In situ studies of semiconductor nanowire growth using optical reflectometry

T. Clement; S. Ingole; S. Ketharanathan; Jeffery Drucker; S. T. Picraux

doi:10.1063/1.2364121

In situ studies of semiconductor nanowire growth using optical reflectometry

T. Clement, S. Ingole, S. Ketharanathan, Jeffery Drucker, S. T. Picraux

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33 Scopus citations

Abstract

The authors report the use of in situ optical reflectometry to determine the incubation time for the onset of growth, mean growth rate, and average length of Si nanowires during chemical vapor deposition vapor-liquid-solid synthesis. Results for the constructive and destructive interferences of 635 nm linearly polarized laser light scattering from growing nanowire layers are compared to simulations. This real time optical reflectance approach is shown to quantitatively determine nanowire growth rates as well as reveal a pressure dependence for the time to nucleate nanowire growth.

Original language	English (US)
Article number	163125
Journal	Applied Physics Letters
Volume	89
Issue number	16
DOIs	https://doi.org/10.1063/1.2364121
State	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2364121

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title = "In situ studies of semiconductor nanowire growth using optical reflectometry",

abstract = "The authors report the use of in situ optical reflectometry to determine the incubation time for the onset of growth, mean growth rate, and average length of Si nanowires during chemical vapor deposition vapor-liquid-solid synthesis. Results for the constructive and destructive interferences of 635 nm linearly polarized laser light scattering from growing nanowire layers are compared to simulations. This real time optical reflectance approach is shown to quantitatively determine nanowire growth rates as well as reveal a pressure dependence for the time to nucleate nanowire growth.",

author = "T. Clement and S. Ingole and S. Ketharanathan and Jeffery Drucker and Picraux, {S. T.}",

note = "Funding Information: The authors gratefully acknowledge financial support by the National Science Foundation (DMR-0413523) and U.S. Department of Energy.",

year = "2006",

doi = "10.1063/1.2364121",

language = "English (US)",

volume = "89",

journal = "Applied Physics Letters",

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T1 - In situ studies of semiconductor nanowire growth using optical reflectometry

AU - Clement, T.

AU - Ingole, S.

AU - Ketharanathan, S.

AU - Drucker, Jeffery

AU - Picraux, S. T.

N1 - Funding Information: The authors gratefully acknowledge financial support by the National Science Foundation (DMR-0413523) and U.S. Department of Energy.

PY - 2006

Y1 - 2006

N2 - The authors report the use of in situ optical reflectometry to determine the incubation time for the onset of growth, mean growth rate, and average length of Si nanowires during chemical vapor deposition vapor-liquid-solid synthesis. Results for the constructive and destructive interferences of 635 nm linearly polarized laser light scattering from growing nanowire layers are compared to simulations. This real time optical reflectance approach is shown to quantitatively determine nanowire growth rates as well as reveal a pressure dependence for the time to nucleate nanowire growth.

AB - The authors report the use of in situ optical reflectometry to determine the incubation time for the onset of growth, mean growth rate, and average length of Si nanowires during chemical vapor deposition vapor-liquid-solid synthesis. Results for the constructive and destructive interferences of 635 nm linearly polarized laser light scattering from growing nanowire layers are compared to simulations. This real time optical reflectance approach is shown to quantitatively determine nanowire growth rates as well as reveal a pressure dependence for the time to nucleate nanowire growth.

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In situ studies of semiconductor nanowire growth using optical reflectometry

Abstract

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