In situ resistance measurements of epitaxial cobalt silicide nanowires on Si(110)

Hiroyuki Okino; Iwao Matsuda; Rei Hobara; Yoshikazu Hosomura; Shuji Hasegawa; Peter Bennett

doi:10.1063/1.1948519

In situ resistance measurements of epitaxial cobalt silicide nanowires on Si(110)

Hiroyuki Okino, Iwao Matsuda, Rei Hobara, Yoshikazu Hosomura, Shuji Hasegawa, Peter Bennett

Physics

Research output: Contribution to journal › Article › peer-review

63 Scopus citations

Abstract

We have performed in situ resistance measurements for individual epitaxial CoSi2 nanowires (NWs) (approximately 60 nm wide and 5 μm long) formed on a Si(110) surface. Two- and four-point probe measurements were done with a multitip scanning tunneling microscope at room temperature. The NWs were well isolated from the substrate by a Schottky barrier with zero-bias resistance of 107 Ω. The resistivity of the NWs was 30 μΩ cm, which is similar to that for high-quality epitaxial films. The NW resistance was essentially unchanged after exposure to air.

Original language	English (US)
Article number	233108
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	23
DOIs	https://doi.org/10.1063/1.1948519
State	Published - Jun 6 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{1768f47e2812429b9fdd72e2de719312,

title = "In situ resistance measurements of epitaxial cobalt silicide nanowires on Si(110)",

abstract = "We have performed in situ resistance measurements for individual epitaxial CoSi2 nanowires (NWs) (approximately 60 nm wide and 5 μm long) formed on a Si(110) surface. Two- and four-point probe measurements were done with a multitip scanning tunneling microscope at room temperature. The NWs were well isolated from the substrate by a Schottky barrier with zero-bias resistance of 107 Ω. The resistivity of the NWs was 30 μΩ cm, which is similar to that for high-quality epitaxial films. The NW resistance was essentially unchanged after exposure to air.",

author = "Hiroyuki Okino and Iwao Matsuda and Rei Hobara and Yoshikazu Hosomura and Shuji Hasegawa and Peter Bennett",

note = "Funding Information: The authors wish to thank Zhian He and David J. Smith for valuable discussions about the structure of NWs. This work has been supported by Grants-In-Aid from Japanese Society for the Promotion of Science.",

year = "2005",

month = jun,

day = "6",

doi = "10.1063/1.1948519",

language = "English (US)",

volume = "86",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "23",

}

TY - JOUR

T1 - In situ resistance measurements of epitaxial cobalt silicide nanowires on Si(110)

AU - Okino, Hiroyuki

AU - Matsuda, Iwao

AU - Hobara, Rei

AU - Hosomura, Yoshikazu

AU - Hasegawa, Shuji

AU - Bennett, Peter

N1 - Funding Information: The authors wish to thank Zhian He and David J. Smith for valuable discussions about the structure of NWs. This work has been supported by Grants-In-Aid from Japanese Society for the Promotion of Science.

PY - 2005/6/6

Y1 - 2005/6/6

N2 - We have performed in situ resistance measurements for individual epitaxial CoSi2 nanowires (NWs) (approximately 60 nm wide and 5 μm long) formed on a Si(110) surface. Two- and four-point probe measurements were done with a multitip scanning tunneling microscope at room temperature. The NWs were well isolated from the substrate by a Schottky barrier with zero-bias resistance of 107 Ω. The resistivity of the NWs was 30 μΩ cm, which is similar to that for high-quality epitaxial films. The NW resistance was essentially unchanged after exposure to air.

AB - We have performed in situ resistance measurements for individual epitaxial CoSi2 nanowires (NWs) (approximately 60 nm wide and 5 μm long) formed on a Si(110) surface. Two- and four-point probe measurements were done with a multitip scanning tunneling microscope at room temperature. The NWs were well isolated from the substrate by a Schottky barrier with zero-bias resistance of 107 Ω. The resistivity of the NWs was 30 μΩ cm, which is similar to that for high-quality epitaxial films. The NW resistance was essentially unchanged after exposure to air.

UR - http://www.scopus.com/inward/record.url?scp=21244484682&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21244484682&partnerID=8YFLogxK

U2 - 10.1063/1.1948519

DO - 10.1063/1.1948519

M3 - Article

AN - SCOPUS:21244484682

SN - 0003-6951

VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 233108

ER -

In situ resistance measurements of epitaxial cobalt silicide nanowires on Si(110)

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