Indium arsenide quantum wire tri-gate metal oxide semiconductor field effect transistor

M. J. Gilbert, D. K. Ferry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present the results of a three-dimensional, self-consistent ballistic quantum simulation of an indium arsenide (InAs) quantum wire metal oxide semiconductor field effect transistor (MOSFET) with channel lengths of 30 nm and 10 nm. We find that both devices exhibit exceptional I on/I off ratio, reasonable subthreshold swing and reduced threshold voltage variation. Furthermore, we find that the current in the 30 nm case is reduced at the end of the sweep due in part to tunneling through lateral states set up in the channel of the device, but in the shorter channel case we do not find this effect for the voltages swept. This effect can be easily seen in the electron density as the perturbations in the density. We also find these tunneling states present in the drain voltage sweeps as well. These tunneling states present a possible problem for use in CMOS architectures.

Original languageEnglish (US)
Title of host publication2005 5th IEEE Conference on Nanotechnology
Pages711-714
Number of pages4
Volume2
DOIs
StatePublished - 2005
Event2005 5th IEEE Conference on Nanotechnology - Nagoya, Japan
Duration: Jul 11 2005Jul 15 2005

Other

Other2005 5th IEEE Conference on Nanotechnology
CountryJapan
CityNagoya
Period7/11/057/15/05

Fingerprint

Indium arsenide
Semiconductor quantum wires
MOSFET devices
Electric potential
Ballistics
Threshold voltage
Carrier concentration

Keywords

  • MOSFET
  • Quantum Simulation
  • Quantum Wire

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Gilbert, M. J., & Ferry, D. K. (2005). Indium arsenide quantum wire tri-gate metal oxide semiconductor field effect transistor. In 2005 5th IEEE Conference on Nanotechnology (Vol. 2, pp. 711-714). [1500816] https://doi.org/10.1109/NANO.2005.1500816

Indium arsenide quantum wire tri-gate metal oxide semiconductor field effect transistor. / Gilbert, M. J.; Ferry, D. K.

2005 5th IEEE Conference on Nanotechnology. Vol. 2 2005. p. 711-714 1500816.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gilbert, MJ & Ferry, DK 2005, Indium arsenide quantum wire tri-gate metal oxide semiconductor field effect transistor. in 2005 5th IEEE Conference on Nanotechnology. vol. 2, 1500816, pp. 711-714, 2005 5th IEEE Conference on Nanotechnology, Nagoya, Japan, 7/11/05. https://doi.org/10.1109/NANO.2005.1500816
Gilbert MJ, Ferry DK. Indium arsenide quantum wire tri-gate metal oxide semiconductor field effect transistor. In 2005 5th IEEE Conference on Nanotechnology. Vol. 2. 2005. p. 711-714. 1500816 https://doi.org/10.1109/NANO.2005.1500816
Gilbert, M. J. ; Ferry, D. K. / Indium arsenide quantum wire tri-gate metal oxide semiconductor field effect transistor. 2005 5th IEEE Conference on Nanotechnology. Vol. 2 2005. pp. 711-714
@inproceedings{b9427f1e46ff4f97bbb4aa4d574585f5,
title = "Indium arsenide quantum wire tri-gate metal oxide semiconductor field effect transistor",
abstract = "We present the results of a three-dimensional, self-consistent ballistic quantum simulation of an indium arsenide (InAs) quantum wire metal oxide semiconductor field effect transistor (MOSFET) with channel lengths of 30 nm and 10 nm. We find that both devices exhibit exceptional I on/I off ratio, reasonable subthreshold swing and reduced threshold voltage variation. Furthermore, we find that the current in the 30 nm case is reduced at the end of the sweep due in part to tunneling through lateral states set up in the channel of the device, but in the shorter channel case we do not find this effect for the voltages swept. This effect can be easily seen in the electron density as the perturbations in the density. We also find these tunneling states present in the drain voltage sweeps as well. These tunneling states present a possible problem for use in CMOS architectures.",
keywords = "MOSFET, Quantum Simulation, Quantum Wire",
author = "Gilbert, {M. J.} and Ferry, {D. K.}",
year = "2005",
doi = "10.1109/NANO.2005.1500816",
language = "English (US)",
isbn = "0780391993",
volume = "2",
pages = "711--714",
booktitle = "2005 5th IEEE Conference on Nanotechnology",

}

TY - GEN

T1 - Indium arsenide quantum wire tri-gate metal oxide semiconductor field effect transistor

AU - Gilbert, M. J.

AU - Ferry, D. K.

PY - 2005

Y1 - 2005

N2 - We present the results of a three-dimensional, self-consistent ballistic quantum simulation of an indium arsenide (InAs) quantum wire metal oxide semiconductor field effect transistor (MOSFET) with channel lengths of 30 nm and 10 nm. We find that both devices exhibit exceptional I on/I off ratio, reasonable subthreshold swing and reduced threshold voltage variation. Furthermore, we find that the current in the 30 nm case is reduced at the end of the sweep due in part to tunneling through lateral states set up in the channel of the device, but in the shorter channel case we do not find this effect for the voltages swept. This effect can be easily seen in the electron density as the perturbations in the density. We also find these tunneling states present in the drain voltage sweeps as well. These tunneling states present a possible problem for use in CMOS architectures.

AB - We present the results of a three-dimensional, self-consistent ballistic quantum simulation of an indium arsenide (InAs) quantum wire metal oxide semiconductor field effect transistor (MOSFET) with channel lengths of 30 nm and 10 nm. We find that both devices exhibit exceptional I on/I off ratio, reasonable subthreshold swing and reduced threshold voltage variation. Furthermore, we find that the current in the 30 nm case is reduced at the end of the sweep due in part to tunneling through lateral states set up in the channel of the device, but in the shorter channel case we do not find this effect for the voltages swept. This effect can be easily seen in the electron density as the perturbations in the density. We also find these tunneling states present in the drain voltage sweeps as well. These tunneling states present a possible problem for use in CMOS architectures.

KW - MOSFET

KW - Quantum Simulation

KW - Quantum Wire

UR - http://www.scopus.com/inward/record.url?scp=33746879592&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33746879592&partnerID=8YFLogxK

U2 - 10.1109/NANO.2005.1500816

DO - 10.1109/NANO.2005.1500816

M3 - Conference contribution

AN - SCOPUS:33746879592

SN - 0780391993

SN - 9780780391994

VL - 2

SP - 711

EP - 714

BT - 2005 5th IEEE Conference on Nanotechnology

ER -