In situ remote H-plasma cleaning of patterned Si-SiO2 surfaces

R. J. Carter, T. P. Schneider, J. S. Montgomery, Robert Nemanich

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

A RF H-plasma exposure was used to clean the surface of Si-SiO2 patterned wafers. The areal coverage of SiO2 to bare Si was 4 to 1, and the patterns were long strips, small squares, and large open regions. The plasma-surface etching was monitored by residual gas analysis (RGA). The RGA spectra indicated etching of the Si surface at temperatures below 400 °C and no detectable by-products due to interactions with the SiO2 regions for temperatures <450 °C. The patterned surfaces were characterized with low energy electron diffraction (LEED) (from the bare Si regions) and atomic force microscopy (AFM). The LEED patterns indicate 1×1 and 2×1 surface symmetries at 300 and 450 °C, respectively. The sharpness of the LEED patterns as well as the 2×1 reconstruction indicated that the H-plasma cleaned the bare Si regions. In addition, AFM measurements indicated that the Si and SiO2 surface rms roughnesses do not vary significantly due to the H-plasma exposure. It can be concluded from the RGA and AFM data that the remote H-plasma process at 450 °C cleaned the surface and did not significantly react with either the Si or SiO2 regions.

Original languageEnglish (US)
Pages (from-to)3136-3140
Number of pages5
JournalJournal of the Electrochemical Society
Volume141
Issue number11
StatePublished - Nov 1994
Externally publishedYes

Fingerprint

cleaning
Cleaning
Plasmas
Gas fuel analysis
gas analysis
residual gas
Low energy electron diffraction
Atomic force microscopy
electron diffraction
atomic force microscopy
Diffraction patterns
Etching
diffraction patterns
etching
sharpness
Byproducts
energy
strip
surface roughness
Surface roughness

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Carter, R. J., Schneider, T. P., Montgomery, J. S., & Nemanich, R. (1994). In situ remote H-plasma cleaning of patterned Si-SiO2 surfaces. Journal of the Electrochemical Society, 141(11), 3136-3140.

In situ remote H-plasma cleaning of patterned Si-SiO2 surfaces. / Carter, R. J.; Schneider, T. P.; Montgomery, J. S.; Nemanich, Robert.

In: Journal of the Electrochemical Society, Vol. 141, No. 11, 11.1994, p. 3136-3140.

Research output: Contribution to journalArticle

Carter, RJ, Schneider, TP, Montgomery, JS & Nemanich, R 1994, 'In situ remote H-plasma cleaning of patterned Si-SiO2 surfaces', Journal of the Electrochemical Society, vol. 141, no. 11, pp. 3136-3140.
Carter, R. J. ; Schneider, T. P. ; Montgomery, J. S. ; Nemanich, Robert. / In situ remote H-plasma cleaning of patterned Si-SiO2 surfaces. In: Journal of the Electrochemical Society. 1994 ; Vol. 141, No. 11. pp. 3136-3140.
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