In situ X-ray reflectivity of indium supplied on GaN templates by metal organic vapor phase epitaxy

Guangxu Ju; Shingo Fuchi; Masao Tabuchi; Yoshikazu Takeda

doi:10.1063/1.4823809

In situ X-ray reflectivity of indium supplied on GaN templates by metal organic vapor phase epitaxy

Guangxu Ju, Shingo Fuchi, Masao Tabuchi, Yoshikazu Takeda

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The indium supplied on c-plane GaN templates using Metal organic vapor phase epitaxy was studied by in situ X-ray reflectivity (XRR) at 800 °C. The presence of liquid indium layers on the GaN (0001) surface was demonstrated using data-fitting of XRR measurements, ex situ atomic force microscope, auger electron spectroscopy, and cross-sectional scanning electron microscope. These measurements demonstrated that a liquid indium layer coexisted with indium droplets on top of the GaN (0001) surface at 800 °C. The liquid indium film thicknesses increased with increasing TMIn supply time and did not change during cooling from 800 °C to room temperature.

Original language	English (US)
Article number	124906
Journal	Journal of Applied Physics
Volume	114
Issue number	12
DOIs	https://doi.org/10.1063/1.4823809
State	Published - Sep 28 2013
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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title = "In situ X-ray reflectivity of indium supplied on GaN templates by metal organic vapor phase epitaxy",

abstract = "The indium supplied on c-plane GaN templates using Metal organic vapor phase epitaxy was studied by in situ X-ray reflectivity (XRR) at 800 °C. The presence of liquid indium layers on the GaN (0001) surface was demonstrated using data-fitting of XRR measurements, ex situ atomic force microscope, auger electron spectroscopy, and cross-sectional scanning electron microscope. These measurements demonstrated that a liquid indium layer coexisted with indium droplets on top of the GaN (0001) surface at 800 °C. The liquid indium film thicknesses increased with increasing TMIn supply time and did not change during cooling from 800 °C to room temperature.",

author = "Guangxu Ju and Shingo Fuchi and Masao Tabuchi and Yoshikazu Takeda",

note = "Funding Information: This work was supported in part by the Grant-in Aid for Scientific Research (S) #18106001 from the Japan Society for the Promotion of Science.",

year = "2013",

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doi = "10.1063/1.4823809",

language = "English (US)",

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TY - JOUR

T1 - In situ X-ray reflectivity of indium supplied on GaN templates by metal organic vapor phase epitaxy

AU - Ju, Guangxu

AU - Fuchi, Shingo

AU - Tabuchi, Masao

AU - Takeda, Yoshikazu

N1 - Funding Information: This work was supported in part by the Grant-in Aid for Scientific Research (S) #18106001 from the Japan Society for the Promotion of Science.

PY - 2013/9/28

Y1 - 2013/9/28

N2 - The indium supplied on c-plane GaN templates using Metal organic vapor phase epitaxy was studied by in situ X-ray reflectivity (XRR) at 800 °C. The presence of liquid indium layers on the GaN (0001) surface was demonstrated using data-fitting of XRR measurements, ex situ atomic force microscope, auger electron spectroscopy, and cross-sectional scanning electron microscope. These measurements demonstrated that a liquid indium layer coexisted with indium droplets on top of the GaN (0001) surface at 800 °C. The liquid indium film thicknesses increased with increasing TMIn supply time and did not change during cooling from 800 °C to room temperature.

AB - The indium supplied on c-plane GaN templates using Metal organic vapor phase epitaxy was studied by in situ X-ray reflectivity (XRR) at 800 °C. The presence of liquid indium layers on the GaN (0001) surface was demonstrated using data-fitting of XRR measurements, ex situ atomic force microscope, auger electron spectroscopy, and cross-sectional scanning electron microscope. These measurements demonstrated that a liquid indium layer coexisted with indium droplets on top of the GaN (0001) surface at 800 °C. The liquid indium film thicknesses increased with increasing TMIn supply time and did not change during cooling from 800 °C to room temperature.

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JF - Journal of Applied Physics

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In situ X-ray reflectivity of indium supplied on GaN templates by metal organic vapor phase epitaxy

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