InAs/InAsSb Type-II superlattice: A promising material for mid-wavelength and long-wavelength infrared applications

Oray O. Cellek; Hua Li; Xiao Meng Shen; Zhiyuan Lin; Elizabeth H. Steenbergen; Ding Ding; Shi Liu; Qiang Zhang; Ha Sul Kim; Jin Fan; Michael J. Dinezza; W. Hank G Dettlaff; Preston T. Webster; Zhaoyu He; Jing Jing Li; Shane Johnson; David Smith; Yong-Hang Zhang

doi:10.1117/12.925076

InAs/InAsSb Type-II superlattice: A promising material for mid-wavelength and long-wavelength infrared applications

Oray O. Cellek, Hua Li, Xiao Meng Shen, Zhiyuan Lin, Elizabeth H. Steenbergen, Ding Ding, Shi Liu, Qiang Zhang, Ha Sul Kim, Jin Fan, Michael J. Dinezza, W. Hank G Dettlaff, Preston T. Webster, Zhaoyu He, Jing Jing Li, Shane Johnson, David Smith, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

Optical and structural properties of InAs/InAsSb type-II superlattices (T2SL) and their feasibility for mid- and longwavelength infrared (MWIR and LWIR) photodetector applications are investigated. The InAs/InAsSb T2SL structures with a broad bandgap range covering 4 μm to 12 μm are grown by molecular beam epitaxy and characterized by highresolution x-ray diffraction and photoluminescence (PL) spectroscopy. All of the samples have excellent structural properties and strong PL signal intensities of the same order of magnitude, indicating that non-radiative recombination is not dominant and the material system is promising for high performance MWIR and LWIR detectors and multiband FPAs.

Original language	English (US)
Title of host publication	Infrared Technology and Applications XXXVIII
Publisher	SPIE
ISBN (Print)	9780819490315
DOIs	https://doi.org/10.1117/12.925076
State	Published - 2012
Event	38th Conference on Infrared Technology and Applications - Baltimore, MD, United States Duration: Apr 23 2012 → Apr 27 2012

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8353
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Other

Other	38th Conference on Infrared Technology and Applications
Country/Territory	United States
City	Baltimore, MD
Period	4/23/12 → 4/27/12

Keywords

Infrared photodetector
focal plane array
molecular beam epitaxy
photoluminescence
type-II superlattice

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.925076

Cite this

Cellek, O. O., Li, H., Shen, X. M., Lin, Z., Steenbergen, E. H., Ding, D., Liu, S., Zhang, Q., Kim, H. S., Fan, J., Dinezza, M. J., Dettlaff, W. H. G., Webster, P. T., He, Z., Li, J. J., Johnson, S., Smith, D., & Zhang, Y.-H. (2012). InAs/InAsSb Type-II superlattice: A promising material for mid-wavelength and long-wavelength infrared applications. In Infrared Technology and Applications XXXVIII Article 83533F (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8353). SPIE. https://doi.org/10.1117/12.925076

InAs/InAsSb Type-II superlattice: A promising material for mid-wavelength and long-wavelength infrared applications. / Cellek, Oray O.; Li, Hua; Shen, Xiao Meng et al.
Infrared Technology and Applications XXXVIII. SPIE, 2012. 83533F (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8353).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Cellek, OO, Li, H, Shen, XM, Lin, Z, Steenbergen, EH, Ding, D, Liu, S, Zhang, Q, Kim, HS, Fan, J, Dinezza, MJ, Dettlaff, WHG, Webster, PT, He, Z, Li, JJ, Johnson, S , Smith, D & Zhang, Y-H 2012, InAs/InAsSb Type-II superlattice: A promising material for mid-wavelength and long-wavelength infrared applications. in Infrared Technology and Applications XXXVIII., 83533F, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8353, SPIE, 38th Conference on Infrared Technology and Applications, Baltimore, MD, United States, 4/23/12. https://doi.org/10.1117/12.925076

