INCREASING THE CONDUCTIVITY OF POLYCRYSTALLINE SILICON BY RAPID THERMAL PROCESSING BEFORE AND AFTER ION IMPLANTATION.

R. B. Gregory, S. R. Wilson, W. M. Paulson, Stephen Krause, J. A. Leavitt, L. C. McIntyre, J. L. Seerveld, P. Stoss

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Polycrystalline silicon films on oxidized silicon wafers have been subjected to rapid thermal processing before arsenic or boron ion implantation (pre-implant anneal). The films have then been ion implanted and given another rapid thermal process step to activate the dopant and repair the implant damage. The pre-implant anneal has caused the as-deposited grain size to increase by approximately a factor of ten. After the activation anneal these films have shown a 10 to 100% lower sheet resistance than films which did not receive a pre-implant anneal. The increase in grain size by the pre-implant anneal reduced the grain boundary area and as a result reduced the amount of dopant trapped in the grain boundaries relative to that which was actually inside the grains.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsDevendra K. Sadana, Michael I. Current
Place of PublicationBellingham, WA, USA
PublisherSPIE
Pages119-126
Number of pages8
Volume623
ISBN (Print)0892526580
StatePublished - 1986

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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