1 Scopus citations

Abstract

We investigate the temperature and pressure dependence of carrier recombination processes occurring in various GaAsSb/GaAs QW laser structures grown under similar growth conditions. Thermally activated carrier leakage via defects is found to be very sensitive to the strain induced interface imperfections. Nonradiative recombination is found to be sensitive to the number of QWs. A strain compensated MQW structure leads to a reduced contribution of nonradiative recombination to the threshold current density (Jth) and a high characteristic temperature (T0) of 73K at room temperature.

Original languageEnglish (US)
Title of host publication2010 Photonics Global Conference, PGC 2010
DOIs
StatePublished - Dec 1 2010
Event2010 Photonics Global Conference, PGC 2010 - Orchard, Singapore
Duration: Dec 14 2010Dec 16 2010

Publication series

Name2010 Photonics Global Conference, PGC 2010

Other

Other2010 Photonics Global Conference, PGC 2010
CountrySingapore
CityOrchard
Period12/14/1012/16/10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mathematical Physics
  • Atomic and Molecular Physics, and Optics

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    Hossain, N., Hild, K., Jin, S. R., Sweeney, S. J., Yu, S. Q., Johnson, S., Ding, D., & Zhang, Y-H. (2010). Influence of device structures on carrier recombination in GaAsSb/GaAs QW lasers. In 2010 Photonics Global Conference, PGC 2010 [5706061] (2010 Photonics Global Conference, PGC 2010). https://doi.org/10.1109/PGC.2010.5706061