Inducing a junction in n-type InxGa(1-x)N

Joshua J. Williams; Todd L. Williamson; Mark A. Hoffbauer; Alec M. Fischer; Stephen Goodnick; Nikolai N. Faleev; Kunal Ghosh; Christiana Honsberg

doi:10.1116/1.4797489

Inducing a junction in n-type In_xGa_(1-x)N

Joshua J. Williams, Todd L. Williamson, Mark A. Hoffbauer, Alec M. Fischer, Stephen Goodnick, Nikolai N. Faleev, Kunal Ghosh, Christiana Honsberg

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The pseudo-binary alloy of indium_(x)gallium _(1-x)nitride has a compositionally dependent bandgap ranging from 0.65 to 3.42 eV, making it desirable for light emitting diodes and solar cell devices. Through modeling and film growth, the authors investigate the use of In_xGa_1-xN as an active layer in an induced junction. In an induced junction, electrostatics are used to create strong band bending at the surface of a doped material and invert the bands. The authors report modeling results, as well as preliminary film quality experiments for an induced junction in InGaN by space charge effects of neighboring materials, piezoelectric effects, and spontaneous polarization.

Original language	English (US)
Article number	03C127
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	31
Issue number	3
DOIs	https://doi.org/10.1116/1.4797489
State	Published - May 2013

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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title = "Inducing a junction in n-type InxGa(1-x)N",

abstract = "The pseudo-binary alloy of indium(x)gallium (1-x)nitride has a compositionally dependent bandgap ranging from 0.65 to 3.42 eV, making it desirable for light emitting diodes and solar cell devices. Through modeling and film growth, the authors investigate the use of InxGa1-xN as an active layer in an induced junction. In an induced junction, electrostatics are used to create strong band bending at the surface of a doped material and invert the bands. The authors report modeling results, as well as preliminary film quality experiments for an induced junction in InGaN by space charge effects of neighboring materials, piezoelectric effects, and spontaneous polarization.",

author = "Williams, {Joshua J.} and Williamson, {Todd L.} and Hoffbauer, {Mark A.} and Fischer, {Alec M.} and Stephen Goodnick and Faleev, {Nikolai N.} and Kunal Ghosh and Christiana Honsberg",

note = "Funding Information: This material was based upon work primarily supported by the Engineering Research Center Program of the National Science Foundation and the Office of Energy Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC-1041895. Any opinions, findings and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect those of the National Science Foundation or Department of Energy.",

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AU - Williams, Joshua J.

AU - Williamson, Todd L.

AU - Hoffbauer, Mark A.

AU - Fischer, Alec M.

AU - Goodnick, Stephen

AU - Faleev, Nikolai N.

AU - Ghosh, Kunal

AU - Honsberg, Christiana

N1 - Funding Information: This material was based upon work primarily supported by the Engineering Research Center Program of the National Science Foundation and the Office of Energy Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC-1041895. Any opinions, findings and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect those of the National Science Foundation or Department of Energy.

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N2 - The pseudo-binary alloy of indium(x)gallium (1-x)nitride has a compositionally dependent bandgap ranging from 0.65 to 3.42 eV, making it desirable for light emitting diodes and solar cell devices. Through modeling and film growth, the authors investigate the use of InxGa1-xN as an active layer in an induced junction. In an induced junction, electrostatics are used to create strong band bending at the surface of a doped material and invert the bands. The authors report modeling results, as well as preliminary film quality experiments for an induced junction in InGaN by space charge effects of neighboring materials, piezoelectric effects, and spontaneous polarization.

AB - The pseudo-binary alloy of indium(x)gallium (1-x)nitride has a compositionally dependent bandgap ranging from 0.65 to 3.42 eV, making it desirable for light emitting diodes and solar cell devices. Through modeling and film growth, the authors investigate the use of InxGa1-xN as an active layer in an induced junction. In an induced junction, electrostatics are used to create strong band bending at the surface of a doped material and invert the bands. The authors report modeling results, as well as preliminary film quality experiments for an induced junction in InGaN by space charge effects of neighboring materials, piezoelectric effects, and spontaneous polarization.

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Inducing a junction in n-type In_xGa_(1-x)N

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