Induced junction III-nitride solar cells for wide band gap solar cells: Modeling charge transport and band bending in polarized material

Joshua J. Williams, Kunal Ghosh, Nikolai N. Faleev, Todd L. Williamson, Christiana Honsberg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

III-N alloys of aluminum nitride, gallium nitride, and indium nitride are of high interest for solar cells as they span the majority of the solar spectrum from 6.2eV to 0.7eV. There are however challenges in creating conventional cells from these materials. Issues include an inability to produce high quality p-type material and polarization effects that block carrier transport in standard heterojunctions. We propose using an induced junction, a form of heterojunction, to create band bending and thus an effective p-n junction solely within n-type material. In this paper, we discuss theoretical equilibrium, transport, generation and recombination mechanisms within a III-N induced junction device. Recent experimental work with III-N material and device architectures will be added to help the model's accuracy.

Original languageEnglish (US)
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2144-2146
Number of pages3
ISBN (Print)9781479932993
DOIs
StatePublished - 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: Jun 16 2013Jun 21 2013

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/TerritoryUnited States
CityTampa, FL
Period6/16/136/21/13

Keywords

  • Heterojunction modeling
  • III-N materials
  • Surface inversion

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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