Inclusion of dielectric films for surface passivation of buried contact solar cells

Bernhard Vogl, Alexander M. Slade, Christiana Honsberg, Jeffrey E. Cotter, Stuart R. Wenham

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Silicon nitride (SiN) has superior reflection properties compared to silicon dioxide (SiO2). The use of deposited SiN over a thin oxide, grown during the emitter diffusion, allows the reflection benefits of SiN to be retained while still achieving low surface recombination velocities. This paper shows that for both conventional buried contact and simplified buried contact solar cells, the electrical performance of devices using a SiN/SiO2 stack is identical to those using a thick SiO2 layer, but the reflection properties are greatly improved. Furthermore, the electrical and reflection properties of LPCVD and PECVD deposited silicon nitride are the same, so the choice of one deposition technique over another depends on how silicon nitride is used in the solar cell process.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages327-330
Number of pages4
Volume2000-January
ISBN (Print)0780357728
DOIs
StatePublished - 2000
Externally publishedYes
Event28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States
Duration: Sep 15 2000Sep 22 2000

Other

Other28th IEEE Photovoltaic Specialists Conference, PVSC 2000
CountryUnited States
CityAnchorage
Period9/15/009/22/00

Fingerprint

Dielectric films
Silicon nitride
Passivation
Solar cells
Plasma enhanced chemical vapor deposition
Silica
Oxides

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Vogl, B., Slade, A. M., Honsberg, C., Cotter, J. E., & Wenham, S. R. (2000). Inclusion of dielectric films for surface passivation of buried contact solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference (Vol. 2000-January, pp. 327-330). [915829] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2000.915829

Inclusion of dielectric films for surface passivation of buried contact solar cells. / Vogl, Bernhard; Slade, Alexander M.; Honsberg, Christiana; Cotter, Jeffrey E.; Wenham, Stuart R.

Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 2000-January Institute of Electrical and Electronics Engineers Inc., 2000. p. 327-330 915829.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Vogl, B, Slade, AM, Honsberg, C, Cotter, JE & Wenham, SR 2000, Inclusion of dielectric films for surface passivation of buried contact solar cells. in Conference Record of the IEEE Photovoltaic Specialists Conference. vol. 2000-January, 915829, Institute of Electrical and Electronics Engineers Inc., pp. 327-330, 28th IEEE Photovoltaic Specialists Conference, PVSC 2000, Anchorage, United States, 9/15/00. https://doi.org/10.1109/PVSC.2000.915829
Vogl B, Slade AM, Honsberg C, Cotter JE, Wenham SR. Inclusion of dielectric films for surface passivation of buried contact solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 2000-January. Institute of Electrical and Electronics Engineers Inc. 2000. p. 327-330. 915829 https://doi.org/10.1109/PVSC.2000.915829
Vogl, Bernhard ; Slade, Alexander M. ; Honsberg, Christiana ; Cotter, Jeffrey E. ; Wenham, Stuart R. / Inclusion of dielectric films for surface passivation of buried contact solar cells. Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 2000-January Institute of Electrical and Electronics Engineers Inc., 2000. pp. 327-330
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