IN SITU OXIDATION PROCESSES FOR In III-V COMPOUND SEMICONDUCTORS STUDIED BY HIGH-RESOLUTION ELECTRON MICROSCOPY.

Amanda K. Petford-Long, David Smith

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Oxidation of the amorphous and crystalline material at, and near, the surfaces of InP, InAs and InSb crystals takes place in situ during observation with a 400 kV atomic-resolution electron microscope. The phases present in the surface layers can be identified by comparison of lattice spacings with those of the bulk materials, using the optical diffractogram technique. In general, the most prevalent material formed is found to be In//2O//3 and, for InAs, there is often an epitaxial relationship between the oxide and the substrate. However, in some regions of the original amorphous layer, small crystals ( less than 50 Angstrom) of the corresponding In compound semiconductors are recrystallized, and small amounts of metallic As are observed for InAs, and metallic In for InP. It is concluded that electron-beam-stimulated desorption of the anion species takes place, followed by oxidation of the residual

Original languageEnglish (US)
Pages (from-to)837-850
Number of pages14
JournalPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Volume54
Issue number6
StatePublished - Dec 1986

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High resolution electron microscopy
electron microscopy
Oxidation
Crystals
oxidation
high resolution
amorphous materials
crystals
Electron beams
Desorption
surface layers
Electron microscopes
Negative ions
electron microscopes
desorption
spacing
electron beams
Semiconductor materials
Crystalline materials
anions

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics

Cite this

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abstract = "Oxidation of the amorphous and crystalline material at, and near, the surfaces of InP, InAs and InSb crystals takes place in situ during observation with a 400 kV atomic-resolution electron microscope. The phases present in the surface layers can be identified by comparison of lattice spacings with those of the bulk materials, using the optical diffractogram technique. In general, the most prevalent material formed is found to be In//2O//3 and, for InAs, there is often an epitaxial relationship between the oxide and the substrate. However, in some regions of the original amorphous layer, small crystals ( less than 50 Angstrom) of the corresponding In compound semiconductors are recrystallized, and small amounts of metallic As are observed for InAs, and metallic In for InP. It is concluded that electron-beam-stimulated desorption of the anion species takes place, followed by oxidation of the residual",
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T1 - IN SITU OXIDATION PROCESSES FOR In III-V COMPOUND SEMICONDUCTORS STUDIED BY HIGH-RESOLUTION ELECTRON MICROSCOPY.

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AU - Smith, David

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N2 - Oxidation of the amorphous and crystalline material at, and near, the surfaces of InP, InAs and InSb crystals takes place in situ during observation with a 400 kV atomic-resolution electron microscope. The phases present in the surface layers can be identified by comparison of lattice spacings with those of the bulk materials, using the optical diffractogram technique. In general, the most prevalent material formed is found to be In//2O//3 and, for InAs, there is often an epitaxial relationship between the oxide and the substrate. However, in some regions of the original amorphous layer, small crystals ( less than 50 Angstrom) of the corresponding In compound semiconductors are recrystallized, and small amounts of metallic As are observed for InAs, and metallic In for InP. It is concluded that electron-beam-stimulated desorption of the anion species takes place, followed by oxidation of the residual

AB - Oxidation of the amorphous and crystalline material at, and near, the surfaces of InP, InAs and InSb crystals takes place in situ during observation with a 400 kV atomic-resolution electron microscope. The phases present in the surface layers can be identified by comparison of lattice spacings with those of the bulk materials, using the optical diffractogram technique. In general, the most prevalent material formed is found to be In//2O//3 and, for InAs, there is often an epitaxial relationship between the oxide and the substrate. However, in some regions of the original amorphous layer, small crystals ( less than 50 Angstrom) of the corresponding In compound semiconductors are recrystallized, and small amounts of metallic As are observed for InAs, and metallic In for InP. It is concluded that electron-beam-stimulated desorption of the anion species takes place, followed by oxidation of the residual

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