In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy

Guangxu Ju, Yoshio Honda, Masao Tabuchi, Yoshikazu Takeda, Hiroshi Amano

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10 Scopus citations

Abstract

The effects of GaN quantum barriers with changing growth temperatures on the interfacial characteristics of GaN/InGaN single quantum well (SQW) grown on GaN templates by metalorganic vapour phase epitaxy were in situ investigated by X-ray crystal truncation rod (CTR) scattering and X-ray reflectivity measurements at growth temperature using a laboratory level X-ray diffractometer. Comparing the curve-fitting results of X-ray CTR scattering spectra obtained at growth temperature with that at room temperature, the InxGa1-xN with indium composition less than 0.11 was stabile of the indium distribution at the interface during the whole growth processes. By using several monolayers thickness GaN capping layer to protect the InGaN well layer within temperature-ramping process, the interfacial structure of the GaN/InGaN SQW was drastically improved on the basis of the curve-fitting results of X-ray CTR scattering spectra, and the narrow full width at half-maximum and strong luminous intensity were observed in room temperature photoluminescence spectra.

Original languageEnglish (US)
Article number094906
JournalJournal of Applied Physics
Volume115
Issue number9
DOIs
StatePublished - Mar 7 2014

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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