Abstract
A method for incorporating 2D quantum mechanical effects into a full-band Cellular Monte Carlo simulator is described and applied to the simulation of Quantum Well Field Effect Transistors (QWFETs). Incorporating all relevant scattering mechanisms, good agreement is obtained between simulation and experiment in the case of a device with an InGaAs channel. The effect of scaling the QW width is also investigated.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings of the IEEE Conference on Nanotechnology |
| Pages | 67-70 |
| Number of pages | 4 |
| DOIs | |
| State | Published - 2013 |
| Event | 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 - Beijing, China Duration: Aug 5 2013 → Aug 8 2013 |
Other
| Other | 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 |
|---|---|
| Country | China |
| City | Beijing |
| Period | 8/5/13 → 8/8/13 |
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Keywords
- III-V devices
- Monte Carlo methods
- QWFETs
ASJC Scopus subject areas
- Bioengineering
- Electrical and Electronic Engineering
- Materials Chemistry
- Condensed Matter Physics
Cite this
Incorporating 2D quantum effects into full band Monte Carlo simulations of QWFETs. / Marino, F. A.; Tierney, B.; Akis, R.; Saraniti, Marco; Goodnick, Stephen.
Proceedings of the IEEE Conference on Nanotechnology. 2013. p. 67-70 6721009.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Incorporating 2D quantum effects into full band Monte Carlo simulations of QWFETs
AU - Marino, F. A.
AU - Tierney, B.
AU - Akis, R.
AU - Saraniti, Marco
AU - Goodnick, Stephen
PY - 2013
Y1 - 2013
N2 - A method for incorporating 2D quantum mechanical effects into a full-band Cellular Monte Carlo simulator is described and applied to the simulation of Quantum Well Field Effect Transistors (QWFETs). Incorporating all relevant scattering mechanisms, good agreement is obtained between simulation and experiment in the case of a device with an InGaAs channel. The effect of scaling the QW width is also investigated.
AB - A method for incorporating 2D quantum mechanical effects into a full-band Cellular Monte Carlo simulator is described and applied to the simulation of Quantum Well Field Effect Transistors (QWFETs). Incorporating all relevant scattering mechanisms, good agreement is obtained between simulation and experiment in the case of a device with an InGaAs channel. The effect of scaling the QW width is also investigated.
KW - III-V devices
KW - Monte Carlo methods
KW - QWFETs
UR - http://www.scopus.com/inward/record.url?scp=84894163672&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84894163672&partnerID=8YFLogxK
U2 - 10.1109/NANO.2013.6721009
DO - 10.1109/NANO.2013.6721009
M3 - Conference contribution
AN - SCOPUS:84894163672
SN - 9781479906758
SP - 67
EP - 70
BT - Proceedings of the IEEE Conference on Nanotechnology
ER -