Indium arsenide quantum wire tri-gate metal oxide semiconductor field effect transistor

We present the results of a three-dimensional, self-consistent ballistic quantum simulation of an indium arsenide (InAs) quantum wire metal oxide semiconductor field effect transistor (MOSFET) with channel lengths of 30 nm and 10 nm. We find that both devices exhibit exceptional I _on/I _off ratio, reasonable subthreshold swing and reduced threshold voltage variation. Furthermore, we find that the current in the 30 nm case is reduced at the end of the sweep due in part to tunneling through lateral states set up in the channel of the device, but in the shorter channel case we do not find this effect for the voltages swept. This effect can be easily seen in the electron density as the perturbations in the density. We also find these tunneling states present in the drain voltage sweeps as well. These tunneling states present a possible problem for use in CMOS architectures.