference, PGC 2010 - Orchard, Singapore
Duration: Dec 14 2010Dec 16 2010

Other

Other2010 Photonics Global Conference, PGC 2010
CountrySingapore
CityOrchard
Period12/14/1012/16/10

Fingerprint

Gallium Arsenide
Recombination
Laser
Lasers
defects
threshold currents
pressure dependence
lasers
Threshold current density
Defects
leakage
Imperfections
current density
Growth Conditions
Leakage
Temperature
temperature dependence
room temperature
temperature
Influence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mathematical Physics
  • Atomic and Molecular Physics, and Optics

Cite this

Hossain, N., Hild, K., Jin, S. R., Sweeney, S. J., Yu, S. Q., Johnson, S., ... Zhang, Y-H. (2010). Influence of device structures on carrier recombination in GaAsSb/GaAs QW lasers. In 2010 Photonics Global Conference, PGC 2010 [5706061] https://doi.org/10.1109/PGC.2010.5706061

Influence of device structures on carrier recombination in GaAsSb/GaAs QW lasers. / Hossain, N.; Hild, K.; Jin, S. R.; Sweeney, S. J.; Yu, S. Q.; Johnson, Shane; Ding, D.; Zhang, Yong-Hang.

2010 Photonics Global Conference, PGC 2010. 2010. 5706061.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hossain, N, Hild, K, Jin, SR, Sweeney, SJ, Yu, SQ, Johnson, S, Ding, D & Zhang, Y-H 2010, Influence of device structures on carrier recombination in GaAsSb/GaAs QW lasers. in 2010 Photonics Global Conference, PGC 2010., 5706061, 2010 Photonics Global Conference, PGC 2010, Orchard, Singapore, 12/14/10. https://doi.org/10.1109/PGC.2010.5706061
Hossain N, Hild K, Jin SR, Sweeney SJ, Yu SQ, Johnson S et al. Influence of device structures on carrier recombination in GaAsSb/GaAs QW lasers. In 2010 Photonics Global Conference, PGC 2010. 2010. 5706061 https://doi.org/10.1109/PGC.2010.5706061
Hossain, N. ; Hild, K. ; Jin, S. R. ; Sweeney, S. J. ; Yu, S. Q. ; Johnson, Shane ; Ding, D. ; Zhang, Yong-Hang. / Influence of device structures on carrier recombination in GaAsSb/GaAs QW lasers. 2010 Photonics Global Conference, PGC 2010. 2010.
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