Abstract

A method for incorporating 2D quantum mechanical effects into a full-band Cellular Monte Carlo simulator is described and applied to the simulation of Quantum Well Field Effect Transistors (QWFETs). Incorporating all relevant scattering mechanisms, good agreement is obtained between simulation and experiment in the case of a device with an InGaAs channel. The effect of scaling the QW width is also investigated.

Original languageEnglish (US)
Title of host publication2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
Pages67-70
Number of pages4
DOIs
StatePublished - Dec 1 2013
Event2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 - Beijing, China
Duration: Aug 5 2013Aug 8 2013

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Other

Other2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
CountryChina
CityBeijing
Period8/5/138/8/13

Keywords

  • III-V devices
  • Monte Carlo methods
  • QWFETs

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

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  • Cite this

    Marino, F. A., Tierney, B., Akis, R., Saraniti, M., & Goodnick, S. (2013). Incorporating 2D quantum effects into full band Monte Carlo simulations of QWFETs. In 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 (pp. 67-70). [6721009] (Proceedings of the IEEE Conference on Nanotechnology). https://doi.org/10.1109/NANO.2013.6721009