INCREASING THE CONDUCTIVITY OF POLYCRYSTALLINE SILICON BY RAPID THERMAL PROCESSING BEFORE AND AFTER ION IMPLANTATION.

R. B. Gregory; S. R. Wilson; W. M. Paulson; Stephen Krause; J. A. Leavitt; L. C. McIntyre; J. L. Seerveld; P. Stoss

INCREASING THE CONDUCTIVITY OF POLYCRYSTALLINE SILICON BY RAPID THERMAL PROCESSING BEFORE AND AFTER ION IMPLANTATION.

R. B. Gregory, S. R. Wilson, W. M. Paulson, Stephen Krause, J. A. Leavitt, L. C. McIntyre, J. L. Seerveld, P. Stoss

Chemical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Polycrystalline silicon films on oxidized silicon wafers have been subjected to rapid thermal processing before arsenic or boron ion implantation (pre-implant anneal). The films have then been ion implanted and given another rapid thermal process step to activate the dopant and repair the implant damage. The pre-implant anneal has caused the as-deposited grain size to increase by approximately a factor of ten. After the activation anneal these films have shown a 10 to 100% lower sheet resistance than films which did not receive a pre-implant anneal. The increase in grain size by the pre-implant anneal reduced the grain boundary area and as a result reduced the amount of dopant trapped in the grain boundaries relative to that which was actually inside the grains.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	Devendra K. Sadana, Michael I. Current
Place of Publication	Bellingham, WA, USA
Publisher	SPIE
Pages	119-126
Number of pages	8
Volume	623
ISBN (Print)	0892526580
State	Published - 1986

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Cite this

Gregory, R. B., Wilson, S. R., Paulson, W. M., Krause, S., Leavitt, J. A., McIntyre, L. C., Seerveld, J. L., & Stoss, P. (1986). INCREASING THE CONDUCTIVITY OF POLYCRYSTALLINE SILICON BY RAPID THERMAL PROCESSING BEFORE AND AFTER ION IMPLANTATION. In D. K. Sadana, & M. I. Current (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 623, pp. 119-126). SPIE.

INCREASING THE CONDUCTIVITY OF POLYCRYSTALLINE SILICON BY RAPID THERMAL PROCESSING BEFORE AND AFTER ION IMPLANTATION. / Gregory, R. B.; Wilson, S. R.; Paulson, W. M. et al.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / Devendra K. Sadana; Michael I. Current. Vol. 623 Bellingham, WA, USA: SPIE, 1986. p. 119-126.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Gregory, RB, Wilson, SR, Paulson, WM, Krause, S, Leavitt, JA, McIntyre, LC, Seerveld, JL & Stoss, P 1986, INCREASING THE CONDUCTIVITY OF POLYCRYSTALLINE SILICON BY RAPID THERMAL PROCESSING BEFORE AND AFTER ION IMPLANTATION. in DK Sadana & MI Current (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 623, SPIE, Bellingham, WA, USA, pp. 119-126.

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abstract = "Polycrystalline silicon films on oxidized silicon wafers have been subjected to rapid thermal processing before arsenic or boron ion implantation (pre-implant anneal). The films have then been ion implanted and given another rapid thermal process step to activate the dopant and repair the implant damage. The pre-implant anneal has caused the as-deposited grain size to increase by approximately a factor of ten. After the activation anneal these films have shown a 10 to 100% lower sheet resistance than films which did not receive a pre-implant anneal. The increase in grain size by the pre-implant anneal reduced the grain boundary area and as a result reduced the amount of dopant trapped in the grain boundaries relative to that which was actually inside the grains.",

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AB - Polycrystalline silicon films on oxidized silicon wafers have been subjected to rapid thermal processing before arsenic or boron ion implantation (pre-implant anneal). The films have then been ion implanted and given another rapid thermal process step to activate the dopant and repair the implant damage. The pre-implant anneal has caused the as-deposited grain size to increase by approximately a factor of ten. After the activation anneal these films have shown a 10 to 100% lower sheet resistance than films which did not receive a pre-implant anneal. The increase in grain size by the pre-implant anneal reduced the grain boundary area and as a result reduced the amount of dopant trapped in the grain boundaries relative to that which was actually inside the grains.

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INCREASING THE CONDUCTIVITY OF POLYCRYSTALLINE SILICON BY RAPID THERMAL PROCESSING BEFORE AND AFTER ION IMPLANTATION.

Abstract

ASJC Scopus subject areas

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