Abstract
In-situ synchrotron x-ray scattering has been used to monitor and control the synthesis of LaGaO3 epitaxial thin films by 90 ° off-axis RF-magnetron sputtering. Films deposited from a single LaGaO3 source were compared with those prepared by alternating deposition from separate La2O3 and Ga2O3 sources. The conditions for growth of stoichiometric films were determined by real-time monitoring of secondary phase formation as well as from features in the diffuse scatter from island formation during synthesis. These results provide atomic-scale insight into the mechanisms taking place during reactive epitaxial growth and demonstrate how in-situ techniques can be utilized to achieve stoichiometric control in ultrathin films.
Original language | English (US) |
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Article number | 081606 |
Journal | Applied Physics Letters |
Volume | 107 |
Issue number | 8 |
DOIs | |
State | Published - Aug 24 2015 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)