Abstract

A method for incorporating 2D quantum mechanical effects into a full-band Cellular Monte Carlo simulator is described and applied to the simulation of Quantum Well Field Effect Transistors (QWFETs). Incorporating all relevant scattering mechanisms, good agreement is obtained between simulation and experiment in the case of a device with an InGaAs channel. The effect of scaling the QW width is also investigated.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE Conference on Nanotechnology
Pages67-70
Number of pages4
DOIs
StatePublished - 2013
Event2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 - Beijing, China
Duration: Aug 5 2013Aug 8 2013

Other

Other2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
CountryChina
CityBeijing
Period8/5/138/8/13

Fingerprint

Field effect transistors
Semiconductor quantum wells
field effect transistors
Simulators
quantum wells
Scattering
simulators
simulation
Experiments
scaling
scattering
Monte Carlo simulation

Keywords

  • III-V devices
  • Monte Carlo methods
  • QWFETs

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Marino, F. A., Tierney, B., Akis, R., Saraniti, M., & Goodnick, S. (2013). Incorporating 2D quantum effects into full band Monte Carlo simulations of QWFETs. In Proceedings of the IEEE Conference on Nanotechnology (pp. 67-70). [6721009] https://doi.org/10.1109/NANO.2013.6721009

Incorporating 2D quantum effects into full band Monte Carlo simulations of QWFETs. / Marino, F. A.; Tierney, B.; Akis, R.; Saraniti, Marco; Goodnick, Stephen.

Proceedings of the IEEE Conference on Nanotechnology. 2013. p. 67-70 6721009.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Marino, FA, Tierney, B, Akis, R, Saraniti, M & Goodnick, S 2013, Incorporating 2D quantum effects into full band Monte Carlo simulations of QWFETs. in Proceedings of the IEEE Conference on Nanotechnology., 6721009, pp. 67-70, 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013, Beijing, China, 8/5/13. https://doi.org/10.1109/NANO.2013.6721009
Marino FA, Tierney B, Akis R, Saraniti M, Goodnick S. Incorporating 2D quantum effects into full band Monte Carlo simulations of QWFETs. In Proceedings of the IEEE Conference on Nanotechnology. 2013. p. 67-70. 6721009 https://doi.org/10.1109/NANO.2013.6721009
Marino, F. A. ; Tierney, B. ; Akis, R. ; Saraniti, Marco ; Goodnick, Stephen. / Incorporating 2D quantum effects into full band Monte Carlo simulations of QWFETs. Proceedings of the IEEE Conference on Nanotechnology. 2013. pp. 67-70
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