Influence of 6H-SiC(0001) substrate surface morphology on the growth of AIN epitaxial layers

V. M. Torres; J. L. Edwards; B. J. Wilkens; David Smith; R. B. Doak; I. S T Tsong

doi:10.1063/1.123431

Influence of 6H-SiC(0001) substrate surface morphology on the growth of AIN epitaxial layers

V. M. Torres, J. L. Edwards, B. J. Wilkens, David Smith, R. B. Doak, I. S T Tsong

Research output: Contribution to journal › Article › peer-review

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Abstract

Epitaxial AlN films were grown on 6H-SiC(0001) substrates using an ammonia supersonic seeded beam. The films grown on substrates etched in hydrogen at high temperatures were shown by ion beam channeling to exhibit a higher degree of order relative to those grown on the as-received substrates. Cross-sectional electron microscopy revealed sharper SiC-AlN interfaces with extended flat terraces. In particular, very few stacking mismatch boundaries were observed to originate from the 1.5 nm steps which correspond to the 6H stacking sequence of the substrate.

Original language	English (US)
Pages (from-to)	985-987
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	7
DOIs	https://doi.org/10.1063/1.123431
State	Published - Feb 15 1999

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Physics and Astronomy (miscellaneous)

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abstract = "Epitaxial AlN films were grown on 6H-SiC(0001) substrates using an ammonia supersonic seeded beam. The films grown on substrates etched in hydrogen at high temperatures were shown by ion beam channeling to exhibit a higher degree of order relative to those grown on the as-received substrates. Cross-sectional electron microscopy revealed sharper SiC-AlN interfaces with extended flat terraces. In particular, very few stacking mismatch boundaries were observed to originate from the 1.5 nm steps which correspond to the 6H stacking sequence of the substrate.",

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AU - Torres, V. M.

AU - Edwards, J. L.

AU - Wilkens, B. J.

AU - Smith, David

AU - Doak, R. B.

AU - Tsong, I. S T

PY - 1999/2/15

Y1 - 1999/2/15

N2 - Epitaxial AlN films were grown on 6H-SiC(0001) substrates using an ammonia supersonic seeded beam. The films grown on substrates etched in hydrogen at high temperatures were shown by ion beam channeling to exhibit a higher degree of order relative to those grown on the as-received substrates. Cross-sectional electron microscopy revealed sharper SiC-AlN interfaces with extended flat terraces. In particular, very few stacking mismatch boundaries were observed to originate from the 1.5 nm steps which correspond to the 6H stacking sequence of the substrate.

AB - Epitaxial AlN films were grown on 6H-SiC(0001) substrates using an ammonia supersonic seeded beam. The films grown on substrates etched in hydrogen at high temperatures were shown by ion beam channeling to exhibit a higher degree of order relative to those grown on the as-received substrates. Cross-sectional electron microscopy revealed sharper SiC-AlN interfaces with extended flat terraces. In particular, very few stacking mismatch boundaries were observed to originate from the 1.5 nm steps which correspond to the 6H stacking sequence of the substrate.

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Influence of 6H-SiC(0001) substrate surface morphology on the growth of AIN epitaxial layers

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