Abstract

A long minority carrier lifetime of 12.8 μs in a mid-wavelength infrared InAs/InAsSb type-II superlattice is observed at 15 K using time-resolved photoluminescence technique. The long carrier lifetime is due to carrier localization, which is confirmed by a 3 meV blue shift of the photoluminescence peak energy and the monotonic decrease of lifetime with increasing temperature from 15 K to 50 K, along with an increased photoluminescence linewidth below 40 K. In contrast, no carrier localization is observed in a long-wavelength infrared type-II superlattice at the same temperatures. Modeling results show that carrier localization is stronger in shorter period (9.9 nm) mid-wavelength infrared superlattices as compared to longer period (24.2 nm) long-wavelength infrared superlattices, indicating that the carrier localization originates mainly from InAs/InAsSb interface disorder. Although carrier localization enhances carrier lifetimes, it also adversely affects carrier transport, and thus should be carefully considered in the design and evaluation of InAs/InAsSb type-II superlattice photodetectors.

Original languageEnglish (US)
Article number201107
JournalApplied Physics Letters
Volume107
Issue number20
DOIs
StatePublished - Nov 16 2015

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carrier lifetime
minority carriers
superlattices
photoluminescence
wavelengths
blue shift
photometers
disorders
life (durability)
temperature
evaluation
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Influence of carrier localization on minority carrier lifetime in InAs/InAsSb type-II superlattices. / Lin, Zhi Yuan; Liu, Shi; Steenbergen, Elizabeth H.; Zhang, Yong-Hang.

In: Applied Physics Letters, Vol. 107, No. 20, 201107, 16.11.2015.

Research output: Contribution to journalArticle

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abstract = "A long minority carrier lifetime of 12.8 μs in a mid-wavelength infrared InAs/InAsSb type-II superlattice is observed at 15 K using time-resolved photoluminescence technique. The long carrier lifetime is due to carrier localization, which is confirmed by a 3 meV blue shift of the photoluminescence peak energy and the monotonic decrease of lifetime with increasing temperature from 15 K to 50 K, along with an increased photoluminescence linewidth below 40 K. In contrast, no carrier localization is observed in a long-wavelength infrared type-II superlattice at the same temperatures. Modeling results show that carrier localization is stronger in shorter period (9.9 nm) mid-wavelength infrared superlattices as compared to longer period (24.2 nm) long-wavelength infrared superlattices, indicating that the carrier localization originates mainly from InAs/InAsSb interface disorder. Although carrier localization enhances carrier lifetimes, it also adversely affects carrier transport, and thus should be carefully considered in the design and evaluation of InAs/InAsSb type-II superlattice photodetectors.",
author = "Lin, {Zhi Yuan} and Shi Liu and Steenbergen, {Elizabeth H.} and Yong-Hang Zhang",
year = "2015",
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AU - Lin, Zhi Yuan

AU - Liu, Shi

AU - Steenbergen, Elizabeth H.

AU - Zhang, Yong-Hang

PY - 2015/11/16

Y1 - 2015/11/16

N2 - A long minority carrier lifetime of 12.8 μs in a mid-wavelength infrared InAs/InAsSb type-II superlattice is observed at 15 K using time-resolved photoluminescence technique. The long carrier lifetime is due to carrier localization, which is confirmed by a 3 meV blue shift of the photoluminescence peak energy and the monotonic decrease of lifetime with increasing temperature from 15 K to 50 K, along with an increased photoluminescence linewidth below 40 K. In contrast, no carrier localization is observed in a long-wavelength infrared type-II superlattice at the same temperatures. Modeling results show that carrier localization is stronger in shorter period (9.9 nm) mid-wavelength infrared superlattices as compared to longer period (24.2 nm) long-wavelength infrared superlattices, indicating that the carrier localization originates mainly from InAs/InAsSb interface disorder. Although carrier localization enhances carrier lifetimes, it also adversely affects carrier transport, and thus should be carefully considered in the design and evaluation of InAs/InAsSb type-II superlattice photodetectors.

AB - A long minority carrier lifetime of 12.8 μs in a mid-wavelength infrared InAs/InAsSb type-II superlattice is observed at 15 K using time-resolved photoluminescence technique. The long carrier lifetime is due to carrier localization, which is confirmed by a 3 meV blue shift of the photoluminescence peak energy and the monotonic decrease of lifetime with increasing temperature from 15 K to 50 K, along with an increased photoluminescence linewidth below 40 K. In contrast, no carrier localization is observed in a long-wavelength infrared type-II superlattice at the same temperatures. Modeling results show that carrier localization is stronger in shorter period (9.9 nm) mid-wavelength infrared superlattices as compared to longer period (24.2 nm) long-wavelength infrared superlattices, indicating that the carrier localization originates mainly from InAs/InAsSb interface disorder. Although carrier localization enhances carrier lifetimes, it also adversely affects carrier transport, and thus should be carefully considered in the design and evaluation of InAs/InAsSb type-II superlattice photodetectors.

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