Abstract
The present paper provides evidence that Fe can be incorporated into NiSi 2 precipitates by solid-state diffusion. Furthermore, analysis of Si crystals contaminated with Ni and Fe at 1100°C and post annealed at 600°C and 800°C for 20 - 240 min revealed a strong indication that this incorporation is limited by bulk diffusion rather than incorporation kinetics.
Original language | English (US) |
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Title of host publication | Energy Procedia |
Pages | 27-34 |
Number of pages | 8 |
Volume | 3 |
DOIs | |
State | Published - 2011 |
Externally published | Yes |
Event | E-MRS Fall Meeting 2010, Symposium C 'Materials Devices and Economics Issues for Tomorrow's Photovoltaics' - Warsaw, Poland Duration: Sep 13 2010 → Sep 17 2010 |
Other
Other | E-MRS Fall Meeting 2010, Symposium C 'Materials Devices and Economics Issues for Tomorrow's Photovoltaics' |
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Country/Territory | Poland |
City | Warsaw |
Period | 9/13/10 → 9/17/10 |
Keywords
- Precipitates
- Silicides
- Silicon
- Solid state diffusion
- Time dependence
- Transmission electron microscopy
ASJC Scopus subject areas
- General Energy