Abstract

The pseudo-binary alloy of indium(x)gallium (1-x)nitride has a compositionally dependent bandgap ranging from 0.65 to 3.42 eV, making it desirable for light emitting diodes and solar cell devices. Through modeling and film growth, the authors investigate the use of InxGa1-xN as an active layer in an induced junction. In an induced junction, electrostatics are used to create strong band bending at the surface of a doped material and invert the bands. The authors report modeling results, as well as preliminary film quality experiments for an induced junction in InGaN by space charge effects of neighboring materials, piezoelectric effects, and spontaneous polarization.

Original languageEnglish (US)
Article number03C127
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume31
Issue number3
DOIs
StatePublished - May 2013

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Williams, J. J., Williamson, T. L., Hoffbauer, M. A., Fischer, A. M., Goodnick, S., Faleev, N. N., Ghosh, K., & Honsberg, C. (2013). Inducing a junction in n-type InxGa(1-x)N. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 31(3), [03C127]. https://doi.org/10.1116/1.4797489