InAs quantum dot growth on AlxGa1-xAs by metalorganic vapor phase epitaxy for intermediate band solar cells

R. Jakomin, R. M S Kawabata, R. T. Mourão, D. N. Micha, M. P. Pires, H. Xie, A. M. Fischer, Fernando Ponce, P. L. Souza

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

InAs quantum dot multilayers have been grown using AlxGa1-xAs spacers with dimensions and compositions near the theoretical values for optimized efficiencies in intermediate band photovoltaic cells. Using an aluminium composition of x = 0.3 and InAs dot vertical dimensions of 5 nm, transitions to an intermediate band with energy close to the ideal theoretical value have been obtained. Optimum size uniformity and density have been achieved by capping the quantum dots with GaAs following the indium-flush method. This approach has also resulted in minimization of crystalline defects in the epilayer structure.

Original languageEnglish (US)
Article number093511
JournalJournal of Applied Physics
Volume116
Issue number9
DOIs
StatePublished - Sep 7 2014

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vapor phase epitaxy
solar cells
quantum dots
photovoltaic cells
spacers
indium
aluminum
optimization
defects
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Jakomin, R., Kawabata, R. M. S., Mourão, R. T., Micha, D. N., Pires, M. P., Xie, H., ... Souza, P. L. (2014). InAs quantum dot growth on AlxGa1-xAs by metalorganic vapor phase epitaxy for intermediate band solar cells. Journal of Applied Physics, 116(9), [093511]. https://doi.org/10.1063/1.4894295

InAs quantum dot growth on AlxGa1-xAs by metalorganic vapor phase epitaxy for intermediate band solar cells. / Jakomin, R.; Kawabata, R. M S; Mourão, R. T.; Micha, D. N.; Pires, M. P.; Xie, H.; Fischer, A. M.; Ponce, Fernando; Souza, P. L.

In: Journal of Applied Physics, Vol. 116, No. 9, 093511, 07.09.2014.

Research output: Contribution to journalArticle

Jakomin, R, Kawabata, RMS, Mourão, RT, Micha, DN, Pires, MP, Xie, H, Fischer, AM, Ponce, F & Souza, PL 2014, 'InAs quantum dot growth on AlxGa1-xAs by metalorganic vapor phase epitaxy for intermediate band solar cells', Journal of Applied Physics, vol. 116, no. 9, 093511. https://doi.org/10.1063/1.4894295
Jakomin, R. ; Kawabata, R. M S ; Mourão, R. T. ; Micha, D. N. ; Pires, M. P. ; Xie, H. ; Fischer, A. M. ; Ponce, Fernando ; Souza, P. L. / InAs quantum dot growth on AlxGa1-xAs by metalorganic vapor phase epitaxy for intermediate band solar cells. In: Journal of Applied Physics. 2014 ; Vol. 116, No. 9.
@article{b3f4bf962c27436ba3132d436a7d928d,
title = "InAs quantum dot growth on AlxGa1-xAs by metalorganic vapor phase epitaxy for intermediate band solar cells",
abstract = "InAs quantum dot multilayers have been grown using AlxGa1-xAs spacers with dimensions and compositions near the theoretical values for optimized efficiencies in intermediate band photovoltaic cells. Using an aluminium composition of x = 0.3 and InAs dot vertical dimensions of 5 nm, transitions to an intermediate band with energy close to the ideal theoretical value have been obtained. Optimum size uniformity and density have been achieved by capping the quantum dots with GaAs following the indium-flush method. This approach has also resulted in minimization of crystalline defects in the epilayer structure.",
author = "R. Jakomin and Kawabata, {R. M S} and Mour{\~a}o, {R. T.} and Micha, {D. N.} and Pires, {M. P.} and H. Xie and Fischer, {A. M.} and Fernando Ponce and Souza, {P. L.}",
year = "2014",
month = "9",
day = "7",
doi = "10.1063/1.4894295",
language = "English (US)",
volume = "116",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

TY - JOUR

T1 - InAs quantum dot growth on AlxGa1-xAs by metalorganic vapor phase epitaxy for intermediate band solar cells

AU - Jakomin, R.

AU - Kawabata, R. M S

AU - Mourão, R. T.

AU - Micha, D. N.

AU - Pires, M. P.

AU - Xie, H.

AU - Fischer, A. M.

AU - Ponce, Fernando

AU - Souza, P. L.

PY - 2014/9/7

Y1 - 2014/9/7

N2 - InAs quantum dot multilayers have been grown using AlxGa1-xAs spacers with dimensions and compositions near the theoretical values for optimized efficiencies in intermediate band photovoltaic cells. Using an aluminium composition of x = 0.3 and InAs dot vertical dimensions of 5 nm, transitions to an intermediate band with energy close to the ideal theoretical value have been obtained. Optimum size uniformity and density have been achieved by capping the quantum dots with GaAs following the indium-flush method. This approach has also resulted in minimization of crystalline defects in the epilayer structure.

AB - InAs quantum dot multilayers have been grown using AlxGa1-xAs spacers with dimensions and compositions near the theoretical values for optimized efficiencies in intermediate band photovoltaic cells. Using an aluminium composition of x = 0.3 and InAs dot vertical dimensions of 5 nm, transitions to an intermediate band with energy close to the ideal theoretical value have been obtained. Optimum size uniformity and density have been achieved by capping the quantum dots with GaAs following the indium-flush method. This approach has also resulted in minimization of crystalline defects in the epilayer structure.

UR - http://www.scopus.com/inward/record.url?scp=84924559630&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84924559630&partnerID=8YFLogxK

U2 - 10.1063/1.4894295

DO - 10.1063/1.4894295

M3 - Article

AN - SCOPUS:84924559630

VL - 116

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 9

M1 - 093511

ER -