In situ resistance measurements of epitaxial cobalt silicide nanowires on Si(110)

Hiroyuki Okino, Iwao Matsuda, Rei Hobara, Yoshikazu Hosomura, Shuji Hasegawa, Peter Bennett

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We have performed in situ resistance measurements for individual epitaxial CoSi2 nanowires (NWs) (approximately 60 nm wide and 5 μm long) formed on a Si(110) surface. Two- and four-point probe measurements were done with a multitip scanning tunneling microscope at room temperature. The NWs were well isolated from the substrate by a Schottky barrier with zero-bias resistance of 107 Ω. The resistivity of the NWs was 30 μΩ cm, which is similar to that for high-quality epitaxial films. The NW resistance was essentially unchanged after exposure to air.

Original languageEnglish (US)
Article number233108
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number23
StatePublished - Jun 6 2005


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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