In situ studies of semiconductor nanowire growth using optical reflectometry

T. Clement, S. Ingole, S. Ketharanathan, Jeffery Drucker, S. T. Picraux

Research output: Contribution to journalArticle

32 Scopus citations

Abstract

The authors report the use of in situ optical reflectometry to determine the incubation time for the onset of growth, mean growth rate, and average length of Si nanowires during chemical vapor deposition vapor-liquid-solid synthesis. Results for the constructive and destructive interferences of 635 nm linearly polarized laser light scattering from growing nanowire layers are compared to simulations. This real time optical reflectance approach is shown to quantitatively determine nanowire growth rates as well as reveal a pressure dependence for the time to nucleate nanowire growth.

Original languageEnglish (US)
Article number163125
JournalApplied Physics Letters
Volume89
Issue number16
DOIs
StatePublished - Oct 25 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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