In situ X-ray measurements of MOVPE growth of inxGa 1-xN single quantum wells

Guangxu Ju, Shingo Fuchi, Masao Tabuchi, Yoshikazu Takeda

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

GaN/InxGa1-xN/GaN single quantum wells (SQWs) have been grown on c-plane GaN/sapphire substrates using MOVPE system. PL (photoluminescence) and AFM (atomic force microscope) measurements demonstrate good quality of after-growth thermal-annealed SQWs. In situ XRD (X-ray diffraction), XRR (X-ray reflectivity), and X-ray CTR (crystal truncation rod) scattering measurements were successfully conducted on the SQWs under the NH3+N2 ambient at 1103 K. The analysis results of the XRR and the X-ray CTR spectra at 1103 K and at 300 K on the same sample matched well. It demonstrated that In0.09Ga0.91N SQW structure with several ML (monolayer) InGaN thicknesses was successfully investigated using the XRR and CTR scattering measurements at 1103 K.

Original languageEnglish (US)
Pages (from-to)36-41
Number of pages6
JournalJournal of Crystal Growth
Volume370
DOIs
StatePublished - May 1 2013
Externally publishedYes

Fingerprint

Metallorganic vapor phase epitaxy
Semiconductor quantum wells
quantum wells
X rays
x rays
rods
Crystals
reflectance
Scattering
approximation
Aluminum Oxide
crystals
Sapphire
Monolayers
Photoluminescence
scattering
Microscopes
sapphire
X ray diffraction
microscopes

Keywords

  • A1. In situ
  • A1. X-ray crystal truncation rod
  • A1. X-ray reflectivity
  • A3. Metalorganic vapor phase epitaxy
  • B2. Semiconducting III-N materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

In situ X-ray measurements of MOVPE growth of inxGa 1-xN single quantum wells. / Ju, Guangxu; Fuchi, Shingo; Tabuchi, Masao; Takeda, Yoshikazu.

In: Journal of Crystal Growth, Vol. 370, 01.05.2013, p. 36-41.

Research output: Contribution to journalArticle

Ju, Guangxu ; Fuchi, Shingo ; Tabuchi, Masao ; Takeda, Yoshikazu. / In situ X-ray measurements of MOVPE growth of inxGa 1-xN single quantum wells. In: Journal of Crystal Growth. 2013 ; Vol. 370. pp. 36-41.
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AU - Fuchi, Shingo

AU - Tabuchi, Masao

AU - Takeda, Yoshikazu

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AB - GaN/InxGa1-xN/GaN single quantum wells (SQWs) have been grown on c-plane GaN/sapphire substrates using MOVPE system. PL (photoluminescence) and AFM (atomic force microscope) measurements demonstrate good quality of after-growth thermal-annealed SQWs. In situ XRD (X-ray diffraction), XRR (X-ray reflectivity), and X-ray CTR (crystal truncation rod) scattering measurements were successfully conducted on the SQWs under the NH3+N2 ambient at 1103 K. The analysis results of the XRR and the X-ray CTR spectra at 1103 K and at 300 K on the same sample matched well. It demonstrated that In0.09Ga0.91N SQW structure with several ML (monolayer) InGaN thicknesses was successfully investigated using the XRR and CTR scattering measurements at 1103 K.

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