InAs quantum dot growth on AlxGa1-xAs by metalorganic vapor phase epitaxy for intermediate band solar cells

R. Jakomin, R. M S Kawabata, R. T. Mourão, D. N. Micha, M. P. Pires, H. Xie, A. M. Fischer, Fernando Ponce, P. L. Souza

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12 Scopus citations

Abstract

InAs quantum dot multilayers have been grown using AlxGa1-xAs spacers with dimensions and compositions near the theoretical values for optimized efficiencies in intermediate band photovoltaic cells. Using an aluminium composition of x = 0.3 and InAs dot vertical dimensions of 5 nm, transitions to an intermediate band with energy close to the ideal theoretical value have been obtained. Optimum size uniformity and density have been achieved by capping the quantum dots with GaAs following the indium-flush method. This approach has also resulted in minimization of crystalline defects in the epilayer structure.

Original languageEnglish (US)
Article number093511
JournalJournal of Applied Physics
Volume116
Issue number9
DOIs
StatePublished - Sep 7 2014

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Jakomin, R., Kawabata, R. M. S., Mourão, R. T., Micha, D. N., Pires, M. P., Xie, H., Fischer, A. M., Ponce, F., & Souza, P. L. (2014). InAs quantum dot growth on AlxGa1-xAs by metalorganic vapor phase epitaxy for intermediate band solar cells. Journal of Applied Physics, 116(9), [093511]. https://doi.org/10.1063/1.4894295