Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells

Yuji Zhao, Qimin Yan, Chia Yen Huang, Shih Chieh Huang, Po Shan Hsu, Shinichi Tanaka, Chih Chien Pan, Yoshinobu Kawaguchi, Kenji Fujito, Chris G. Van De Walle, James S. Speck, Steven P. Denbaars, Shuji Nakamura, Daniel Feezell

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140 Scopus citations

Abstract

We report indium incorporation properties on various nonpolar and semipolar free-standing GaN substrates. Electroluminescence characterization and x-ray diffraction (XRD) analysis indicate that the semipolar (20 2̄1̄) and (11 2̄2̄) planes have the highest indium incorporation rate among the studied planes. We also show that both indium composition and polarization-related electric fields impact the emission wavelength of the quantum wells (QWs). The different magnitudes and directions of the polarization-related electric fields for each orientation result in different potential profiles for the various semipolar and nonpolar QWs, leading to different emission wavelengths at a given indium composition.

Original languageEnglish (US)
Article number201108
JournalApplied Physics Letters
Volume100
Issue number20
DOIs
StatePublished - May 14 2012

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Zhao, Y., Yan, Q., Huang, C. Y., Huang, S. C., Shan Hsu, P., Tanaka, S., Pan, C. C., Kawaguchi, Y., Fujito, K., Van De Walle, C. G., Speck, J. S., Denbaars, S. P., Nakamura, S., & Feezell, D. (2012). Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells. Applied Physics Letters, 100(20), [201108]. https://doi.org/10.1063/1.4719100