Abstract
In-situ synchrotron x-ray scattering has been used to monitor and control the synthesis of LaGaO3 epitaxial thin films by 90 ° off-axis RF-magnetron sputtering. Films deposited from a single LaGaO3 source were compared with those prepared by alternating deposition from separate La2O3 and Ga2O3 sources. The conditions for growth of stoichiometric films were determined by real-time monitoring of secondary phase formation as well as from features in the diffuse scatter from island formation during synthesis. These results provide atomic-scale insight into the mechanisms taking place during reactive epitaxial growth and demonstrate how in-situ techniques can be utilized to achieve stoichiometric control in ultrathin films.
| Original language | English (US) |
|---|---|
| Article number | 081606 |
| Journal | Applied Physics Letters |
| Volume | 107 |
| Issue number | 8 |
| DOIs | |
| State | Published - Aug 24 2015 |
| Externally published | Yes |
Fingerprint
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
In-situ x-ray studies of compositional control during synthesis of LaGaO3 by radio frequency-magnetron sputtering. / Highland, Matthew J.; Fong, Dillon D.; Ju, Guangxu; Thompson, Carol; Baldo, Peter M.; Fuoss, Paul H.; Eastman, Jeffrey A.
In: Applied Physics Letters, Vol. 107, No. 8, 081606, 24.08.2015.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - In-situ x-ray studies of compositional control during synthesis of LaGaO3 by radio frequency-magnetron sputtering
AU - Highland, Matthew J.
AU - Fong, Dillon D.
AU - Ju, Guangxu
AU - Thompson, Carol
AU - Baldo, Peter M.
AU - Fuoss, Paul H.
AU - Eastman, Jeffrey A.
PY - 2015/8/24
Y1 - 2015/8/24
N2 - In-situ synchrotron x-ray scattering has been used to monitor and control the synthesis of LaGaO3 epitaxial thin films by 90 ° off-axis RF-magnetron sputtering. Films deposited from a single LaGaO3 source were compared with those prepared by alternating deposition from separate La2O3 and Ga2O3 sources. The conditions for growth of stoichiometric films were determined by real-time monitoring of secondary phase formation as well as from features in the diffuse scatter from island formation during synthesis. These results provide atomic-scale insight into the mechanisms taking place during reactive epitaxial growth and demonstrate how in-situ techniques can be utilized to achieve stoichiometric control in ultrathin films.
AB - In-situ synchrotron x-ray scattering has been used to monitor and control the synthesis of LaGaO3 epitaxial thin films by 90 ° off-axis RF-magnetron sputtering. Films deposited from a single LaGaO3 source were compared with those prepared by alternating deposition from separate La2O3 and Ga2O3 sources. The conditions for growth of stoichiometric films were determined by real-time monitoring of secondary phase formation as well as from features in the diffuse scatter from island formation during synthesis. These results provide atomic-scale insight into the mechanisms taking place during reactive epitaxial growth and demonstrate how in-situ techniques can be utilized to achieve stoichiometric control in ultrathin films.
UR - http://www.scopus.com/inward/record.url?scp=84940540906&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84940540906&partnerID=8YFLogxK
U2 - 10.1063/1.4929753
DO - 10.1063/1.4929753
M3 - Article
AN - SCOPUS:84940540906
VL - 107
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 8
M1 - 081606
ER -