Abstract

The absorber-thickness dependent, relative efficiency losses for solar cells with a 300 nm, 1000 nm and 2000 nm thick absorber were found to be 20.5%, 26.8% and 28.6%, respectively, after exposure to 1 MeV electron radiation. Thinner solar cells exhibited smaller efficiency losses than thicker devices; a trend that correlates well with the theoretical prediction using a semi-analytical model.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1839-1841
Number of pages3
ISBN (Electronic)9781479943982
DOIs
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Publication series

Name2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period6/8/146/13/14

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Keywords

  • GaAs
  • Radiation Hardness
  • Solar Cell
  • Space Applications
  • Thin-Film

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Becker, J., Kuo, Y. S., & Zhang, Y-H. (2014). Increased radiation hardness in ultra-thin GaAs single-junction solar cells. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 1839-1841). [6925281] (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925281