In situ oxidation processes for In III-V compound semiconductors studied by high-resolution electron microscopy

Amanda K. Petford-Long, David Smith

Research output: Contribution to journalArticle

15 Scopus citations

Abstract

Oxidation of the amorphous and crystalline material at, and near, the surfaces of InP, InAs and InSb crystals takes place in situ during observation with a 400 kV atomic-resolution electron microscope. The phases present in the surface layers can be identified by comparison of lattice spacings with those of the bulk material, using the optical Mractogram technique. In general, the most prevalent material formed is found to be In2O3 and, for InAs, there is often an epitaxial relationship between the oxide and the substrate. However, in some regions of the original amorphous layer, small crystah (< 50 Å) of the corresponding In compound semiconductors are recrystallized, and small amounts of metallic As are observed for Ids, and metailic In for InP. It is concluded that electron-beam-stimulated desorption of the anion species takes place, followed by oxidation of the residual In metal.

Original languageEnglish (US)
Pages (from-to)837-850
Number of pages14
JournalPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Volume54
Issue number6
DOIs
StatePublished - Dec 1986

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics
  • Physics and Astronomy (miscellaneous)
  • Metals and Alloys

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