We present the results of a three-dimensional, self-consistent ballistic quantum mechanical simulation of an indium arsenide (InAs) quantum wire metal oxide semiconductor field effect transistor with channel lengths of 30 and 10 nm. We find that both devices exhibit exceptional I on/I off ratio, reasonable subthreshold swing, and reduced threshold voltage variation. Furthermore, we find that the current in the 30 nm case is reduced at the high voltage end of the gate sweep due in part to interference due to lateral states set up in the channel of the device, but in the shorter channel case we do not find this effect for the voltages swept. This effect can be easily seen in the electron density as the perturbations in the density. We also find these states present in the drain voltage sweeps as well. These states present a possible problem for use in complementary metal oxide semiconductor architectures. Finally, we compare the performance of the 10 nm InAs trigate device to a similar silicon device. We find that, when a suitable gate material and doping density is chosen, the InAs devices perform comparably to silicon devices in the ballistic limit.
|Original language||English (US)|
|Journal||Journal of Applied Physics|
|State||Published - Mar 1 2006|
ASJC Scopus subject areas
- Physics and Astronomy(all)