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title = "InAs/InAsSb Type-II superlattice: A promising material for mid-wavelength and long-wavelength infrared applications",

abstract = "Optical and structural properties of InAs/InAsSb type-II superlattices (T2SL) and their feasibility for mid- and longwavelength infrared (MWIR and LWIR) photodetector applications are investigated. The InAs/InAsSb T2SL structures with a broad bandgap range covering 4 μm to 12 μm are grown by molecular beam epitaxy and characterized by highresolution x-ray diffraction and photoluminescence (PL) spectroscopy. All of the samples have excellent structural properties and strong PL signal intensities of the same order of magnitude, indicating that non-radiative recombination is not dominant and the material system is promising for high performance MWIR and LWIR detectors and multiband FPAs.",

keywords = "Infrared photodetector, focal plane array, molecular beam epitaxy, photoluminescence, type-II superlattice",

author = "Cellek, {Oray O.} and Hua Li and Shen, {Xiao Meng} and Zhiyuan Lin and Steenbergen, {Elizabeth H.} and Ding Ding and Shi Liu and Qiang Zhang and Kim, {Ha Sul} and Jin Fan and Dinezza, {Michael J.} and Dettlaff, {W. Hank G} and Webster, {Preston T.} and Zhaoyu He and Li, {Jing Jing} and Shane Johnson and David Smith and Yong-Hang Zhang",

year = "2012",

doi = "10.1117/12.925076",

language = "English (US)",

isbn = "9780819490315",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "38th Conference on Infrared Technology and Applications ; Conference date: 23-04-2012 Through 27-04-2012",

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T2 - 38th Conference on Infrared Technology and Applications

AU - Cellek, Oray O.

AU - Li, Hua

AU - Shen, Xiao Meng

AU - Lin, Zhiyuan

AU - Steenbergen, Elizabeth H.

AU - Ding, Ding

AU - Liu, Shi

AU - Zhang, Qiang

AU - Kim, Ha Sul

AU - Fan, Jin

AU - Dinezza, Michael J.

AU - Dettlaff, W. Hank G

AU - Webster, Preston T.

AU - He, Zhaoyu

AU - Li, Jing Jing

AU - Johnson, Shane

AU - Smith, David

AU - Zhang, Yong-Hang

PY - 2012

Y1 - 2012

N2 - Optical and structural properties of InAs/InAsSb type-II superlattices (T2SL) and their feasibility for mid- and longwavelength infrared (MWIR and LWIR) photodetector applications are investigated. The InAs/InAsSb T2SL structures with a broad bandgap range covering 4 μm to 12 μm are grown by molecular beam epitaxy and characterized by highresolution x-ray diffraction and photoluminescence (PL) spectroscopy. All of the samples have excellent structural properties and strong PL signal intensities of the same order of magnitude, indicating that non-radiative recombination is not dominant and the material system is promising for high performance MWIR and LWIR detectors and multiband FPAs.

AB - Optical and structural properties of InAs/InAsSb type-II superlattices (T2SL) and their feasibility for mid- and longwavelength infrared (MWIR and LWIR) photodetector applications are investigated. The InAs/InAsSb T2SL structures with a broad bandgap range covering 4 μm to 12 μm are grown by molecular beam epitaxy and characterized by highresolution x-ray diffraction and photoluminescence (PL) spectroscopy. All of the samples have excellent structural properties and strong PL signal intensities of the same order of magnitude, indicating that non-radiative recombination is not dominant and the material system is promising for high performance MWIR and LWIR detectors and multiband FPAs.

KW - Infrared photodetector

KW - focal plane array

KW - molecular beam epitaxy

KW - photoluminescence

KW - type-II superlattice

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DO - 10.1117/12.925076

M3 - Conference contribution

AN - SCOPUS:84901297324

SN - 9780819490315

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Infrared Technology and Applications XXXVIII

PB - SPIE

Y2 - 23 April 2012 through 27 April 2012

ER -

InAs/InAsSb Type-II superlattice: A promising material for mid-wavelength and long-wavelength infrared applications

Abstract

Publication series

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Keywords

ASJC Scopus subject areas

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