In situ temperature control of molecular beam epitaxy growth using band-edge thermometry

Shane Johnson, Chau Hong Kuo, Martin Boonzaayer, Wolfgang Braun, Ulrich Koelle, Yong-Hang Zhang, John Roth

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Band-edge thermometry is becoming an established noncontact method for determining substrate temperature during molecular beam epitaxy. However, with this technique thin-film interference and/or absorption in the growing epilayer can cause shape distortions of the spectrum that may be interpreted erroneously as real temperature shifts of the substrate. An algorithm is presented that uses the width of the spectrum to correct for apparent temperature errors caused by interference and absorption in the epilayer. This correction procedure is tested on substrate temperature data taken during the growth of a λ=930 nm resonant cavity, where the apparent substrate temperature oscillates ±5°C during the growth of the mirror stacks. These oscillations are reduced to ±3°C using the correction algorithm. A recently developed model for the substrate temperature dynamics in molecular beam epitaxy shows that roughly ±1°C of the remaining ±3°C temperature oscillations are real. Band-edge thermometry is also used to control the substrate temperature to within ±2°C during the growth of near-lattice-matched InGaAs on InP, whereas the same growth under constant thermocouple temperature would result in a 50°C rise in the actual substrate temperature.

Original languageEnglish (US)
Pages (from-to)1502-1506
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume16
Issue number3
StatePublished - May 1998

Fingerprint

temperature control
Temperature control
Molecular beam epitaxy
temperature measurement
molecular beam epitaxy
Substrates
Temperature
temperature
Epilayers
interference
oscillations
Cavity resonators
cavity resonators
thermocouples
Thermocouples
Mirrors
mirrors
Thin films
causes
shift

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Cite this

In situ temperature control of molecular beam epitaxy growth using band-edge thermometry. / Johnson, Shane; Kuo, Chau Hong; Boonzaayer, Martin; Braun, Wolfgang; Koelle, Ulrich; Zhang, Yong-Hang; Roth, John.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, No. 3, 05.1998, p. 1502-1506.

Research output: Contribution to journalArticle

@article{efa43cfdfd7c4441aca23a5669c08bb2,
title = "In situ temperature control of molecular beam epitaxy growth using band-edge thermometry",
abstract = "Band-edge thermometry is becoming an established noncontact method for determining substrate temperature during molecular beam epitaxy. However, with this technique thin-film interference and/or absorption in the growing epilayer can cause shape distortions of the spectrum that may be interpreted erroneously as real temperature shifts of the substrate. An algorithm is presented that uses the width of the spectrum to correct for apparent temperature errors caused by interference and absorption in the epilayer. This correction procedure is tested on substrate temperature data taken during the growth of a λ=930 nm resonant cavity, where the apparent substrate temperature oscillates ±5°C during the growth of the mirror stacks. These oscillations are reduced to ±3°C using the correction algorithm. A recently developed model for the substrate temperature dynamics in molecular beam epitaxy shows that roughly ±1°C of the remaining ±3°C temperature oscillations are real. Band-edge thermometry is also used to control the substrate temperature to within ±2°C during the growth of near-lattice-matched InGaAs on InP, whereas the same growth under constant thermocouple temperature would result in a 50°C rise in the actual substrate temperature.",
author = "Shane Johnson and Kuo, {Chau Hong} and Martin Boonzaayer and Wolfgang Braun and Ulrich Koelle and Yong-Hang Zhang and John Roth",
year = "1998",
month = "5",
language = "English (US)",
volume = "16",
pages = "1502--1506",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "3",

}

TY - JOUR

T1 - In situ temperature control of molecular beam epitaxy growth using band-edge thermometry

AU - Johnson, Shane

AU - Kuo, Chau Hong

AU - Boonzaayer, Martin

AU - Braun, Wolfgang

AU - Koelle, Ulrich

AU - Zhang, Yong-Hang

AU - Roth, John

PY - 1998/5

Y1 - 1998/5

N2 - Band-edge thermometry is becoming an established noncontact method for determining substrate temperature during molecular beam epitaxy. However, with this technique thin-film interference and/or absorption in the growing epilayer can cause shape distortions of the spectrum that may be interpreted erroneously as real temperature shifts of the substrate. An algorithm is presented that uses the width of the spectrum to correct for apparent temperature errors caused by interference and absorption in the epilayer. This correction procedure is tested on substrate temperature data taken during the growth of a λ=930 nm resonant cavity, where the apparent substrate temperature oscillates ±5°C during the growth of the mirror stacks. These oscillations are reduced to ±3°C using the correction algorithm. A recently developed model for the substrate temperature dynamics in molecular beam epitaxy shows that roughly ±1°C of the remaining ±3°C temperature oscillations are real. Band-edge thermometry is also used to control the substrate temperature to within ±2°C during the growth of near-lattice-matched InGaAs on InP, whereas the same growth under constant thermocouple temperature would result in a 50°C rise in the actual substrate temperature.

AB - Band-edge thermometry is becoming an established noncontact method for determining substrate temperature during molecular beam epitaxy. However, with this technique thin-film interference and/or absorption in the growing epilayer can cause shape distortions of the spectrum that may be interpreted erroneously as real temperature shifts of the substrate. An algorithm is presented that uses the width of the spectrum to correct for apparent temperature errors caused by interference and absorption in the epilayer. This correction procedure is tested on substrate temperature data taken during the growth of a λ=930 nm resonant cavity, where the apparent substrate temperature oscillates ±5°C during the growth of the mirror stacks. These oscillations are reduced to ±3°C using the correction algorithm. A recently developed model for the substrate temperature dynamics in molecular beam epitaxy shows that roughly ±1°C of the remaining ±3°C temperature oscillations are real. Band-edge thermometry is also used to control the substrate temperature to within ±2°C during the growth of near-lattice-matched InGaAs on InP, whereas the same growth under constant thermocouple temperature would result in a 50°C rise in the actual substrate temperature.

UR - http://www.scopus.com/inward/record.url?scp=0043057134&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0043057134&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0043057134

VL - 16

SP - 1502

EP - 1506

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 3

ER -