Indium arsenide quantum wire trigate metal oxide semiconductor field effect transistor

M. J. Gilbert, D. K. Ferry

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We present the results of a three-dimensional, self-consistent ballistic quantum mechanical simulation of an indium arsenide (InAs) quantum wire metal oxide semiconductor field effect transistor with channel lengths of 30 and 10 nm. We find that both devices exhibit exceptional I on/I off ratio, reasonable subthreshold swing, and reduced threshold voltage variation. Furthermore, we find that the current in the 30 nm case is reduced at the high voltage end of the gate sweep due in part to interference due to lateral states set up in the channel of the device, but in the shorter channel case we do not find this effect for the voltages swept. This effect can be easily seen in the electron density as the perturbations in the density. We also find these states present in the drain voltage sweeps as well. These states present a possible problem for use in complementary metal oxide semiconductor architectures. Finally, we compare the performance of the 10 nm InAs trigate device to a similar silicon device. We find that, when a suitable gate material and doping density is chosen, the InAs devices perform comparably to silicon devices in the ballistic limit.

Original languageEnglish (US)
Article number054503
JournalJournal of Applied Physics
Volume99
Issue number5
DOIs
StatePublished - Mar 1 2006

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quantum wires
metal oxide semiconductors
indium
field effect transistors
ballistics
electric potential
silicon
threshold voltage
high voltages
CMOS
interference
perturbation
simulation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Indium arsenide quantum wire trigate metal oxide semiconductor field effect transistor. / Gilbert, M. J.; Ferry, D. K.

In: Journal of Applied Physics, Vol. 99, No. 5, 054503, 01.03.2006.

Research output: Contribution to journalArticle

@article{9c0d27f177c14226a03872fbb7ff4950,
title = "Indium arsenide quantum wire trigate metal oxide semiconductor field effect transistor",
abstract = "We present the results of a three-dimensional, self-consistent ballistic quantum mechanical simulation of an indium arsenide (InAs) quantum wire metal oxide semiconductor field effect transistor with channel lengths of 30 and 10 nm. We find that both devices exhibit exceptional I on/I off ratio, reasonable subthreshold swing, and reduced threshold voltage variation. Furthermore, we find that the current in the 30 nm case is reduced at the high voltage end of the gate sweep due in part to interference due to lateral states set up in the channel of the device, but in the shorter channel case we do not find this effect for the voltages swept. This effect can be easily seen in the electron density as the perturbations in the density. We also find these states present in the drain voltage sweeps as well. These states present a possible problem for use in complementary metal oxide semiconductor architectures. Finally, we compare the performance of the 10 nm InAs trigate device to a similar silicon device. We find that, when a suitable gate material and doping density is chosen, the InAs devices perform comparably to silicon devices in the ballistic limit.",
author = "Gilbert, {M. J.} and Ferry, {D. K.}",
year = "2006",
month = "3",
day = "1",
doi = "10.1063/1.2179135",
language = "English (US)",
volume = "99",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

TY - JOUR

T1 - Indium arsenide quantum wire trigate metal oxide semiconductor field effect transistor

AU - Gilbert, M. J.

AU - Ferry, D. K.

PY - 2006/3/1

Y1 - 2006/3/1

N2 - We present the results of a three-dimensional, self-consistent ballistic quantum mechanical simulation of an indium arsenide (InAs) quantum wire metal oxide semiconductor field effect transistor with channel lengths of 30 and 10 nm. We find that both devices exhibit exceptional I on/I off ratio, reasonable subthreshold swing, and reduced threshold voltage variation. Furthermore, we find that the current in the 30 nm case is reduced at the high voltage end of the gate sweep due in part to interference due to lateral states set up in the channel of the device, but in the shorter channel case we do not find this effect for the voltages swept. This effect can be easily seen in the electron density as the perturbations in the density. We also find these states present in the drain voltage sweeps as well. These states present a possible problem for use in complementary metal oxide semiconductor architectures. Finally, we compare the performance of the 10 nm InAs trigate device to a similar silicon device. We find that, when a suitable gate material and doping density is chosen, the InAs devices perform comparably to silicon devices in the ballistic limit.

AB - We present the results of a three-dimensional, self-consistent ballistic quantum mechanical simulation of an indium arsenide (InAs) quantum wire metal oxide semiconductor field effect transistor with channel lengths of 30 and 10 nm. We find that both devices exhibit exceptional I on/I off ratio, reasonable subthreshold swing, and reduced threshold voltage variation. Furthermore, we find that the current in the 30 nm case is reduced at the high voltage end of the gate sweep due in part to interference due to lateral states set up in the channel of the device, but in the shorter channel case we do not find this effect for the voltages swept. This effect can be easily seen in the electron density as the perturbations in the density. We also find these states present in the drain voltage sweeps as well. These states present a possible problem for use in complementary metal oxide semiconductor architectures. Finally, we compare the performance of the 10 nm InAs trigate device to a similar silicon device. We find that, when a suitable gate material and doping density is chosen, the InAs devices perform comparably to silicon devices in the ballistic limit.

UR - http://www.scopus.com/inward/record.url?scp=33645242863&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645242863&partnerID=8YFLogxK

U2 - 10.1063/1.2179135

DO - 10.1063/1.2179135

M3 - Article

VL - 99

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 5

M1 - 054503

ER -