Abstract

This paper presents a study of Cu diffusion at various temperatures in thin SiO2 films and the influence of diffusion conditions on the switching of Programmable Metallization Cell (PMC) devices formed from such Cu-doped films. Film composition and diffusion products were analyzed using secondary ion mass spectroscopy, Rutherford backscattering spectrometry, X-ray diffraction and Raman spectroscopy methods. We found a strong dependence of the diffused Cu concentration, which varied between 0.8 at.% and 10- 3 at.%, on the annealing temperature. X-ray diffraction and Raman studies revealed that Cu does not react with the SiO2 network and remains in elemental form after diffusion for the annealing conditions used. PMC resistive memory cells were fabricated with such Cu-diffused SiO2 films and device performance, including the stability of the switching voltage, is discussed in the context of the material characteristics.

Original languageEnglish (US)
Pages (from-to)3293-3298
Number of pages6
JournalThin Solid Films
Volume518
Issue number12
DOIs
StatePublished - Apr 2 2010

Fingerprint

Data storage equipment
Metallizing
cells
Annealing
X ray diffraction
annealing
Rutherford backscattering spectroscopy
diffraction
Spectrometry
x ray spectroscopy
Raman spectroscopy
backscattering
mass spectroscopy
Ions
Thin films
Temperature
temperature
Electric potential
electric potential
products

Keywords

  • compositional characteristics
  • copper diffusion
  • copper-doped silicon dioxide
  • nanoionic devices
  • non-volatile memory
  • silicon dioxide based memory

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Influence of Cu diffusion conditions on the switching of Cu-SiO2-based resistive memory devices. / Thermadam, S. Puthen; Bhagat, S. K.; Alford, Terry; Sakaguchi, Y.; Kozicki, Michael; Mitkova, M.

In: Thin Solid Films, Vol. 518, No. 12, 02.04.2010, p. 3293-3298.

Research output: Contribution to journalArticle

Thermadam, S. Puthen ; Bhagat, S. K. ; Alford, Terry ; Sakaguchi, Y. ; Kozicki, Michael ; Mitkova, M. / Influence of Cu diffusion conditions on the switching of Cu-SiO2-based resistive memory devices. In: Thin Solid Films. 2010 ; Vol. 518, No. 12. pp. 3293-3298.
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