Indium nitride and indium gallium nitride layers grown on nanorods

R. F. Webster, D. Cherns, L. E. Goff, S. V. Novikov, C. T. Foxon, A. M. Fischer, Fernando Ponce

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Molecular beam epitaxy has been used to grow InN layers on both Si and SiC substrates and In0.5Ga0.5N layers on Si substrates using a nanorod precursor array. Transmission electron microscopy (TEM) studies show that nanorods grown first under N-rich conditions, and then under more metal-rich conditions to promote lateral growth are free of dislocations until coalescence occurs. At coalescence, dislocations are introduced at grain boundaries. These are predominantly twist boundaries, with better epitaxial alignment seen on SiC substrates. The lateral growth of In0.5Ga 0.5N is shown to be cubic, tentatively ascribed to the growth of basal plane stacking faults at the start of the lateral growth and the low growth temperatures used.

Original languageEnglish (US)
Article number012025
JournalJournal of Physics: Conference Series
Volume471
Issue number1
DOIs
StatePublished - 2013

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gallium nitrides
nanorods
nitrides
indium
coalescing
crystal defects
molecular beam epitaxy
grain boundaries
alignment
transmission electron microscopy
metals
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Webster, R. F., Cherns, D., Goff, L. E., Novikov, S. V., Foxon, C. T., Fischer, A. M., & Ponce, F. (2013). Indium nitride and indium gallium nitride layers grown on nanorods. Journal of Physics: Conference Series, 471(1), [012025]. https://doi.org/10.1088/1742-6596/471/1/012025

Indium nitride and indium gallium nitride layers grown on nanorods. / Webster, R. F.; Cherns, D.; Goff, L. E.; Novikov, S. V.; Foxon, C. T.; Fischer, A. M.; Ponce, Fernando.

In: Journal of Physics: Conference Series, Vol. 471, No. 1, 012025, 2013.

Research output: Contribution to journalArticle

Webster, RF, Cherns, D, Goff, LE, Novikov, SV, Foxon, CT, Fischer, AM & Ponce, F 2013, 'Indium nitride and indium gallium nitride layers grown on nanorods', Journal of Physics: Conference Series, vol. 471, no. 1, 012025. https://doi.org/10.1088/1742-6596/471/1/012025
Webster, R. F. ; Cherns, D. ; Goff, L. E. ; Novikov, S. V. ; Foxon, C. T. ; Fischer, A. M. ; Ponce, Fernando. / Indium nitride and indium gallium nitride layers grown on nanorods. In: Journal of Physics: Conference Series. 2013 ; Vol. 471, No. 1.
@article{3350d4a5d9d64c7f91b9ea7a16cd7779,
title = "Indium nitride and indium gallium nitride layers grown on nanorods",
abstract = "Molecular beam epitaxy has been used to grow InN layers on both Si and SiC substrates and In0.5Ga0.5N layers on Si substrates using a nanorod precursor array. Transmission electron microscopy (TEM) studies show that nanorods grown first under N-rich conditions, and then under more metal-rich conditions to promote lateral growth are free of dislocations until coalescence occurs. At coalescence, dislocations are introduced at grain boundaries. These are predominantly twist boundaries, with better epitaxial alignment seen on SiC substrates. The lateral growth of In0.5Ga 0.5N is shown to be cubic, tentatively ascribed to the growth of basal plane stacking faults at the start of the lateral growth and the low growth temperatures used.",
author = "Webster, {R. F.} and D. Cherns and Goff, {L. E.} and Novikov, {S. V.} and Foxon, {C. T.} and Fischer, {A. M.} and Fernando Ponce",
year = "2013",
doi = "10.1088/1742-6596/471/1/012025",
language = "English (US)",
volume = "471",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

TY - JOUR

T1 - Indium nitride and indium gallium nitride layers grown on nanorods

AU - Webster, R. F.

AU - Cherns, D.

AU - Goff, L. E.

AU - Novikov, S. V.

AU - Foxon, C. T.

AU - Fischer, A. M.

AU - Ponce, Fernando

PY - 2013

Y1 - 2013

N2 - Molecular beam epitaxy has been used to grow InN layers on both Si and SiC substrates and In0.5Ga0.5N layers on Si substrates using a nanorod precursor array. Transmission electron microscopy (TEM) studies show that nanorods grown first under N-rich conditions, and then under more metal-rich conditions to promote lateral growth are free of dislocations until coalescence occurs. At coalescence, dislocations are introduced at grain boundaries. These are predominantly twist boundaries, with better epitaxial alignment seen on SiC substrates. The lateral growth of In0.5Ga 0.5N is shown to be cubic, tentatively ascribed to the growth of basal plane stacking faults at the start of the lateral growth and the low growth temperatures used.

AB - Molecular beam epitaxy has been used to grow InN layers on both Si and SiC substrates and In0.5Ga0.5N layers on Si substrates using a nanorod precursor array. Transmission electron microscopy (TEM) studies show that nanorods grown first under N-rich conditions, and then under more metal-rich conditions to promote lateral growth are free of dislocations until coalescence occurs. At coalescence, dislocations are introduced at grain boundaries. These are predominantly twist boundaries, with better epitaxial alignment seen on SiC substrates. The lateral growth of In0.5Ga 0.5N is shown to be cubic, tentatively ascribed to the growth of basal plane stacking faults at the start of the lateral growth and the low growth temperatures used.

UR - http://www.scopus.com/inward/record.url?scp=84890736484&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84890736484&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/471/1/012025

DO - 10.1088/1742-6596/471/1/012025

M3 - Article

AN - SCOPUS:84890736484

VL - 471

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012025

ER -