The authors report the use of in situ optical reflectometry to determine the incubation time for the onset of growth, mean growth rate, and average length of Si nanowires during chemical vapor deposition vapor-liquid-solid synthesis. Results for the constructive and destructive interferences of 635 nm linearly polarized laser light scattering from growing nanowire layers are compared to simulations. This real time optical reflectance approach is shown to quantitatively determine nanowire growth rates as well as reveal a pressure dependence for the time to nucleate nanowire growth.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - 2006|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)