In-situ x-ray studies of compositional control during synthesis of LaGaO3 by radio frequency-magnetron sputtering

Matthew J. Highland; Dillon D. Fong; Guangxu Ju; Carol Thompson; Peter M. Baldo; Paul H. Fuoss; Jeffrey A. Eastman

doi:10.1063/1.4929753

In-situ x-ray studies of compositional control during synthesis of LaGaO₃ by radio frequency-magnetron sputtering

Matthew J. Highland, Dillon D. Fong, Guangxu Ju, Carol Thompson, Peter M. Baldo, Paul H. Fuoss, Jeffrey A. Eastman

Research output: Contribution to journal › Article

2 Scopus citations

Abstract

In-situ synchrotron x-ray scattering has been used to monitor and control the synthesis of LaGaO₃ epitaxial thin films by 90 ° off-axis RF-magnetron sputtering. Films deposited from a single LaGaO₃ source were compared with those prepared by alternating deposition from separate La₂O₃ and Ga₂O₃ sources. The conditions for growth of stoichiometric films were determined by real-time monitoring of secondary phase formation as well as from features in the diffuse scatter from island formation during synthesis. These results provide atomic-scale insight into the mechanisms taking place during reactive epitaxial growth and demonstrate how in-situ techniques can be utilized to achieve stoichiometric control in ultrathin films.

Original language	English (US)
Article number	081606
Journal	Applied Physics Letters
Volume	107
Issue number	8
DOIs	https://doi.org/10.1063/1.4929753
State	Published - Aug 24 2015
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Highland, M. J., Fong, D. D., Ju, G., Thompson, C., Baldo, P. M., Fuoss, P. H., & Eastman, J. A. (2015). In-situ x-ray studies of compositional control during synthesis of LaGaO₃ by radio frequency-magnetron sputtering. Applied Physics Letters, 107(8), [081606]. https://doi.org/10.1063/1.4929753

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abstract = "In-situ synchrotron x-ray scattering has been used to monitor and control the synthesis of LaGaO3 epitaxial thin films by 90 ° off-axis RF-magnetron sputtering. Films deposited from a single LaGaO3 source were compared with those prepared by alternating deposition from separate La2O3 and Ga2O3 sources. The conditions for growth of stoichiometric films were determined by real-time monitoring of secondary phase formation as well as from features in the diffuse scatter from island formation during synthesis. These results provide atomic-scale insight into the mechanisms taking place during reactive epitaxial growth and demonstrate how in-situ techniques can be utilized to achieve stoichiometric control in ultrathin films.",

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AU - Fuoss, Paul H.

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