@inproceedings{1609850d3b7443d7adb5f6025bb5e98d,
title = "InAs/InAsSb type-II superlattice infrared nBn photodetectors and their potential for operation at high temperatures",
abstract = "Ga-free InAs/InAsSb type-II superlattice (T2SL) nBn photodetectors with very low dark current are fabricated and characterized. The typical device without antireflection coating and surface passivation has a cut-off wavelength of 13.2 micrometers, quantum efficiency (QE) of 2.5% and a background limited operating temperature of 70 K. Our analysis shows that the anticipated highest operating temperature of a 10.6 micrometer cut-off Ga-free T2SL nBn device can be 108 K, with a potential to reach 135 K if 20% QE or lower noise is achieved.",
keywords = "Infrared photodetector, focal plane array, molecular beam epitaxy, type-II superlattice",
author = "Cellek, {Oray O.} and He, {Zhao Yu} and Lin, {Zhi Yuan} and Kim, {Ha Sul} and Shi Liu and Yong-Hang Zhang",
year = "2013",
month = apr,
day = "9",
doi = "10.1117/12.2007612",
language = "English (US)",
isbn = "9780819494009",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Quantum Sensing and Nanophotonic Devices X",
note = "Quantum Sensing and Nanophotonic Devices X ; Conference date: 03-02-2013 Through 07-02-2013",
}