Abstract
The application of optimal control theory to the process of low pressure chemical vapor deposition on patterned surfaces can substantially decrease the processing time for a given step coverage, compared with the programmed rate chemical vapor deposition (PRCVD) process. The control model is developed from the simultaneous one-dimensional Knudsen diffusion and chemical reaction description. For such a model, the optimal control problem is formulated as to find a temperature trajectory yielding the minimum processing time and its solution is computed numerically via a modified variation of extremals method. For the thermally activated deposition of silicon dioxide from tetraethylorthosilicate (TEOS) and for a ninety-six percent step coverage, the optimal control-generated temperature trajectory results in time-savings of approximately twenty-eight percent, when compared to the PRCVD approach.
Original language | English (US) |
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Title of host publication | Proceedings of the American Control Conference |
Pages | 1289-1293 |
Number of pages | 5 |
Volume | 2 |
State | Published - 1995 |
Event | Proceedings of the 1995 American Control Conference. Part 1 (of 6) - Seattle, WA, USA Duration: Jun 21 1995 → Jun 23 1995 |
Other
Other | Proceedings of the 1995 American Control Conference. Part 1 (of 6) |
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City | Seattle, WA, USA |
Period | 6/21/95 → 6/23/95 |
ASJC Scopus subject areas
- Control and Systems Engineering