@inproceedings{8684aa068b134a7bb3a2c73f910db523,
title = "Increased radiation hardness in ultra-thin GaAs single-junction solar cells",
abstract = "The absorber-thickness dependent, relative efficiency losses for solar cells with a 300 nm, 1000 nm and 2000 nm thick absorber were found to be 20.5%, 26.8% and 28.6%, respectively, after exposure to 1 MeV electron radiation. Thinner solar cells exhibited smaller efficiency losses than thicker devices; a trend that correlates well with the theoretical prediction using a semi-analytical model.",
keywords = "GaAs, Radiation Hardness, Solar Cell, Space Applications, Thin-Film",
author = "Jacob Becker and Kuo, {Ying Shen} and Yong-Hang Zhang",
year = "2014",
month = oct,
day = "15",
doi = "10.1109/PVSC.2014.6925281",
language = "English (US)",
series = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1839--1841",
booktitle = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
note = "40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",
}