In-situ ellipsometric characterization of nucleation conditions of HgCdTe grown by MBE

G. Badano; J. Zhao; S. Sivananthan; T. Aoki; David Smith

doi:10.1109/MBE.2002.1037854

In-situ ellipsometric characterization of nucleation conditions of HgCdTe grown by MBE

G. Badano, J. Zhao, S. Sivananthan, T. Aoki, David Smith

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We constructed an optical model to characterize with a spectroscopic ellipsometer (SE) the nucleation of Hg_1-xCd_xTe (MCT) grown by molecular beam epitaxy on CdZn_0.035Te (CZT) substrates. Substrates of 2×2cm² area were loaded into a RIBER 32P chamber and heat cleaned to remove oxide according to a standard procedure. SE spectra were recorded during the cleaning procedure and the entire growth process.

Original language	English (US)
Title of host publication	MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	251-252
Number of pages	2
ISBN (Electronic)	0780375815, 9780780375819
DOIs	https://doi.org/10.1109/MBE.2002.1037854
State	Published - 2002
Event	12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States Duration: Sep 15 2002 → Sep 20 2002

Publication series

Name	MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Other

Other	12th International Conference on Molecular Beam Epitaxy, MBE 2002
Country/Territory	United States
City	San Francisco
Period	9/15/02 → 9/20/02

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Materials Chemistry

Access to Document

10.1109/MBE.2002.1037854

Cite this

Badano, G., Zhao, J., Sivananthan, S., Aoki, T., & Smith, D. (2002). In-situ ellipsometric characterization of nucleation conditions of HgCdTe grown by MBE. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy (pp. 251-252). Article 1037854 (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MBE.2002.1037854

In-situ ellipsometric characterization of nucleation conditions of HgCdTe grown by MBE. / Badano, G.; Zhao, J.; Sivananthan, S. et al.
MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc., 2002. p. 251-252 1037854 (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Badano, G, Zhao, J, Sivananthan, S, Aoki, T & Smith, D 2002, In-situ ellipsometric characterization of nucleation conditions of HgCdTe grown by MBE. in MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy., 1037854, MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy, Institute of Electrical and Electronics Engineers Inc., pp. 251-252, 12th International Conference on Molecular Beam Epitaxy, MBE 2002, San Francisco, United States, 9/15/02. https://doi.org/10.1109/MBE.2002.1037854

Badano G, Zhao J, Sivananthan S, Aoki T, Smith D. In-situ ellipsometric characterization of nucleation conditions of HgCdTe grown by MBE. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc. 2002. p. 251-252. 1037854. (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy). doi: 10.1109/MBE.2002.1037854

@inproceedings{de739eaa8927498481ae930d82ec6225,

title = "In-situ ellipsometric characterization of nucleation conditions of HgCdTe grown by MBE",

abstract = "We constructed an optical model to characterize with a spectroscopic ellipsometer (SE) the nucleation of Hg1-xCdxTe (MCT) grown by molecular beam epitaxy on CdZn0.035Te (CZT) substrates. Substrates of 2×2cm2 area were loaded into a RIBER 32P chamber and heat cleaned to remove oxide according to a standard procedure. SE spectra were recorded during the cleaning procedure and the entire growth process.",

author = "G. Badano and J. Zhao and S. Sivananthan and T. Aoki and David Smith",

note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; 12th International Conference on Molecular Beam Epitaxy, MBE 2002 ; Conference date: 15-09-2002 Through 20-09-2002",

year = "2002",

doi = "10.1109/MBE.2002.1037854",

language = "English (US)",

series = "MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "251--252",

booktitle = "MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy",

}

TY - GEN

T1 - In-situ ellipsometric characterization of nucleation conditions of HgCdTe grown by MBE

AU - Badano, G.

AU - Zhao, J.

AU - Sivananthan, S.

AU - Aoki, T.

AU - Smith, David

PY - 2002

Y1 - 2002

N2 - We constructed an optical model to characterize with a spectroscopic ellipsometer (SE) the nucleation of Hg1-xCdxTe (MCT) grown by molecular beam epitaxy on CdZn0.035Te (CZT) substrates. Substrates of 2×2cm2 area were loaded into a RIBER 32P chamber and heat cleaned to remove oxide according to a standard procedure. SE spectra were recorded during the cleaning procedure and the entire growth process.

AB - We constructed an optical model to characterize with a spectroscopic ellipsometer (SE) the nucleation of Hg1-xCdxTe (MCT) grown by molecular beam epitaxy on CdZn0.035Te (CZT) substrates. Substrates of 2×2cm2 area were loaded into a RIBER 32P chamber and heat cleaned to remove oxide according to a standard procedure. SE spectra were recorded during the cleaning procedure and the entire growth process.

UR - http://www.scopus.com/inward/record.url?scp=84968649985&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84968649985&partnerID=8YFLogxK

U2 - 10.1109/MBE.2002.1037854

DO - 10.1109/MBE.2002.1037854

M3 - Conference contribution

AN - SCOPUS:84968649985

T3 - MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

SP - 251

EP - 252

BT - MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 12th International Conference on Molecular Beam Epitaxy, MBE 2002

Y2 - 15 September 2002 through 20 September 2002

ER -

In-situ ellipsometric characterization of nucleation conditions of HgCdTe grown by MBE

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this