In situ resistance measurements of epitaxial cobalt silicide nanowires on Si(110)

Hiroyuki Okino, Iwao Matsuda, Rei Hobara, Yoshikazu Hosomura, Shuji Hasegawa, Peter Bennett

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Abstract

We have performed in situ resistance measurements for individual epitaxial CoSi2 nanowires (NWs) (approximately 60 nm wide and 5 μm long) formed on a Si(110) surface. Two- and four-point probe measurements were done with a multitip scanning tunneling microscope at room temperature. The NWs were well isolated from the substrate by a Schottky barrier with zero-bias resistance of 107 Ω. The resistivity of the NWs was 30 μΩ cm, which is similar to that for high-quality epitaxial films. The NW resistance was essentially unchanged after exposure to air.

Original languageEnglish (US)
Article number233108
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number23
DOIs
StatePublished - Jun 6 2005

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nanowires
cobalt
microscopes
electrical resistivity
scanning
probes
air
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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In situ resistance measurements of epitaxial cobalt silicide nanowires on Si(110). / Okino, Hiroyuki; Matsuda, Iwao; Hobara, Rei; Hosomura, Yoshikazu; Hasegawa, Shuji; Bennett, Peter.

In: Applied Physics Letters, Vol. 86, No. 23, 233108, 06.06.2005, p. 1-3.

Research output: Contribution to journalArticle

Okino, H, Matsuda, I, Hobara, R, Hosomura, Y, Hasegawa, S & Bennett, P 2005, 'In situ resistance measurements of epitaxial cobalt silicide nanowires on Si(110)', Applied Physics Letters, vol. 86, no. 23, 233108, pp. 1-3. https://doi.org/10.1063/1.1948519
Okino, Hiroyuki ; Matsuda, Iwao ; Hobara, Rei ; Hosomura, Yoshikazu ; Hasegawa, Shuji ; Bennett, Peter. / In situ resistance measurements of epitaxial cobalt silicide nanowires on Si(110). In: Applied Physics Letters. 2005 ; Vol. 86, No. 23. pp. 1-3.
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