In situ X-ray reflectivity of indium supplied on GaN templates by metal organic vapor phase epitaxy

Guangxu Ju, Shingo Fuchi, Masao Tabuchi, Yoshikazu Takeda

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The indium supplied on c-plane GaN templates using Metal organic vapor phase epitaxy was studied by in situ X-ray reflectivity (XRR) at 800 °C. The presence of liquid indium layers on the GaN (0001) surface was demonstrated using data-fitting of XRR measurements, ex situ atomic force microscope, auger electron spectroscopy, and cross-sectional scanning electron microscope. These measurements demonstrated that a liquid indium layer coexisted with indium droplets on top of the GaN (0001) surface at 800 °C. The liquid indium film thicknesses increased with increasing TMIn supply time and did not change during cooling from 800 °C to room temperature.

Original languageEnglish (US)
Article number124906
JournalJournal of Applied Physics
Volume114
Issue number12
DOIs
StatePublished - Oct 17 2013
Externally publishedYes

Fingerprint

vapor phase epitaxy
indium
templates
reflectance
metals
x rays
liquids
Auger spectroscopy
electron spectroscopy
film thickness
electron microscopes
microscopes
cooling
scanning
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

In situ X-ray reflectivity of indium supplied on GaN templates by metal organic vapor phase epitaxy. / Ju, Guangxu; Fuchi, Shingo; Tabuchi, Masao; Takeda, Yoshikazu.

In: Journal of Applied Physics, Vol. 114, No. 12, 124906, 17.10.2013.

Research output: Contribution to journalArticle

Ju, Guangxu ; Fuchi, Shingo ; Tabuchi, Masao ; Takeda, Yoshikazu. / In situ X-ray reflectivity of indium supplied on GaN templates by metal organic vapor phase epitaxy. In: Journal of Applied Physics. 2013 ; Vol. 114, No. 12.
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