Inclusion of dielectric films for surface passivation of buried contact solar cells

Bernhard Vogl, Alexander M. Slade, Christiana B. Honsberg, Jeffrey E. Cotter, Stuart R. Wenham

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Scopus citations

Abstract

Silicon nitride (SiN) has superior reflection properties compared to silicon dioxide (SiO2). The use of deposited SiN over a thin oxide, grown during the emitter diffusion, allows the reflection benefits of SiN to be retained while still achieving low surface recombination velocities. This paper shows that for both conventional buried contact and simplified buried contact solar cells, the electrical performance of devices using a SiN/SiO2 stack is identical to those using a thick SiO2 layer, but the reflection properties are greatly improved. Furthermore, the electrical and reflection properties of LPCVD and PECVD deposited silicon nitride are the same, so the choice of one deposition technique over another depends on how silicon nitride is used in the solar cell process.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages327-330
Number of pages4
ISBN (Electronic)0780357728
DOIs
StatePublished - Jan 1 2000
Externally publishedYes

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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    Vogl, B., Slade, A. M., Honsberg, C. B., Cotter, J. E., & Wenham, S. R. (2000). Inclusion of dielectric films for surface passivation of buried contact solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 327-330). [915829] https://doi.org/10.1109/PVSC.2000.915829