In situ remote H-plasma cleaning of patterned Si-SiO2 surfaces

R. J. Carter, T. P. Schneider, J. S. Montgomery, Robert Nemanich

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Abstract

A RF H-plasma exposure was used to clean the surface of Si-SiO2 patterned wafers. The areal coverage of SiO2 to bare Si was 4 to 1, and the patterns were long strips, small squares, and large open regions. The plasma-surface etching was monitored by residual gas analysis (RGA). The RGA spectra indicated etching of the Si surface at temperatures below 400 °C and no detectable by-products due to interactions with the SiO2 regions for temperatures <450 °C. The patterned surfaces were characterized with low energy electron diffraction (LEED) (from the bare Si regions) and atomic force microscopy (AFM). The LEED patterns indicate 1×1 and 2×1 surface symmetries at 300 and 450 °C, respectively. The sharpness of the LEED patterns as well as the 2×1 reconstruction indicated that the H-plasma cleaned the bare Si regions. In addition, AFM measurements indicated that the Si and SiO2 surface rms roughnesses do not vary significantly due to the H-plasma exposure. It can be concluded from the RGA and AFM data that the remote H-plasma process at 450 °C cleaned the surface and did not significantly react with either the Si or SiO2 regions.

Original languageEnglish (US)
Pages (from-to)3136-3140
Number of pages5
JournalJournal of the Electrochemical Society
Volume141
Issue number11
Publication statusPublished - Nov 1994
Externally publishedYes

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ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Carter, R. J., Schneider, T. P., Montgomery, J. S., & Nemanich, R. (1994). In situ remote H-plasma cleaning of patterned Si-SiO2 surfaces. Journal of the Electrochemical Society, 141(11), 3136-3140.