Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells

Yuji Zhao; Qimin Yan; Chia Yen Huang; Shih Chieh Huang; Po Shan Hsu; Shinichi Tanaka; Chih Chien Pan; Yoshinobu Kawaguchi; Kenji Fujito; Chris G. Van De Walle; James S. Speck; Steven P. Denbaars; Shuji Nakamura; Daniel Feezell

doi:10.1063/1.4719100

Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells

Yuji Zhao, Qimin Yan, Chia Yen Huang, Shih Chieh Huang, Po Shan Hsu, Shinichi Tanaka, Chih Chien Pan, Yoshinobu Kawaguchi, Kenji Fujito, Chris G. Van De Walle, James S. Speck, Steven P. Denbaars, Shuji Nakamura, Daniel Feezell

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165 Scopus citations

Abstract

We report indium incorporation properties on various nonpolar and semipolar free-standing GaN substrates. Electroluminescence characterization and x-ray diffraction (XRD) analysis indicate that the semipolar (20 2̄1̄) and (11 2̄2̄) planes have the highest indium incorporation rate among the studied planes. We also show that both indium composition and polarization-related electric fields impact the emission wavelength of the quantum wells (QWs). The different magnitudes and directions of the polarization-related electric fields for each orientation result in different potential profiles for the various semipolar and nonpolar QWs, leading to different emission wavelengths at a given indium composition.

Original language	English (US)
Article number	201108
Journal	Applied Physics Letters
Volume	100
Issue number	20
DOIs	https://doi.org/10.1063/1.4719100
State	Published - May 14 2012
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4719100

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@article{09c65476a91e407a9cc122cf259e49cc,

title = "Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells",

abstract = "We report indium incorporation properties on various nonpolar and semipolar free-standing GaN substrates. Electroluminescence characterization and x-ray diffraction (XRD) analysis indicate that the semipolar (20 {\=2}{\=1}) and (11 {\=2}{\=2}) planes have the highest indium incorporation rate among the studied planes. We also show that both indium composition and polarization-related electric fields impact the emission wavelength of the quantum wells (QWs). The different magnitudes and directions of the polarization-related electric fields for each orientation result in different potential profiles for the various semipolar and nonpolar QWs, leading to different emission wavelengths at a given indium composition.",

author = "Yuji Zhao and Qimin Yan and Huang, {Chia Yen} and Huang, {Shih Chieh} and {Shan Hsu}, Po and Shinichi Tanaka and Pan, {Chih Chien} and Yoshinobu Kawaguchi and Kenji Fujito and {Van De Walle}, {Chris G.} and Speck, {James S.} and Denbaars, {Steven P.} and Shuji Nakamura and Daniel Feezell",

note = "Funding Information: Y. Zhao would like to thank Matthew T. Hardy and Erin C. Young for the helpful discussion of XRD analysis. The authors acknowledge the support of Solid State Lighting and Energy Center at UCSB. A portion of this work was done in the UCSB nanofabrication facility, part of the NSF funded NNIN. This work made use of MRL Central Facilities supported by the MRSEC Program of the National Science Foundation under Award No. DMR05-20415.",

year = "2012",

month = may,

day = "14",

doi = "10.1063/1.4719100",

language = "English (US)",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "20",

}

TY - JOUR

T1 - Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells

AU - Zhao, Yuji

AU - Yan, Qimin

AU - Huang, Chia Yen

AU - Huang, Shih Chieh

AU - Shan Hsu, Po

AU - Tanaka, Shinichi

AU - Pan, Chih Chien

AU - Kawaguchi, Yoshinobu

AU - Fujito, Kenji

AU - Van De Walle, Chris G.

AU - Speck, James S.

AU - Denbaars, Steven P.

AU - Nakamura, Shuji

AU - Feezell, Daniel

N1 - Funding Information: Y. Zhao would like to thank Matthew T. Hardy and Erin C. Young for the helpful discussion of XRD analysis. The authors acknowledge the support of Solid State Lighting and Energy Center at UCSB. A portion of this work was done in the UCSB nanofabrication facility, part of the NSF funded NNIN. This work made use of MRL Central Facilities supported by the MRSEC Program of the National Science Foundation under Award No. DMR05-20415.

PY - 2012/5/14

Y1 - 2012/5/14

N2 - We report indium incorporation properties on various nonpolar and semipolar free-standing GaN substrates. Electroluminescence characterization and x-ray diffraction (XRD) analysis indicate that the semipolar (20 2̄1̄) and (11 2̄2̄) planes have the highest indium incorporation rate among the studied planes. We also show that both indium composition and polarization-related electric fields impact the emission wavelength of the quantum wells (QWs). The different magnitudes and directions of the polarization-related electric fields for each orientation result in different potential profiles for the various semipolar and nonpolar QWs, leading to different emission wavelengths at a given indium composition.

AB - We report indium incorporation properties on various nonpolar and semipolar free-standing GaN substrates. Electroluminescence characterization and x-ray diffraction (XRD) analysis indicate that the semipolar (20 2̄1̄) and (11 2̄2̄) planes have the highest indium incorporation rate among the studied planes. We also show that both indium composition and polarization-related electric fields impact the emission wavelength of the quantum wells (QWs). The different magnitudes and directions of the polarization-related electric fields for each orientation result in different potential profiles for the various semipolar and nonpolar QWs, leading to different emission wavelengths at a given indium composition.

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U2 - 10.1063/1.4719100

DO - 10.1063/1.4719100

M3 - Article

AN - SCOPUS:84861813337

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 201108

ER -

Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells

Abstract

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