InAs-InAsxSb1-x type-II superlattice midwave infrared lasers grown on InAs substrates

Yong-Hang Zhang, Richard H. Miles, David H. Chow

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

This paper reports a detailed study of InAs-InAsxSb1-x Type-II superlattice (SL) midwave infrared laser structures, in which the band-to-band radiative transitions are spatially indirect, from extended electron states in the conduction band to relatively localized heavy-hole states in the valence band. Due to the large valence band offset between InSb and InAs, the effective bandgap of InAs-InAsxSb1-x Type-II SL can cover a broad infrared wavelength range, from 3.0 μm to far infrared (> 10μm). Under CW optical pumping, stimulated light emission is observed from laser structures consisting of InAs-InAsxSb1-x Type-II SL active regions capped by AlAs0.16Sb0.84 cladding layers. The operating wavelengths are around 3.4 μm, which is in good agreement with theoretical modeling. The overlap between electron and hole wavefunctions along the growth direction is calculated to be 0.89. Equivalent CW threshold current densities are 3.3 A/cm2 and 56 A/cm2 at sample temperatures of 5 K and 95 K, respectively. The corresponding characteristic temperature (T0) is 32 K. These results demonstrate that the InAs-InAsxSb1-x Type-II SL is a very promising candidate material for midwave infrared semiconductor lasers.

Original languageEnglish (US)
Pages (from-to)749-756
Number of pages8
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume1
Issue number2
DOIs
StatePublished - Jun 1995
Externally publishedYes

Fingerprint

Infrared lasers
infrared lasers
Valence bands
Infrared radiation
Substrates
Optical pumping
Threshold current density
Wavelength
Stimulated emission
Light emission
Wave functions
Electron transitions
Conduction bands
valence
Electron energy levels
Semiconductor lasers
Energy gap
optical pumping
electron states
stimulated emission

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Cite this

InAs-InAsxSb1-x type-II superlattice midwave infrared lasers grown on InAs substrates. / Zhang, Yong-Hang; Miles, Richard H.; Chow, David H.

In: IEEE Journal on Selected Topics in Quantum Electronics, Vol. 1, No. 2, 06.1995, p. 749-756.

Research output: Contribution to journalArticle

@article{d192bbb935cd4b678dd80d78559084ff,
title = "InAs-InAsxSb1-x type-II superlattice midwave infrared lasers grown on InAs substrates",
abstract = "This paper reports a detailed study of InAs-InAsxSb1-x Type-II superlattice (SL) midwave infrared laser structures, in which the band-to-band radiative transitions are spatially indirect, from extended electron states in the conduction band to relatively localized heavy-hole states in the valence band. Due to the large valence band offset between InSb and InAs, the effective bandgap of InAs-InAsxSb1-x Type-II SL can cover a broad infrared wavelength range, from 3.0 μm to far infrared (> 10μm). Under CW optical pumping, stimulated light emission is observed from laser structures consisting of InAs-InAsxSb1-x Type-II SL active regions capped by AlAs0.16Sb0.84 cladding layers. The operating wavelengths are around 3.4 μm, which is in good agreement with theoretical modeling. The overlap between electron and hole wavefunctions along the growth direction is calculated to be 0.89. Equivalent CW threshold current densities are 3.3 A/cm2 and 56 A/cm2 at sample temperatures of 5 K and 95 K, respectively. The corresponding characteristic temperature (T0) is 32 K. These results demonstrate that the InAs-InAsxSb1-x Type-II SL is a very promising candidate material for midwave infrared semiconductor lasers.",
author = "Yong-Hang Zhang and Miles, {Richard H.} and Chow, {David H.}",
year = "1995",
month = "6",
doi = "10.1109/2944.401267",
language = "English (US)",
volume = "1",
pages = "749--756",
journal = "IEEE Journal of Selected Topics in Quantum Electronics",
issn = "1077-260X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",

}

TY - JOUR

T1 - InAs-InAsxSb1-x type-II superlattice midwave infrared lasers grown on InAs substrates

AU - Zhang, Yong-Hang

AU - Miles, Richard H.

AU - Chow, David H.

PY - 1995/6

Y1 - 1995/6

N2 - This paper reports a detailed study of InAs-InAsxSb1-x Type-II superlattice (SL) midwave infrared laser structures, in which the band-to-band radiative transitions are spatially indirect, from extended electron states in the conduction band to relatively localized heavy-hole states in the valence band. Due to the large valence band offset between InSb and InAs, the effective bandgap of InAs-InAsxSb1-x Type-II SL can cover a broad infrared wavelength range, from 3.0 μm to far infrared (> 10μm). Under CW optical pumping, stimulated light emission is observed from laser structures consisting of InAs-InAsxSb1-x Type-II SL active regions capped by AlAs0.16Sb0.84 cladding layers. The operating wavelengths are around 3.4 μm, which is in good agreement with theoretical modeling. The overlap between electron and hole wavefunctions along the growth direction is calculated to be 0.89. Equivalent CW threshold current densities are 3.3 A/cm2 and 56 A/cm2 at sample temperatures of 5 K and 95 K, respectively. The corresponding characteristic temperature (T0) is 32 K. These results demonstrate that the InAs-InAsxSb1-x Type-II SL is a very promising candidate material for midwave infrared semiconductor lasers.

AB - This paper reports a detailed study of InAs-InAsxSb1-x Type-II superlattice (SL) midwave infrared laser structures, in which the band-to-band radiative transitions are spatially indirect, from extended electron states in the conduction band to relatively localized heavy-hole states in the valence band. Due to the large valence band offset between InSb and InAs, the effective bandgap of InAs-InAsxSb1-x Type-II SL can cover a broad infrared wavelength range, from 3.0 μm to far infrared (> 10μm). Under CW optical pumping, stimulated light emission is observed from laser structures consisting of InAs-InAsxSb1-x Type-II SL active regions capped by AlAs0.16Sb0.84 cladding layers. The operating wavelengths are around 3.4 μm, which is in good agreement with theoretical modeling. The overlap between electron and hole wavefunctions along the growth direction is calculated to be 0.89. Equivalent CW threshold current densities are 3.3 A/cm2 and 56 A/cm2 at sample temperatures of 5 K and 95 K, respectively. The corresponding characteristic temperature (T0) is 32 K. These results demonstrate that the InAs-InAsxSb1-x Type-II SL is a very promising candidate material for midwave infrared semiconductor lasers.

UR - http://www.scopus.com/inward/record.url?scp=0029324802&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029324802&partnerID=8YFLogxK

U2 - 10.1109/2944.401267

DO - 10.1109/2944.401267

M3 - Article

VL - 1

SP - 749

EP - 756

JO - IEEE Journal of Selected Topics in Quantum Electronics

JF - IEEE Journal of Selected Topics in Quantum Electronics

SN - 1077-260X

IS - 2

ER -