In-situ ellipsometric characterization of nucleation conditions of HgCdTe grown by MBE

G. Badano, J. Zhao, S. Sivananthan, T. Aoki, David Smith

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We constructed an optical model to characterize with a spectroscopic ellipsometer (SE) the nucleation of Hg1-xCdxTe (MCT) grown by molecular beam epitaxy on CdZn0.035Te (CZT) substrates. Substrates of 2×2cm2 area were loaded into a RIBER 32P chamber and heat cleaned to remove oxide according to a standard procedure. SE spectra were recorded during the cleaning procedure and the entire growth process.

Original languageEnglish (US)
Title of host publicationMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages251-252
Number of pages2
ISBN (Electronic)0780375815, 9780780375819
DOIs
StatePublished - 2002
Event12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States
Duration: Sep 15 2002Sep 20 2002

Other

Other12th International Conference on Molecular Beam Epitaxy, MBE 2002
CountryUnited States
CitySan Francisco
Period9/15/029/20/02

Fingerprint

Molecular beam epitaxy
Nucleation
Substrates
Oxides
Cleaning
Hot Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Badano, G., Zhao, J., Sivananthan, S., Aoki, T., & Smith, D. (2002). In-situ ellipsometric characterization of nucleation conditions of HgCdTe grown by MBE. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy (pp. 251-252). [1037854] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MBE.2002.1037854

In-situ ellipsometric characterization of nucleation conditions of HgCdTe grown by MBE. / Badano, G.; Zhao, J.; Sivananthan, S.; Aoki, T.; Smith, David.

MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc., 2002. p. 251-252 1037854.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Badano, G, Zhao, J, Sivananthan, S, Aoki, T & Smith, D 2002, In-situ ellipsometric characterization of nucleation conditions of HgCdTe grown by MBE. in MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy., 1037854, Institute of Electrical and Electronics Engineers Inc., pp. 251-252, 12th International Conference on Molecular Beam Epitaxy, MBE 2002, San Francisco, United States, 9/15/02. https://doi.org/10.1109/MBE.2002.1037854
Badano G, Zhao J, Sivananthan S, Aoki T, Smith D. In-situ ellipsometric characterization of nucleation conditions of HgCdTe grown by MBE. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc. 2002. p. 251-252. 1037854 https://doi.org/10.1109/MBE.2002.1037854
Badano, G. ; Zhao, J. ; Sivananthan, S. ; Aoki, T. ; Smith, David. / In-situ ellipsometric characterization of nucleation conditions of HgCdTe grown by MBE. MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 251-252
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