Inert gas jets for growth control in electron beam induced deposition

M. R. Henry; S. Kim; K. Rykaczewski; A. G. Fedorov

doi:10.1063/1.3605588

Inert gas jets for growth control in electron beam induced deposition

M. R. Henry, S. Kim, K. Rykaczewski, A. G. Fedorov

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

An inert, precursor free, argon jet is used to control the growth rate of electron beam induced deposition. Adjustment of the jet kinetic energy/inlet temperature can selectively increase surface diffusion to greatly enhance the deposition rate or deplete the surface precursor due to impact-stimulated desorption to minimize the deposition or completely clean the surface. Physical mechanisms for this process are described. While the electron beam is also observed to generate plasma upon interaction with an argon jet, our results indicate that plasma does not substantially contribute to the enhanced deposition rate.

Original language	English (US)
Article number	263109
Journal	Applied Physics Letters
Volume	98
Issue number	26
DOIs	https://doi.org/10.1063/1.3605588
State	Published - Jun 27 2011
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3605588

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title = "Inert gas jets for growth control in electron beam induced deposition",

abstract = "An inert, precursor free, argon jet is used to control the growth rate of electron beam induced deposition. Adjustment of the jet kinetic energy/inlet temperature can selectively increase surface diffusion to greatly enhance the deposition rate or deplete the surface precursor due to impact-stimulated desorption to minimize the deposition or completely clean the surface. Physical mechanisms for this process are described. While the electron beam is also observed to generate plasma upon interaction with an argon jet, our results indicate that plasma does not substantially contribute to the enhanced deposition rate.",

author = "Henry, {M. R.} and S. Kim and K. Rykaczewski and Fedorov, {A. G.}",

note = "Funding Information: NSF (Grant No. DMI 0403671) and Semiconductor Research Corporation (GRC Grant No. 2008OJ1864.1281 managed by Dan Herr) provided financial support for this work. The authors thank D. Pei of the Georgia Institute of Technology for contributing to development of the high-temperature gas injection system used in reported experiments.",

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AU - Henry, M. R.

AU - Kim, S.

AU - Rykaczewski, K.

AU - Fedorov, A. G.

N1 - Funding Information: NSF (Grant No. DMI 0403671) and Semiconductor Research Corporation (GRC Grant No. 2008OJ1864.1281 managed by Dan Herr) provided financial support for this work. The authors thank D. Pei of the Georgia Institute of Technology for contributing to development of the high-temperature gas injection system used in reported experiments.

PY - 2011/6/27

Y1 - 2011/6/27

N2 - An inert, precursor free, argon jet is used to control the growth rate of electron beam induced deposition. Adjustment of the jet kinetic energy/inlet temperature can selectively increase surface diffusion to greatly enhance the deposition rate or deplete the surface precursor due to impact-stimulated desorption to minimize the deposition or completely clean the surface. Physical mechanisms for this process are described. While the electron beam is also observed to generate plasma upon interaction with an argon jet, our results indicate that plasma does not substantially contribute to the enhanced deposition rate.

AB - An inert, precursor free, argon jet is used to control the growth rate of electron beam induced deposition. Adjustment of the jet kinetic energy/inlet temperature can selectively increase surface diffusion to greatly enhance the deposition rate or deplete the surface precursor due to impact-stimulated desorption to minimize the deposition or completely clean the surface. Physical mechanisms for this process are described. While the electron beam is also observed to generate plasma upon interaction with an argon jet, our results indicate that plasma does not substantially contribute to the enhanced deposition rate.

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Inert gas jets for growth control in electron beam induced deposition

Abstract

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