Increasing throughput in low pressure chemical vapor deposition: an optimal control approach

Timothy S. Cale, Peter E. Crouch, Lijuan Song, Konstantinos Tsakalis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

The application of optimal control theory to the process of low pressure chemical vapor deposition on patterned surfaces can substantially decrease the processing time for a given step coverage, compared with the programmed rate chemical vapor deposition (PRCVD) process. The control model is developed from the simultaneous one-dimensional Knudsen diffusion and chemical reaction description. For such a model, the optimal control problem is formulated as to find a temperature trajectory yielding the minimum processing time and its solution is computed numerically via a modified variation of extremals method. For the thermally activated deposition of silicon dioxide from tetraethylorthosilicate (TEOS) and for a ninety-six percent step coverage, the optimal control-generated temperature trajectory results in time-savings of approximately twenty-eight percent, when compared to the PRCVD approach.

Original languageEnglish (US)
Title of host publicationProceedings of the American Control Conference
Pages1289-1293
Number of pages5
Volume2
StatePublished - 1995
EventProceedings of the 1995 American Control Conference. Part 1 (of 6) - Seattle, WA, USA
Duration: Jun 21 1995Jun 23 1995

Other

OtherProceedings of the 1995 American Control Conference. Part 1 (of 6)
CitySeattle, WA, USA
Period6/21/956/23/95

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ASJC Scopus subject areas

  • Control and Systems Engineering

Cite this

Cale, T. S., Crouch, P. E., Song, L., & Tsakalis, K. (1995). Increasing throughput in low pressure chemical vapor deposition: an optimal control approach. In Proceedings of the American Control Conference (Vol. 2, pp. 1289-1293)