IN SITU ION IMPLANTATION FOR QUANTITATIVE SIMS ANALYSIS.

Richard T. Lareau, Peter Williams

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

The primary ion column of a secondary ion mass spectrometer (Cameca IMS 3f) has been used as an ion implanter to prepare calibrated standards, in situ, for quantitative SIMS analysis, with an accuracy better than 10%. The technique has been used to determine oxygen concentrations in contaminated TiSi//2 films by implanting a reference level of 18//O into a portion of the film.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
PublisherMaterials Research Soc
Pages273-279
Number of pages7
ISBN (Print)0931837138, 9780931837135
DOIs
StatePublished - Jan 1 1985

Publication series

NameMaterials Research Society Symposia Proceedings
Volume48
ISSN (Print)0272-9172

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Lareau, R. T., & Williams, P. (1985). IN SITU ION IMPLANTATION FOR QUANTITATIVE SIMS ANALYSIS. In Materials Research Society Symposia Proceedings (pp. 273-279). (Materials Research Society Symposia Proceedings; Vol. 48). Materials Research Soc. https://doi.org/10.1557/proc-48-273