In situ studies of semiconductor nanowire growth using optical reflectometry

T. Clement, S. Ingole, S. Ketharanathan, Jeffery Drucker, S. T. Picraux

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

The authors report the use of in situ optical reflectometry to determine the incubation time for the onset of growth, mean growth rate, and average length of Si nanowires during chemical vapor deposition vapor-liquid-solid synthesis. Results for the constructive and destructive interferences of 635 nm linearly polarized laser light scattering from growing nanowire layers are compared to simulations. This real time optical reflectance approach is shown to quantitatively determine nanowire growth rates as well as reveal a pressure dependence for the time to nucleate nanowire growth.

Original languageEnglish (US)
Article number163125
JournalApplied Physics Letters
Volume89
Issue number16
DOIs
StatePublished - 2006

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nanowires
pressure dependence
light scattering
vapor deposition
vapors
reflectance
interference
synthesis
liquids
lasers
simulation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

In situ studies of semiconductor nanowire growth using optical reflectometry. / Clement, T.; Ingole, S.; Ketharanathan, S.; Drucker, Jeffery; Picraux, S. T.

In: Applied Physics Letters, Vol. 89, No. 16, 163125, 2006.

Research output: Contribution to journalArticle

Clement, T. ; Ingole, S. ; Ketharanathan, S. ; Drucker, Jeffery ; Picraux, S. T. / In situ studies of semiconductor nanowire growth using optical reflectometry. In: Applied Physics Letters. 2006 ; Vol. 89, No. 16.
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