Inclusion of dielectric films for surface passivation of buried contact solar cells

Bernhard Vogl; Alexander M. Slade; Christiana B. Honsberg; Jeffrey E. Cotter; Stuart R. Wenham

doi:10.1109/PVSC.2000.915829

Inclusion of dielectric films for surface passivation of buried contact solar cells

Bernhard Vogl, Alexander M. Slade, Christiana B. Honsberg, Jeffrey E. Cotter, Stuart R. Wenham

Research output: Chapter in Book/Report/Conference proceeding › Chapter

1 Scopus citations

Abstract

Silicon nitride (SiN) has superior reflection properties compared to silicon dioxide (SiO₂). The use of deposited SiN over a thin oxide, grown during the emitter diffusion, allows the reflection benefits of SiN to be retained while still achieving low surface recombination velocities. This paper shows that for both conventional buried contact and simplified buried contact solar cells, the electrical performance of devices using a SiN/SiO₂ stack is identical to those using a thick SiO₂ layer, but the reflection properties are greatly improved. Furthermore, the electrical and reflection properties of LPCVD and PECVD deposited silicon nitride are the same, so the choice of one deposition technique over another depends on how silicon nitride is used in the solar cell process.

Original language	English (US)
Title of host publication	Conference Record of the IEEE Photovoltaic Specialists Conference
Pages	327-330
Number of pages	4
ISBN (Electronic)	0780357728
DOIs	https://doi.org/10.1109/PVSC.2000.915829
State	Published - Jan 1 2000
Externally published	Yes

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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10.1109/PVSC.2000.915829

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title = "Inclusion of dielectric films for surface passivation of buried contact solar cells",

abstract = "Silicon nitride (SiN) has superior reflection properties compared to silicon dioxide (SiO2). The use of deposited SiN over a thin oxide, grown during the emitter diffusion, allows the reflection benefits of SiN to be retained while still achieving low surface recombination velocities. This paper shows that for both conventional buried contact and simplified buried contact solar cells, the electrical performance of devices using a SiN/SiO2 stack is identical to those using a thick SiO2 layer, but the reflection properties are greatly improved. Furthermore, the electrical and reflection properties of LPCVD and PECVD deposited silicon nitride are the same, so the choice of one deposition technique over another depends on how silicon nitride is used in the solar cell process.",

author = "Bernhard Vogl and Slade, {Alexander M.} and Honsberg, {Christiana B.} and Cotter, {Jeffrey E.} and Wenham, {Stuart R.}",

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T1 - Inclusion of dielectric films for surface passivation of buried contact solar cells

AU - Vogl, Bernhard

AU - Slade, Alexander M.

AU - Honsberg, Christiana B.

AU - Cotter, Jeffrey E.

AU - Wenham, Stuart R.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - Silicon nitride (SiN) has superior reflection properties compared to silicon dioxide (SiO2). The use of deposited SiN over a thin oxide, grown during the emitter diffusion, allows the reflection benefits of SiN to be retained while still achieving low surface recombination velocities. This paper shows that for both conventional buried contact and simplified buried contact solar cells, the electrical performance of devices using a SiN/SiO2 stack is identical to those using a thick SiO2 layer, but the reflection properties are greatly improved. Furthermore, the electrical and reflection properties of LPCVD and PECVD deposited silicon nitride are the same, so the choice of one deposition technique over another depends on how silicon nitride is used in the solar cell process.

AB - Silicon nitride (SiN) has superior reflection properties compared to silicon dioxide (SiO2). The use of deposited SiN over a thin oxide, grown during the emitter diffusion, allows the reflection benefits of SiN to be retained while still achieving low surface recombination velocities. This paper shows that for both conventional buried contact and simplified buried contact solar cells, the electrical performance of devices using a SiN/SiO2 stack is identical to those using a thick SiO2 layer, but the reflection properties are greatly improved. Furthermore, the electrical and reflection properties of LPCVD and PECVD deposited silicon nitride are the same, so the choice of one deposition technique over another depends on how silicon nitride is used in the solar cell process.

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ER -

Inclusion of dielectric films for surface passivation of buried contact solar cells

Abstract

ASJC Scopus subject areas

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