Abstract
We examine the effectiveness of hydrogen passivation as a function of defect type and microstructure at grain boundaries (GBs) in multicrystalline silicon. We analyze a solar cell with alternating mm-wide bare and SiN x-coated stripes using laser-beam-induced current, electron backscatter diffraction, X-ray fluorescence microscopy, and defect etching to correlate pre- and post-hydrogenation recombination activity with GB character, density of iron-silicide nanoprecipitates, and dislocations. A strong correlation was found between GB recombination activity and the nature/density of etch pits along the boundaries, while iron silicide precipitates above detection limits were found to play a less significant role.
Original language | English (US) |
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Pages (from-to) | 187-191 |
Number of pages | 5 |
Journal | Progress in Photovoltaics: Research and Applications |
Volume | 19 |
Issue number | 2 |
DOIs | |
State | Published - Mar 2011 |
Externally published | Yes |
Keywords
- defects
- dislocations
- hydrogen passivation
- iron
- multicrystalline silicon
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Condensed Matter Physics
- Electrical and Electronic Engineering