In situ delay-slack monitor for high-performance processors using an all-digital self-calibrating 5ps resolution time-to-digital converter

David Fick, Nurrachman Liu, Zhiyoong Foo, Matthew Fojtik, Jae-sun Seo, Dennis Sylvester, David Blaauw

Research output: Chapter in Book/Report/Conference proceedingConference contribution

31 Scopus citations

Abstract

Advanced CMOS technologies have become highly susceptible to process, voltage, and temperature (PVT) variation. The standard approach for addressing this issue is to increase timing margin at the expense of power and performance. One approach to reclaim these losses relies on canary circuits [1] or sensors [2], which are simple to implement but cannot account for local variations. A more recent approach, called Razor, uses delay speculation coupled with error detection and correction to remove all margins but also imposes significant design complexity [3]. In this paper, we present a minimally-invasive in situdelay slack monitor that directly measures the timing margins on critical timing signals, allowing margins due to both global and local PVT variations to be removed.

Original languageEnglish (US)
Title of host publicationDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Pages188-189
Number of pages2
Volume53
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event2010 IEEE International Solid-State Circuits Conference, ISSCC 2010 - San Francisco, CA, United States
Duration: Feb 7 2010Feb 11 2010

Other

Other2010 IEEE International Solid-State Circuits Conference, ISSCC 2010
CountryUnited States
CitySan Francisco, CA
Period2/7/102/11/10

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Fick, D., Liu, N., Foo, Z., Fojtik, M., Seo, J., Sylvester, D., & Blaauw, D. (2010). In situ delay-slack monitor for high-performance processors using an all-digital self-calibrating 5ps resolution time-to-digital converter. In Digest of Technical Papers - IEEE International Solid-State Circuits Conference (Vol. 53, pp. 188-189). [5433996] https://doi.org/10.1109/ISSCC.2010.5433996