Increasing medium-range order in amorphous silicon with low-energy ion bombardment

J. E. Gerbi, P. M. Voyles, M. M.J. Treacy, J. M. Gibson, J. R. Abelson

Research output: Contribution to journalArticlepeer-review

36 Scopus citations

Abstract

The observation of medium-range order (MRO) in amorphous silicon using the low-energy ion bombardment technique was discussed. MRO structure is assumed to be produced during the nonequilibrium deposition process, during which nuclei were formed and buried. The testing of this assumption by altering the deposition kinetics during the magnetron sputter deposition was also discussed.

Original languageEnglish (US)
Pages (from-to)3665-3667
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number21
DOIs
StatePublished - May 26 2003
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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