We report indium incorporation properties on various nonpolar and semipolar free-standing GaN substrates. Electroluminescence characterization and x-ray diffraction (XRD) analysis indicate that the semipolar (20 2̄1̄) and (11 2̄2̄) planes have the highest indium incorporation rate among the studied planes. We also show that both indium composition and polarization-related electric fields impact the emission wavelength of the quantum wells (QWs). The different magnitudes and directions of the polarization-related electric fields for each orientation result in different potential profiles for the various semipolar and nonpolar QWs, leading to different emission wavelengths at a given indium composition.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)