InAs/InAsSb type-II superlattice infrared nBn photodetectors and their potential for operation at high temperatures

Oray O. Cellek, Zhao Yu He, Zhi Yuan Lin, Ha Sul Kim, Shi Liu, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Ga-free InAs/InAsSb type-II superlattice (T2SL) nBn photodetectors with very low dark current are fabricated and characterized. The typical device without antireflection coating and surface passivation has a cut-off wavelength of 13.2 micrometers, quantum efficiency (QE) of 2.5% and a background limited operating temperature of 70 K. Our analysis shows that the anticipated highest operating temperature of a 10.6 micrometer cut-off Ga-free T2SL nBn device can be 108 K, with a potential to reach 135 K if 20% QE or lower noise is achieved.

Original languageEnglish (US)
Title of host publicationQuantum Sensing and Nanophotonic Devices X
DOIs
StatePublished - Apr 9 2013
EventQuantum Sensing and Nanophotonic Devices X - San Francisco, CA, United States
Duration: Feb 3 2013Feb 7 2013

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8631
ISSN (Print)0277-786X

Other

OtherQuantum Sensing and Nanophotonic Devices X
CountryUnited States
CitySan Francisco, CA
Period2/3/132/7/13

Keywords

  • Infrared photodetector
  • focal plane array
  • molecular beam epitaxy
  • type-II superlattice

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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