Increasing medium-range order in amorphous silicon with low-energy ion bombardment

J. E. Gerbi; P. M. Voyles; M. M.J. Treacy; J. M. Gibson; J. R. Abelson

doi:10.1063/1.1578164

Increasing medium-range order in amorphous silicon with low-energy ion bombardment

J. E. Gerbi, P. M. Voyles, M. M.J. Treacy, J. M. Gibson, J. R. Abelson

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41 Scopus citations

Abstract

The observation of medium-range order (MRO) in amorphous silicon using the low-energy ion bombardment technique was discussed. MRO structure is assumed to be produced during the nonequilibrium deposition process, during which nuclei were formed and buried. The testing of this assumption by altering the deposition kinetics during the magnetron sputter deposition was also discussed.

Original language	English (US)
Pages (from-to)	3665-3667
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	21
DOIs	https://doi.org/10.1063/1.1578164
State	Published - May 26 2003
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1578164

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title = "Increasing medium-range order in amorphous silicon with low-energy ion bombardment",

abstract = "The observation of medium-range order (MRO) in amorphous silicon using the low-energy ion bombardment technique was discussed. MRO structure is assumed to be produced during the nonequilibrium deposition process, during which nuclei were formed and buried. The testing of this assumption by altering the deposition kinetics during the magnetron sputter deposition was also discussed.",

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AU - Gibson, J. M.

AU - Abelson, J. R.

PY - 2003/5/26

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AB - The observation of medium-range order (MRO) in amorphous silicon using the low-energy ion bombardment technique was discussed. MRO structure is assumed to be produced during the nonequilibrium deposition process, during which nuclei were formed and buried. The testing of this assumption by altering the deposition kinetics during the magnetron sputter deposition was also discussed.

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Increasing medium-range order in amorphous silicon with low-energy ion bombardment

Abstract

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